• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.11
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• pp.1287-1293
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• 2008

Antenna switch module(ASM) for quad-band was developed. This module was integrated by RFIPD(RF integrated passive device) and transistor switch instead of LTCC-type device using low pass filters, diodes and passive elements in RF front end module for cellular phone. This module leads to low cost and miniaturization(The area is $5{\times}5\;mm$ and the thickness is 0.8 mm). The insertion loss and the return loss of each band were averagely measured as 1.0 dB(insertion loss), 15.1 dB(GSM/EGSM return loss) and 19 dB(DCS/PCS return loss), respectively.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.975-976
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• 2006

The passive type RFID (Radio Frequency Identification) System using Surface Acoustic Wave (SAW) tag at 900 MHz in the range of more than 1 m was fabricated. To improve interrogation range of the system propose a method to increase isolation between transmitter and receiver. This method using a direct conversion architecture achieves a leakage rejection of 10 dB increased compared with conventional system. Measured interrogation range is more than 1 m.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.50-55
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• 2007

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.41-47
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• 2011

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.6
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• pp.573-576
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• 2009

We present a passive flow-rate regulator, capable to compensate inlet pressure variation and to maintain a constant flow-rate for precise liquid control. Deflection of the parallel membrane valves in the passive flowrate regulator adjusts fluidic resistance according to inlet fluid pressure without any external energy. Compared to previous passive flow-rate regulators, the present device achieves precision flow regulation functions at the lower threshold compensation pressure of 20kPa with the simpler structure. In the experimental study, the fabricated device achieves the constant flow-rate of $6.09{\pm}0.32{\mu}l/s$ over the inlet pressure range of $20{\sim}50$ kPa. The present flow-rate regulator having simple structure and lower compensation pressure level demonstrates potentials for use in integrated micropump systems.

• Smart Structures and Systems
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• v.18 no.5
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• pp.955-982
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• 2016

Recent studies integrating vibration control and structural health monitoring (SHM) use control devices and control algorithms to enable system identification and damage detection. In this study real-time SHM is used to enhance structural vibration control and reduce damage. A newly proposed control algorithm, including integrated real-time SHM and semi-active control strategy, is presented to mitigate both damage and seismic response of the main structure under strong seismic ground motion. The semi-active independently variable stiffness (SAIVS) device is used as semi-active control device in this investigation. The proper stiffness of SAIVS device is obtained using a new developed semi-active control algorithm based on real-time damage tracking of structure by damage detection algorithm based on identified system Markov parameters (DDA/ISMP) method. A three bay five story steel braced frame structure, which is equipped with one SAIVS device at each story, is employed to illustrate the efficiency of the proposed algorithm. The obtained results show that the proposed control algorithm could significantly decrease damage in most parts of the structure. Also, the dynamic response of the structure is effectively reduced by using the proposed control algorithm during four strong earthquakes. In comparison to passive on and off cases, the results demonstrate that the performance of the proposed control algorithm in decreasing both damage and dynamic responses of structure is significantly enhanced than the passive cases. Furthermore, from the energy consumption point of view the maximum and the cumulative control force in the proposed control algorithm is less than the passive-on case, considerably.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.406-407
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• 2009

In this paper, presents the Wilkinson power divider used integrated passive device (IPD) technology with excellent performance for personal communication services (PCS). The insertion loss of this power divider is 0.4 dB and the port isolation greater than 25 dB over the entire band. Return losses input and output ports are 18 dB and 19 dB, respectively. The power divider based on SI-GaAs substrate is designed within die size of about $0.775\times0.53\;mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.50-51
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• 2009

This paper presents integrated passive device (IPD) based on Wilkinson power divider. The simulated 2-way power divider has the insertion loss of 3.123 dB, output isolation of -24.576 dB, input return loss of 26.415 dB, and output return loss of 33.478 dB. The power divider is based on IPD process design simulation at 2.5 GHz for WiMAX (Worldwide Interoperability for Microwave Access) applications. The chip size of power divider is $1\;\times\;1.2\;mm^2$, which is under fabrication.

• Journal of electromagnetic engineering and science
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• v.9 no.1
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• pp.32-37
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• 2009

Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.