• Title/Summary/Keyword: indium zinc oxide

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열처리에 따른 a-IGZO 소자의 전기적 특성과 조성 분포

  • Gang, Ji-Yeon;Lee, Tae-Il;Myeong, Jae-Min
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.43.1-43.1
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    • 2011
  • Hydrogenated amorphous Si (a-Si:H), low temperature poly Si (LTPS) 등 기존 thin film transistors (TFTs)에 사용되던 채널 물질을 대체할 재료로써 다양한 연구가 진행되고 있는 amorphous indium-gallium-zinc-oxide (a-IGZO)는 TFT에 적용하였을 때 뛰어난 전기적 특성과 재연성을 나타낼 뿐만 아니라 넓은 밴드갭을 가져 투명소자로도 응용이 가능하다. 본 연구에서는 a-IGZO의 열처리에 따른 소자의 전기적 특성과 조성 분포의 관계를 확인하기 위해 다음과 같이 실험을 진행하였다. Si/SiO2 기판 위에 DC sputter를 이용하여 IGZO를 증착하고 $350^{\circ}C$에서 열처리를 한 후 evaporator로 Al 전극을 형성시켰다. 이 때 전기적 특성의 변화를 비교하기 위해 열처리 한 샘플과 열처리 하지 않은 샘플에 대해 I-V 특성을 측정하였고, 채널 내부의 조성 분포 변화를 transmission electron microscopy (TEM)의 energy dispersive spectrometer (EDS)를 이용하여 관찰하였다. 그 결과 열처리 된 a-IGZO 채널 층의 산소 비율이 감소하였으며 전체적인 조성이 고르게 분포 되었고 전기적 특성은 향상되었다.

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Dynamic Response Behavior of Femtosecond Laser-Annealed Indium Zinc Oxide Thin-Film Transistors

  • Shan, Fei;Kim, Sung-Jin
    • Journal of Electrical Engineering and Technology
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    • v.12 no.6
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    • pp.2353-2358
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    • 2017
  • A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

The Effects of SiO Gas Barrier Film on the Depositing IZO/Glass Thin Film (IZO/Glass 성막 시 SiO가스배리어막의 영향)

  • Kim, Do-Hyoung;Yoon, Han-Ki;Qiu, Zhiyong;Murakami, Ri-ichi
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.215-219
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    • 2007
  • In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

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Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-film Transistors by AZO/Ag/AZO Multilayer Transparent Electrode

  • No, Yeong-Su;Yang, Jeong-Do;Park, Dong-Hui;Wi, Chang-Hwan;Jo, Se-Hui;Kim, Tae-Hwan;Choe, Won-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.443-443
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    • 2012
  • We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

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Effects of an Aluminum Contact on the Carrier Mobility and Threshold Voltage of Zinc Tin Oxide Transparent Thin Film Transistors

  • Ma, Tae-Young
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.609-614
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    • 2014
  • We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

Influence of in-situ remote plasma treatment on characteristics of amorphous indium gallium zinc oxide thin film-based transistors

  • Gang, Tae-Seong;Gu, Ja-Hyeon;Hong, Jin-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.257-257
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    • 2011
  • The amorphous indium-gallium-zinc-oxide (a-IGZO) materials for use in high performance display research fields are strongly investigated due to its good performance, such as high mobility and better transparency. However, the stability of a-IGZO materials is increasingly becoming one of critical issues due to the sub-gap electron trap sites induced by rough interfaces during deposition processing. It is well-known that the threshold voltage shift is related to interface roughness and oxygen vacancy formed by breaking weak chemical bonds. Here, we report the better properties of transparent oxide transistors by reducing the threshold voltage shift with an external rf plasma supported magnetron sputtering system. Mainly, our sputtering method causes the surface of sample to be sleek, so that it prevents the formation of various defects, such as shallow electron trap sites in the interface. External rf power was applied from 0 to 50W during RF sputtering process to enhance the stability of our oxide transistor without having a large voltage shift. To observe the effects of external rf-plasma source on the properties of our devices, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) are carried out to observe surface roughness and morphology of sputtered thin film. In addition, typical electrical properties, such as I-V characteristics are analyzed.

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Fast liquid crystal switching performance on indium zinc oxide films with low curing temperature via ion-beam irradiation (이온빔 조사된 저온 소성 인듐 아연 산화막을 이용한 액정의 고속 스위칭 특성 연구)

  • Oh, Byeong-Yun
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.904-909
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    • 2019
  • Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

Transparent-Oxide-Semiconductor Based Staggered Self-Alignment Thin-Film Transistors

  • Yamagishi, Akira;Naka, Shigeki;Okada, Hiroyuki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1105-1106
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    • 2008
  • Staggered type self-aligned transparent-oxide-semiconductor transistors with indium-zinc-oxide as a semiconductor have studied. In this device fabrication, successive sputtering of oxide semiconductor and insulator without breaking of vacuum and without exposing in air, humidity and oxygen can be realized because oxide semiconductor is transparent. As a result of fabrication, transistor characteristics with mobility of $30cm^2/Vs$ and on-off ratio of $10^5$ could be obtained for the newly developed self-alignment device structure.

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Influence of Compositions on Sol-Gel Derived Amorphous In-Ga-Zn Oxide Semiconductor Transistors

  • Kim, Dong-Jo;Koo, Chang-Young;Song, Keun-Kyu;Jeong, Young-Min;Moon, Joo-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1586-1589
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    • 2009
  • We investigated the influence of chemical compositions of gallium and indium cations on the performance of solgel derived amorphous gallium indium zinc oxide (a-GIZO) based thin-film transistors (TFTs). Systematical composition study allows us to understand the solutionprocessed a-GIZO TFTs. Understanding of the compositional influence can be utilized for tailoring the solution processed amorphous oxide TFTs for the specific applications.

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