• 제목/요약/키워드: induced gate noise

검색결과 11건 처리시간 0.021초

SOI LAN에서 게이트구조가 핫캐리어에 의한 성능저하에 미치는 영향 (Impact of Gate Structure On Hot-carrier-induced Performance Degradation in SOI low noise Amplifier)

  • 엄우용;이병진
    • 전자공학회논문지 IE
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    • 제47권1호
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    • pp.1-5
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    • 2010
  • 본 논문은 SOI 저장음 종폭기에서 게이트구조가 핫캐리어에 의한 성능저하에 미치는 영향융 조사하였다. 회로 시뮬레이션은 H-게이트와 T-게이트를 가지는 SOI MOSFET에서 측정된 S-파라미터와 Agilent사의 ADS를 사용하여 스트레스 전후의 H-게이트와 T-게이트 저잡음 증폭기의 성능을 비교하였다. 또한 저잡음 증폭기의 장치 열화와 성능 열화 사이의 관계뿐만 아니라 임피던스 매칭(S11), 잡음 지수와 이득에 관한 저잡음 증폭기의 성능 지수 등을 논의하였다.

Analytical Thermal Noise Model of Deep-submicron MOSFETs

  • Shin, Hyung-Cheol;Kim, Se-Young;Jeon, Jong-Wook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권3호
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    • pp.206-209
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    • 2006
  • This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

A Subthreshold Slope and Low-frequency Noise Characteristics in Charge Trap Flash Memories with Gate-All-Around and Planar Structure

  • Lee, Myoung-Sun;Joe, Sung-Min;Yun, Jang-Gn;Shin, Hyung-Cheol;Park, Byung-Gook;Park, Sang-Sik;Lee, Jong-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권3호
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    • pp.360-369
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    • 2012
  • The causes of showing different subthreshold slopes (SS) in programmed and erased states for two different charge trap flash (CTF) memory devices, SONOS type flash memory with gate-all-around (GAA) structure and TANOS type NAND flash memory with planar structure were investigated. To analyze the difference in SSs, TCAD simulation and low-frequency noise (LFN) measurement were fulfilled. The device simulation was performed to compare SSs considering the gate electric field effect to the channel and to check the localized trapped charge distribution effect in nitride layer while the comparison of noise power spectrum was carried out to inspect the generation of interface traps ($N_{IT}$). When each cell in the measured two memory devices is erased, the normalized LFN power is increased by one order of magnitude, which is attributed to the generation of $N_{IT}$ originated by the movement of hydrogen species ($h^*$) from the interface. As a result, the SS is degraded for the GAA SONOS memory device when erased where the $N_{IT}$ generation is a prominent factor. However, the TANOS memory cell is relatively immune to the SS degradation effect induced by the generated $N_{IT}$.

PD-SOI기판에 제작된 SiGe p-MOSFET의 신뢰성 분석 (Reliability Analysis of SiGe pMOSFETs Formed on PD-SOI)

  • 최상식;최아람;김재연;양전욱;한태현;조덕호;황용우;심규환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.533-533
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    • 2007
  • The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.

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Simulative Investigation of Spectral Amplitude Coding Based OCDMA System Using Quantum Logic Gate Code with NAND and Direct Detection Techniques

  • Sharma, Teena;Maddila, Ravi Kumar;Aljunid, Syed Alwee
    • Current Optics and Photonics
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    • 제3권6호
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    • pp.531-540
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    • 2019
  • Spectral Amplitude Coding Optical Code Division Multiple Access (SAC OCDMA) is an advanced technique in asynchronous environments. This paper proposes design and implementation of a novel quantum logic gate (QLG) code, with code construction algorithm generated without following any code mapping procedures for SAC system. The proposed code has a unitary matrices property with maximum overlap of one chip for various clients and no overlaps in spectra for the rest of the subscribers. Results indicate that a single algorithm produces the same length increment for codes with weight greater than two and follows the same signal to noise ratio (SNR) and bit error rate (BER) calculations for a higher number of users. This paper further examines the performance of a QLG code based SAC-OCDMA system with NAND and direct detection techniques. BER analysis was carried out for the proposed code and results were compared with existing MDW, RD and GMP codes. We demonstrate that the QLG code based system performs better in terms of cardinality, which is followed by improved BER. Numerical analysis reveals that for error free transmission (10-9), the suggested code supports approximately 170 users with code weight 4. Our results also conclude that the proposed code provides improvement in the code construction, cross-correlation and minimization of noises.

