• ETRI Journal
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• v.46 no.5
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• pp.783-792
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• 2024

Lithium niobate on insulator (LNOI) is a promising material platform for applications in integrated quantum photonics. A low optical loss is crucial for preserving fragile quantum states. Therefore, in this study, we have fabricated LNOI rib waveguides with a low optical propagation loss of 0.16 dB/cm by optimizing the etching conditions for various parameters. The symmetry and smoothness of the waveguides on x-cut LNOI are improved by employing a shallow etching process. The proposed method is expected to facilitate the development of on-chip quantum photonic devices based on LNOI.

• Electronics and Telecommunications Trends
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• v.35 no.4
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• pp.21-33
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• 2020

Single photon detector technologies have emerged as powerful tools in optical quantum information applications such as quantum communication, quantum information, and integrated quantum photonics. Owing to significant attempts in the previous decade at improving photon-counting detectors, several single photon detectors with high efficiency and low noise have been realized within the optical wavelength regime. In this paper, we provide an overview of current studies on single photon detectors operating at wavelengths from the ultraviolet to the infrared. In addition, we discuss applications of single photon detector technologies in quantum communication and integrated quantum photonics.

• Current Optics and Photonics
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• v.7 no.6
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• pp.761-765
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• 2023

We analyzed the absorption spectra of acetone in the 3.37 ㎛ mid-infrared range using the off-axis integrated cavity output spectroscopy technique to develop a real-time, in-line breath analysis device. The linear relationship between acetone concentration and absorption increase was confirmed as 0.32%/ppm, indicating that the developed device allows for a quantitative analysis of acetone concentration in exhaled breath. To further confirm the feasibility of using our device for breath analysis, we measured the acetone concentration of human breath samples at the sub-ppm level.

• Progress in Superconductivity
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• v.8 no.2
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• pp.181-185
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• 2007

For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.223-239
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• 1990

This paper presents an overview on the present status and future trends of photonic physics and engineering as applicable to optical materials and devices that would enable optical information processing and optical commmication technologies of the future. Covered subjects include semiconductor quantum devices, organic materials, photorefractive physics, quantum effect, non-linear processing optical amplification, memory, integrated optics, and applications in all-optical communications and processing, including photonic switching.

• Current Optics and Photonics
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• v.8 no.1
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• pp.16-29
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• 2024

This paper presents a comprehensive review of metasurface technology, focusing on its significant role in extraordinary flat optic functionalities. Traditional optical components, though optimized, are bulky and less congruent with modern integrated electromagnetic and photonic systems. Metasurfaces, recognized as the 2D counterparts of bulk metamaterials, offer solutions with their planar, ultra-thin, and lightweight structures. Their meta-atoms are adept at introducing abrupt shifts in optical properties, paving the way for high-precision light manipulation. By introducing the key design principles of these meta-atoms, such as the magnetic dipole and Pancharatnam-Berry phase, various applications in wavefront shaping and beam forming with simple amplitude/phase manipulation and advanced applications including retroreflectors, Janus metasurfaces, multiplexing of optical wavefronts, data encryption, and metasurfaces for quantum applications are reviewed.

• Rapid Communication in Photoscience
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• v.4 no.2
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• pp.37-40
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• 2015

To examine the photosensitized biomolecules damaging activity, dimethoxyP(V)tetrakis(2-naphthyl)porphyrin (NP) and dimethoxyP(V)tetraphenylporphyrin (PP) were synthesized. The naphthyl moiety of NP hardly deactivated the photoexcited P(V)porphyrin ring in ethanol. In aqueous solution, the naphthyl moiety showed the quenching effect on the photoexcited porphyrin ring, possibly through electron transfer and self-quenching by a molecular association. Binding interaction between human serum albumin (HSA), a water soluble protein, and these porphyrins could be confirmed by the absorption spectral change. The apparent association constant of NP was larger than that of PP. It is explained by that more hydrophobic NP can easily bind into the hydrophobic pockets of HSA. The photoexcited PP effectively induced damage of the tryptophan residue of HSA, through electron transfer-mediated oxidation and singlet oxygen generation. NP also induced HSA damage during photo-irradiation and the contributions of the electron transfer and singlet oxygen mechanisms were speculated. The electron transfer-mediated mechanism to the photosensitized protein damage should be advantageous for photodynamic therapy in hypoxic condition. The quantum yield of the HSA photodamage by PP was significantly larger than that of NP. The quenching effect of the naphthyl moiety is considered to suppress the photosensitized protein damage. In conclusion, the naphthalene substitution to the P(V)porphyrins can enhance the binding interaction with hydrophobic biomacromolecules such as protein, however, this substitution may reduce the photodynamic effect of P(V)porphyrin ring in aqueous media.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.294-300
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• 1993

Monolithic NOR and INVERTER active optical logic devices inte- grated with surface-emitting microlasers, heterojunction photo- transistors(HPT) in parallel and resistors in series are characterized. The differential quantum efficiency of the typical AlGaAs superlattice microlaser integrated in the active optical logic devices is 15%. Current gain of the HPT is 57, when emitter-collector voltage and input optical power are 4 V and $50{\mu}W$, respectively. $57{\mu}W$ of output power from the active optical logic device decreases to zero when $47{\mu}W$ of input optical power is incident on the HPT part of the active logic device.

• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.366-375
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• 2005

A fabrication process of periodic electric field assisted poling of Ti-diffused channel waveguides in LiNbO3 (Ti:PPLN) has been developed and improved using a periodic 180o phase inversion along the z-axis. The zig for poling inversion and the Labview program of charge control have been devised. Pulse high voltage and duty cycle were adjusted based on the estimated charge required for poling inversion. Monitoring the change of leakage current under applied voltage less than the coercive voltage also minimized a breakdown.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.