• Title/Summary/Keyword: input coupled

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Single Mode Lasing in InGaAsP/InP Semiconductor Coupled Square Ring Cavities

  • Hyun, Kyung-Sook;Lee, Taekyu;Moon, Hee-Jong
    • Journal of the Optical Society of Korea
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    • v.16 no.2
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    • pp.157-161
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    • 2012
  • This work reports the stability of the resonant characteristics in multimode interferometer coupled square ring semiconductor cavities. Based on the analysis of single square ring cavities, the single mode operations in the multimode interferometer coupled ring cavities are analyzed and the devices are demonstrated on the semiconductor multiple quantum well epitaxial structure. By varying the lasing conditions such as substrate temperature and input pump power, single resonant mode operations are also observed.

Analysis of Electromagnetically cCoupled Microstrip Transverse Dipole using Finite Difference Time Domain (FDTD) Method (시간영역 유한차분법을 이용한 전자기결합 마이크로스트립 수직다이폴의 해석)

  • 손영수;윤현보
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.5 no.4
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    • pp.30-39
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    • 1994
  • The resonant frequency, reflection cofficient and input impedance of a microstrip transverse dipole coupled electromagnetically are calculated using Finite Difference Time Domain(FDTD) method, and the evolution of gaussian pulse and spatial distribution of electromagnetic field components in the computation domain is represented graphically. Also, we confirmed the computation results show good agreement with the results of Method of Moment(MOM) and experiment[8] reported in the literature.

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A New GPS Receiver Correlator for the Deeply Coupled GPS/INS Integration System

  • Kim, Jeong-Won;Hwang, Dong-Hwan;Lee, Sang-Jeong
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • v.1
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    • pp.121-125
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    • 2006
  • A new GPS receiver correlator for the deeply-coupled GPS/INS integration system is proposed in order to the computation time problem of the Kalman filter. The proposed correlator consists of two early, prompt and late arm pairs. One pair is for detecting data bit transition boundary and another is for the correlator value calculation between input and replica signal. By detecting the data bit transition boundary, the measurement calculation time can be made longer than data bit period. As a result of this, the computational time problem of the integrated Kalman filter can be resolved. The validity of the proposed method is given through computer simulations.

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Floating Inverter Amplifiers with Enhanced Voltage Gains Employing Cross-Coupled Body Biasing

  • Jae Hoon Shim
    • Journal of Sensor Science and Technology
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    • v.33 no.1
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    • pp.12-17
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    • 2024
  • Floating inverter amplifiers (FIAs) have recently garnered considerable attention owing to their high energy efficiency and inherent resilience to input common-mode voltages and process-voltage-temperature variations. Since the voltage gain of a simple FIA is low, it is typically cascaded or cascoded to achieve a higher voltage gain. However, cascading poses stability concerns in closed-loop applications, while cascoding limits the output swing. This study introduces a gain-enhanced FIA that features cross-coupled body biasing. Through simulations, it is demonstrated that the proposed FIA designed using a 28-nm complementary metal-oxide-semiconductor technology with a 1-V power supply can achieve a high voltage gain (> 90 dB) suitable for dynamic open-loop applications. The proposed FIA can also be used as a closed-loop amplifier by adjusting the amount of positive feedback due to the cross-coupled body biasing. The capability of achieving a high gain with minimum-length devices makes the proposed FIA a promising candidate for low-power, high-speed sensor interface systems.

Class A CMOS current conveyors (A급 CMOS 전류 콘베이어 (CCII))

  • 차형우
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.9
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    • pp.1-9
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    • 1997
  • Novel class A CMOS second-generation current conveyors (CCII) using 0.6.mu.m n-well standard CMOS process for high-frequency current-mode signal processing were developed. The CCII consists of a regulated current-cell for the voltage input and a cascode current mirror for the current output. In this architecture, the two input stages are coupled by current mirrors to reduce the current input impedance. Measurements of the fabricated cCII show that the current input impedance is 308 .ohm. and the 3-dB cutoff frequency when used as a voltage amplifier extends beyond 10MHz. The linear dynamic ranges of voltage and current are from -0.5V to 1.5V and from -100.mu.A to +120.mu.A for supply voltage V$\_$DD/ = -V$\_$SS/=2.5V, respectively. The power dissipation is 2 mW and the active chip area is 0.2 * 0.2 [mm$\^$2/].