An MMIC VCO Design and Fabrication for PCS Applications

  • Kim, Young-Gi;Park, Jin-Ho
    • Journal of Electrical Engineering and information Science
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    • 제2권6호
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    • pp.202-207
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    • 1997
  • Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.

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정전유도(靜電誘導) 포토 트랜지스터의 잡음(雜音) 원인(原因) 분석(分析) (1) - 잡음(雜音) 원인(原因) 분석(分析)을 위한 SIPT 등가회로(等價回路) - (Analysis on the Noise Factors of Static Induction Photo-Transistor (SIPT) (1) - The SIPT's Equivalent Circuits for the Analysis on the Noise Factors -)

  • 김종화
    • 센서학회지
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    • 제4권4호
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    • pp.29-40
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    • 1995
  • 본논문(本論文)에서는 정전유도(靜電誘導) 트랜지스터의 잡음원인분석(雜音原因分析)을 위하여 직류(直流) 및 잡음특성(雜音特性), 잔존성분(殘存成分), 입력용량등(入力容量等)의 정무화(定武化)에 필요(必要)한 잡음(雜音) 등가회로(等價回路)를 제안(提案)하였다. 가장 단순(單純)한 잡음(雜音) 등가회로(等價回路)는 정전유도(靜電誘導) 트랜지스터의 동작원리(動作原理)에 의한 모델이며, 이 모델에 의한 실측치(實測値)가 산탄(shot) 잡음(雜音)보다 작게 나타났다. 소스 저항(抵抗)이 삽입(揷入)된 등가회로(等價回路)에서는 소스 저항(抵抗)의 부귀환효과(負歸還效果)에 의하여 산탄 잡음(雜音)이 저감(低減)됨을 확인(確認)하였다. 정확(正確)한 잡음저감원인(雜音低減原因)을 분석(分析)하기 위하여 소스 저항(抵抗)과 드레인 저항(低抗)의 계산식(計算式)을 유도(誘導)하기 위한 등가회로(等價回路)를 제안(提案)하였다. 등가회로(等價回路) 확인(確認) 실험(實驗)에서는 잔존성분(殘存成分)에 대한 신호원저항(信號源抵抗)과 출력부하저항(出力負荷抵抗)의 영향(影響)은 작으며, 잔존성분(殘存成分)은 입력환산등가잡음저항(入力換算等價雜音抵抗)으로 나타낼 수 있다. 또한, 입력용량(入力容量)은 부하저항(負荷抵抗)이 $0{\Omega}$일 때 13.6pF이며, 게이트 배선등(配線等) 정전유도(靜電誘導) 트랜지스터 동작(動作)에 직접(直接) 관여(關與)하지 않는 용량(容量)은 10pF정도(程度)이다.

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고속철도 터널에서 발생하는 파동현상에 관한 충격파관의 연구(1) - 압축파의 특성에 대하여 - (Study of Shock Tube for Wave Phenomenon in High Speed Railway Tunnel(1) - On the characteristics of Compression Wave -)

  • 김희동
    • 대한기계학회논문집
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    • 제18권10호
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    • pp.2686-2697
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    • 1994
  • When a railway train enters a tunnel at high speed, a compression wave is formed in front of the train and propagates along the tunnel. The compression wave subsequently emerges from the exit of the tunnel, which causes an impulsive noise. In order to estimate the magnitudes of the noises and to effectively minimize them, the characteristics of the compression wave propagating in a tunnel must be understood. In the present paper, the experimental and analytical investigations on the attenuation and distortion of the propagating compression waves were carried out using a model tunnel. This facility is a kind of open-ended shock tube with a fast-opening gate valve instead of a general diaphragm. One-dimensional flow model employed in the present study could appropriately predict the strength of the compression wave, Mach number and flow velocity induced by the compression wave. The experimental results show that the strength of a compression wave decreases with the distance from the tunnel entrance. The decreasing rate of the wave strength and pressure gradient in the wave is strongly dependent on the strength of the initial compression wave at the tunnel entrance.

