Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.04a
- /
- Pages.72-73
- /
- 2009
Effects of various deposition rate of $Al_2O_3$ gate insulator in OTFT
알루미늄 옥사이드를 절연층으로 이용한 유기박막 트랜지스터의 제작
- Choi, Kyung-Min (Department of Electronic Engineering, Kyungwon Univ.) ;
-
Hyung, Gun-Woo
(Department of Material Science and Engineering, Hongik Univ.)
;
-
Kim, Young-Kwan
(Department of Information Display, Hongik Univ.)
;
-
Cho, Eou-Sik
(Department of Electronic Engineering, Kyungwon Univ.)
;
-
Kwon, Sang-Jik
(Department of Electronic Engineering, Kyungwon Univ.)
- 최경민 (경원대학교 전기전자공학과) ;
-
형건우
(홍익대학교 신소재공학과)
;
-
김영관
(홍익대학교 정보디스플레이공학과)
;
-
조의식
(경원대학교 전기전자공학과)
;
-
권상직
(경원대학교 전기전자공학과)
- Published : 2009.04.24
Abstract
In this study, we fabricated of pentacene organic thin film trasistor(OTFT), which used aluminum oxide for the gate insulator on glass substrate. Aluminum oxide for OTFTs was deposited on the gate layer by E-beam evaporation. aluminum oxide fabricated various deposition rate. In this case of the deposition rate of