• 한국전자파학회논문지
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• 제19권11호
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• pp.1287-1293
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• 2008

4중 대역의 안테나 스위치 모듈을 개발하였다. 단말기의 front-end 단에서 LTCC 형태의 저역 통과 필터, 다이오드 및 수동 부품들로 구현되는 스위치 부분을 대신하여 수동 집적 회로와 트랜지스터 스위치로 집적화한 것이다. 필터의 수동 소자 및 정합 회로를 통합 구성하여 크기 면에서도 소형화가 가능하고, 가격 경쟁력에서도 우위를 점할 수 있다. 제안하는 안테나 스위치 모듈의 크기는 $5{\times}5\;mm$이고, 두께는 0.8 mm로 제작되었다. 각 대역의 삽입 손실은 평균적으로 1.0 dB이며, 반사 손실은 GSM/EGSM 대역에서 15.1 dB, DCS/PCS 대역에서 19 dB이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.975-976
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• 2006

The passive type RFID (Radio Frequency Identification) System using Surface Acoustic Wave (SAW) tag at 900 MHz in the range of more than 1 m was fabricated. To improve interrogation range of the system propose a method to increase isolation between transmitter and receiver. This method using a direct conversion architecture achieves a leakage rejection of 10 dB increased compared with conventional system. Measured interrogation range is more than 1 m.

• 한국광학회지
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• 제18권1호
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• pp.50-55
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• 2007

본 연구에서는 광통신 시스템에 있어서 필수적인 기능으로 전망되고 있는 전광 논리소자를 구현하기 위한 집적된 광소자를 제작, 측정 하였다. 유기금속화학증착법(MOCVD)을 이용한 선택영역 성장기술을 이용하여 서로 다른 두 활성영역을 한 기판위에 성장함으로써 능동 반도체 광소자인 반도체 광증폭기와 수동 반도체 광소자인 다중모드 간섭 도파로, S-자 도파로를 집적하였다. 집적된 수동 소자부분의 손실을 측정하고 전광 논리소자를 구현하는 방법 중 하나인 반도체 광증폭기의 cross-gain modulation(XGM)특성을 측정하여 집적된 전광 논리소자로의 사용 가능성을 알아보았다.

• 마이크로전자및패키징학회지
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• 제18권1호
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• pp.41-47
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• 2011

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

• 대한기계학회논문집A
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• 제33권6호
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• pp.573-576
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• 2009

We present a passive flow-rate regulator, capable to compensate inlet pressure variation and to maintain a constant flow-rate for precise liquid control. Deflection of the parallel membrane valves in the passive flowrate regulator adjusts fluidic resistance according to inlet fluid pressure without any external energy. Compared to previous passive flow-rate regulators, the present device achieves precision flow regulation functions at the lower threshold compensation pressure of 20kPa with the simpler structure. In the experimental study, the fabricated device achieves the constant flow-rate of $6.09{\pm}0.32{\mu}l/s$ over the inlet pressure range of $20{\sim}50$ kPa. The present flow-rate regulator having simple structure and lower compensation pressure level demonstrates potentials for use in integrated micropump systems.

• Smart Structures and Systems
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• 제18권5호
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• pp.955-982
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• 2016

Recent studies integrating vibration control and structural health monitoring (SHM) use control devices and control algorithms to enable system identification and damage detection. In this study real-time SHM is used to enhance structural vibration control and reduce damage. A newly proposed control algorithm, including integrated real-time SHM and semi-active control strategy, is presented to mitigate both damage and seismic response of the main structure under strong seismic ground motion. The semi-active independently variable stiffness (SAIVS) device is used as semi-active control device in this investigation. The proper stiffness of SAIVS device is obtained using a new developed semi-active control algorithm based on real-time damage tracking of structure by damage detection algorithm based on identified system Markov parameters (DDA/ISMP) method. A three bay five story steel braced frame structure, which is equipped with one SAIVS device at each story, is employed to illustrate the efficiency of the proposed algorithm. The obtained results show that the proposed control algorithm could significantly decrease damage in most parts of the structure. Also, the dynamic response of the structure is effectively reduced by using the proposed control algorithm during four strong earthquakes. In comparison to passive on and off cases, the results demonstrate that the performance of the proposed control algorithm in decreasing both damage and dynamic responses of structure is significantly enhanced than the passive cases. Furthermore, from the energy consumption point of view the maximum and the cumulative control force in the proposed control algorithm is less than the passive-on case, considerably.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.406-407
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• 2009

In this paper, presents the Wilkinson power divider used integrated passive device (IPD) technology with excellent performance for personal communication services (PCS). The insertion loss of this power divider is 0.4 dB and the port isolation greater than 25 dB over the entire band. Return losses input and output ports are 18 dB and 19 dB, respectively. The power divider based on SI-GaAs substrate is designed within die size of about $0.775\times0.53\;mm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.50-51
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• 2009

This paper presents integrated passive device (IPD) based on Wilkinson power divider. The simulated 2-way power divider has the insertion loss of 3.123 dB, output isolation of -24.576 dB, input return loss of 26.415 dB, and output return loss of 33.478 dB. The power divider is based on IPD process design simulation at 2.5 GHz for WiMAX (Worldwide Interoperability for Microwave Access) applications. The chip size of power divider is $1\;\times\;1.2\;mm^2$, which is under fabrication.

• Journal of electromagnetic engineering and science
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• 제9권1호
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• pp.32-37
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• 2009

Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.