디지털 임피던스 영상 시스템의 설계 및 구현 (Design and Implementation of Digital Electrical Impedance Tomography System)

  • 오동인;백상민;이재상;우응제
    • 대한의용생체공학회:의공학회지
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    • 제25권4호
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    • pp.269-275
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    • 2004
  • 인체내부의 각 조직은 서로 다른 저항률(resistivity)분포를 가지며, 조직의 생리학적, 기능적 변화에 따라 임피던스가 변화한다. 본 논문에서는 주로 기능적 영상을 위한 임피던스 단층촬영 (EIT, electrical impedance tomography) 시스템의 설계와 구현 결과를 기술한다. EIT 시스템은 인체의 표면에 부착한 전극을 통해 전류를 주입하고 이로 인해 유기되는 전압을 측정하여, 내부 임피던스의 단층영상을 복원하는 기술이다. EIT 시스템의 개발에 있어서는 영상복원의 난해함과 아울러 측정시스템의 낮은 정확도가 기술적인 문제가 되고 있다. 본 논문은 기존 EIT 시스템의 문제점을 파악하고 디지털 기술을 이용하여 보다 정확도가 높고 안정된 시스템을 설계 및 제작하였다. 크기와 주파수 및 파형의 변화 가능한 50KHz의 정현파 전류를 인체에 주입하기 위해 필요한 정밀 정전류원을 설계하여 제작한 결과, 출력 파형의 고조파 왜곡(THD, total harmonic distortion)이 0.0029%이고 진폭 안정도가 0.022%인 전류를 출력 할 수 있었다. 또한, 여러개의 정전류원을 사용함으로써 채 널간 오차를 유발하던 기존의 시스템을 변경하여, 하나의 전류원에서 만들어진 전류를 각 채널로 스위칭하여 공급함으로써 이로 인한 오차를 줄였다. 주입전류에 의해 유기된 전압의 정밀한 측정을 위해 높은 정밀도를 갖는 전압측정기가 필요하므로 차동증폭기, 고속 ADC및 FPGA(field programmable gate array)를 사용한 디지털 위상감응복조기 (phase-sensitive demodulator )를 제작하였다. 이때 병렬 처리를 가능하게 하여 모든 전극 채널에서 동시에 측정을 수행 할 수 있도록 하였으며, 제작된 전압측정기의 SNR(signal-to-noise ratio)은 90dB 이다. 이러한 EIT 시스템을 사용하여 배경의 전해질 용액에 비해 두 배의 저항률을 가지는 물체(바나나)에 대한 기초적인 영상복원 실험을 수행하였다. 본 시스템은 16채널로 제작되었으나 전체를 모듈형으로 설계하여 쉽게 채널의 수를 늘릴 수 있는 장점을 가지고 있어서 향후 64채널 이상의 디지털 EIT시스템을 제작할 계획이며, 인체 내부의 임피던스 분포를 3차원적 으로 영상화하는 연구를 수행 할 예정이다.

Ethanol inhibits Kv7.2/7.3 channel open probability by reducing the PI(4,5)P2 sensitivity of Kv7.2 subunit

  • Kim, Kwon-Woo;Suh, Byung-Chang
    • BMB Reports
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    • 제54권6호
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    • pp.311-316
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    • 2021
  • Ethanol often causes critical health problems by altering the neuronal activities of the central and peripheral nerve systems. One of the cellular targets of ethanol is the plasma membrane proteins including ion channels and receptors. Recently, we reported that ethanol elevates membrane excitability in sympathetic neurons by inhibiting Kv7.2/7.3 channels in a cell type-specific manner. Even though our studies revealed that the inhibitory effects of ethanol on the Kv7.2/7.3 channel was diminished by the increase of plasma membrane phosphatidylinositol 4,5-bisphosphate (PI(4,5)P2), the molecular mechanism of ethanol on Kv7.2/7.3 channel inhibition remains unclear. By investigating the kinetics of Kv7.2/7.3 current in high K+ solution, we found that ethanol inhibited Kv7.2/7.3 channels through a mechanism distinct from that of tetraethylammonium (TEA) which enters into the pore and blocks the gate of the channels. Using a non-stationary noise analysis (NSNA), we demonstrated that the inhibitory effect of ethanol is the result of reduction of open probability (PO) of the Kv7.2/7.3 channel, but not of a single channel current (i) or channel number (N). Finally, ethanol selectively facilitated the kinetics of Kv7.2 current suppression by voltage-sensing phosphatase (VSP)-induced PI(4,5)P2 depletion, while it slowed down Kv7.2 current recovery from the VSP-induced inhibition. Together our results suggest that ethanol regulates neuronal activity through the reduction of open probability and PI(4,5)P2 sensitivity of Kv7.2/7.3 channels.