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Impact of Gate Structure On Hot-carrier-induced Performance Degradation in SOI low noise Amplifier  

Ohm, Woo-Yong (Dept. of Digital Electronics., Inha Tech. College)
Lee, Byong-Jin (Dept. of Electronic Engineering, Univ. of Incheon)
Publication Information
전자공학회논문지 IE / v.47, no.1, 2010 , pp. 1-5 More about this Journal
Abstract
This paper presents new results of the impact of gate structure on hot-carrier-induced performance degradation in SOI low noise amplifier. Circuit simulations were carried out using the measured S-parameters of H--gate and T-gate SOI MOSFETs and Agilent's Advanced Design System (ADS) to compare the performance of H-gate LNA and T-gate LNA before and after stress. We will discuss the figure of merit for the characterization of low noise amplifier in terms of impedance matching (S11), noise figure, and gain as well as the relation between device degradation and performance degradation of LNA.
Keywords
gate structure; hot-carrier; SOI MOSFET; LNA; H-gate; T-gate;
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