• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.410-413
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• 1999

Many researcher make efforts to develop an effective tracking method of accellatinn combined with the field simulation in actual system. Specially, the procelain type insulator is required exchanging to EPDM/SIR polymer insulator according to the recently environmental consideration. In this paper, we have developed the estimation system using the SD testing and the fractal mathematics. Those approach has been very successful to relative applied to the various parctical problem

• Proceedings of the KAIS Fall Conference
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• 2006.11a
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• pp.172-175
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• 2006

Owing to the strike of lighting a breakage of insulator would happen. This breakage may give rise to many problems such as increment of reclosing failure, a drop for reliance and a hardship of maintenance and repair. To solve those problems, this study develop a protected equipment for insulator which is suitable to 22.9kV distribution line towers and is purposed to investigation for a proper adaption, protection efficiency of insulator and effect of adaption.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.34-36
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• 2002

The objective of this study is to develop the composite insulator for 170kA disconnecting switch. In this paper, we have investigated the test procedure about each component(FRP tube, flange, shed) through technical standard(IEC 61462) and obtained demand characteristics by mechanical & electrical property test.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1044-1045
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• 2004

In this work, the characteristics of organic thin film transistors (OTFTs) with self-assembled monolayers (SAMs) on polymeric gate insulator have been investigated. The SAMs were formed using atomic layer deposition (ALD) method onto gate insulator. Upon the investigations, it was observed that SAMs modify the wettability of polymeric insulator and influence the growth of subsequent organic semiconductor, and thereby, electric conductivity and roughness of the pentacene film are improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.95-96
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• 2009

A fully depleted capacitorless 1-transistor dynamic random access memory (FD 1T-DRAM) based on a sSOI strained-silicon-on-insulator) wafer was investigated. The fabricated device showed excellent electrical characteristics of transistor such as low leakage current, low subthreshold swing, large on/off current ratio, and high electron mobility. The FD sSOI 1T-DRAM can be operated as memory device by the floating body effect when the substrate bias of -15 V is applied, and the FD sSOI 1T-DRAM showed large sensing margin and several milli seconds data retention time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.72-73
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• 2009

In this study, we fabricated of pentacene organic thin film trasistor(OTFT), which used aluminum oxide for the gate insulator on glass substrate. Aluminum oxide for OTFTs was deposited on the gate layer by E-beam evaporation. aluminum oxide fabricated various deposition rate. In this case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulator OTFT showed a threshold voltage of -1.36V, an on/off current ratio of $1.9{\times}l0^3$ and field effect mobility $0.023\;cm^2/V_s$.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.1
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• pp.89-95
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• 2010

A new live-line insulator tester was developed to detect faulty insulators in 154kV power transmission lines. This paper is the second part of the two-part paper and deals with its inspection algorithm development. Unlike normal condition with low pollution and low humidity, the inspection data measured in the field under high pollution or high humidity showed that the voltage distribution of an insulator string has offsets in comparison with those of others and its insulation resistances are greatly decreased, which leads to wrong results of the existing inspection algorithms under such conditions. To solve this problem, we propose new diagnosis algorithms that can exactly detect faulty insulators from measured data regardless of environmental conditions. Its effectiveness was validated by live-line field tests in actual power lines.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.99-100
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• 2008

Composite insulators are rapidly replacing their porcelain counterparts in electrical substation applications. The composite insulator provide technical and safety ad vantages over other types of insulator. These insulators consist of a FRP(Fiber-reinforced polymer), with two metal flanges and silicone rubber. In this paper, we have investigated the influence of electric field different shaped silicone shed under $SF_6$ gas. As a result, shape of silicone rubber does not effected a electric field. However, the shape of shed can be decided the creepage distance.

• Journal of Information Display
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• v.9 no.4
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• pp.35-38
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• 2008

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with $15.3\AA$ interplanar spacing. OTFT with PVPy exhibited a field-effect mobility of 0.23 $cm^2$/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high-performance OTFTs.