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Input Impedances of PWM DC-DC Converters: Unified Analysis and Application Example

  • Pidaparthy, Syam Kumar;Choi, Byungcho
    • Journal of Power Electronics
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    • v.16 no.6
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    • pp.2045-2056
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    • 2016
  • The input impedances of pulse width modulated (PWM) dc-to-dc converters, which dictate the outcomes of the dynamic interaction between dc-to-dc converters and their source subsystem, are analyzed in a general and unified manner. The input impedances of three basic PWM dc-to-dc converters are derived with both voltage mode control and current mode control. This paper presents the analytical expressions of the 24 input impedances of three basic PWM dc-to-dc converters with the two different control schemes in a factorized time-constant form. It also provides a comprehensive reference for future dynamic interaction analyses requiring knowledge of the converters' input impedances. The theoretical predictions of the paper are all supported by measurements on prototype dc-to-dc converters. The use of the presented results is demonstrated via a practical application example, which analyzes the small-signal dynamics of an input-filter coupled current-mode controlled buck converter. This elucidates the theoretical background for the previously-reported eccentric behavior of the converter.

A Design of Multiple Microstrip Line Coupled Circuit for Microwave Integrated Circuit (마이크로파 집적회로를 이용한 복수 마이크로스트립선 결합회로의 설계)

  • Park, Yhl;Kang, Hee-Chang;Chin, Youn-Kang
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.16 no.9
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    • pp.862-876
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    • 1991
  • In this theses, the procedure for finding the equivalent immittance of an n-line coupled structures is presented in terms of the normal mode parameters of the n-line coupled system. The above generalized equations can be applied to the various Coupled structures including directional couplers, DC blocks, bandpass/band elimination filters, and various other uniformly coupled filters. The design equations are based on a simplified TEM(Quasi TEM) mode. The obtained results and the definition of the scattering parameters for a general coupled line four port with arbitrary terminations are used to present the procedure to determine the optimum physical dimensions matching the given load impedances connected to input, output port. Multiple coupled rnicrostrip two-port with three lines circuit designed shows little discrepancy between the conventional method and this one. Four port with five lines were fabricated on teflon substrate($e$r=2.55) with its thickness h=l.588mm designed at the center frequency, 4 GHz. Their measured results are fairly close to the ones by computation.

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A Parallel Test Structure for eDRAM-based Tightly Coupled Memory in SoCs (시스템 온 칩 내 eDRAM을 사용한 Tightly Coupled Memory의 병렬 테스트 구조)

  • Kook, In-Sung;Lee, Jae-Min
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.4 no.3
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    • pp.209-216
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    • 2011
  • Recently the design of SoCs(System-on-Chips) in which TCM is embedded for high speed operation increases rapidly. In this paper, a parallel test structure for eDRAM-based TCM embedded in SoCs is proposed. In the presented technique, the MUT (Memory Under Test) is changed to parallel structure and it increases testability of MUT with boundary scan chains. The eDRAM is designed in structure for parallel test so that it can be tested for each modules. Dynamic test can be performed based on input-output data. The proposed techniques are verified their performance by circuits simulation.

Development of a Three-Dimensional Numerical Model of the Vertical Ground-Coupled Heat Exchanger Considering the Effects of the Thermal Capacity (내부 열용량을 고려한 수직 지중열교환기의 3차원 수치 모델 개발)

  • Kim, Eui-Jong
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.28 no.7
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    • pp.293-298
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    • 2016
  • A three-dimensional (3D) numerical model of the vertical ground-coupled heat exchanger is useful for analyzing the modern ground source heat pump system. Furthermore, a detailed description of the inner side of the exchanger allows to account for the effects of the thermal capacity. Thus, both methods are included in the proposed numerical model. For the ground portion, a FDM (Finite Difference Method) scheme has been applied using the Cartesian coordinate system. Cylindrical grids are applied for the borehole portion, and the U-tube configuration is adjusted at the grid, keeping the area and distance unchanged. Two sub-models are numerically coupled at each time-step using an iterative method for convergence. The model is validated by a reference 3D model under a continuous heat injection case. The results from a periodic heat injection input show that the proposed thermal capacity model reacts more slowly to the changes, resulting in lower borehole wall temperatures, when compared with a thermal resistance model. This implies that thermal capacity effects may be important factors for system controls.

Analysis of Electrical Properties of Ar Gas According to Input Pressure for Inductively Coupled Plasma (유도결합형 플라즈마에서 압력에 따른 Ar Gas의 전기적 특성분석)

  • Jo, Ju-Ung;Lee, Y.H.;Her, In-Sung;Kim, Kwang-Soo;Choi, Yong-Sung;Park, Dea-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1176-1179
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    • 2003
  • Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

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