• Proceedings of the KSME Conference
• /
• 2004.11a
• /
• pp.232-237
• /
• 2004

The tension behavior of Nicalon/CAS glass-ceramic matrix composites was investigated. Infrared (IR) thermography was employed for two different types of $Nicalon^{TM}/CAS$ composites, i.e., cross-ply and unidirectional specimens. During tensile testing, an IR camera was used for in-situ monitoring of progressive damages of $Nicalon^{TM}/CAS$ samples. The IR camera provided the temperature changes during tensile testing. Microstructural characterization using scanning electron microscopy (SEM) was performed to investigate the fracture mechanisms of $Nicalon^{TM}/CAS$ composites. In this investigation, the thermographic NDE technique was used to facilitate a better understanding of the fracture mechanisms of the $Nicalon^{TM}/CAS$ composites during tensile testing.

• 한국생물공학회:학술대회논문집
• /
• 2005.10a
• /
• pp.860-863
• /
• 2005

The microcapsules containing fragrant oil as functional material were prepared by in-situ polymerization with prepolymer that was made from melamine-formaldehyde (MF) as wall material of microcapsules. The effects of polymerization variables, such as the nature and concentration of surfactants, stirring rate, and stirring time, on the size and distribution of the particles were investigated. Fourier transform-infrared spectroscopy (FT-IR), thermal analysis, particle size analysis, scanning electron microscopy (SEM) observation were used to investigate the characteristics of microcapsules. Through the FT-IR and SEM analysis, we found that the prepared microcapsules were containing fragrant oil and the shape of particle was spherical. The nature and concentration of surfactants, stirring rate, and stirring time had profound effects on the particle size and particle size distribution.

• Journal of the Korean Society for Heat Treatment
• /
• v.22 no.6
• /
• pp.354-360
• /
• 2009

This paper reports the oxidation mechanism of epitaxial Ni thin films grown on GaN/sapphire(0001) substrates, investigated by real-time x-ray diffraction and scanning electron microscopy. At the initial stage of oxidation process, a thin NiO layer with a thickness of ${\sim}50\;{\AA}$ was formed on top of the Ni films. The growth of such NiO layer was saturated and then served as a passive oxide layer for the further oxidation process. For the second oxidation stage, host Ni atoms diffused out to the surfaces of initially formed NiO layer through the defects running vertically to form NiO grains, while the sites that were occupied by host Ni, became voids. The crystallographic properties of resultant NiO films, such as grain size and mosaic distribution, rely highly on the oxidation temperatures.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.11
• /
• pp.2701-2706
• /
• 2009

The polymer blends containing polypyrrole (PPy) and the sulphonic acids such as β-naphthalene sulfonic acid (NSA), camphor sulfonic acid (CSA), and dodecylbenzenesulfonic acid (DBSA) were synthesized by in situ deposition technique in an aqueous media using ammonium per sulfate (APS) as an initiator. The obtained films were characterized by scanning electron microscopy (SEM), and the thermal behavior of these polymer blends was analyzed by thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The temperature-dependent (DC) conductivity of the obtained films shows a semiconducting behavior with a negative temperature coefficient of resistivity (TCR). The conductivity data were also analyzed through Mott’s equation, which provides the variable range hopping model in three dimensions. The parameters such as density of states at the Fermi energy, hopping energy, and hopping distance were calculated for PPy, PPy-NSA, PPy-CSA, and PPy-DBSA films, and the data were compared.

• Proceedings of the Korean Society of Plant Pathology Conference
• /
• 2003.10a
• /
• pp.72.1-72
• /
• 2003

Generally, plants defend themselves against pathogens by structural and biochemical reactions. Defense structures act as physical barriers and inhibit the pathogen from gaining entrance and spreading through the plant. Xanthomonas axonopodis pv glycines, the causal pathogen of bacterial pustule of soybean, causes hypersensitive response (HR). When pepper fruits were inoculated with X. axonopodis pv. glycines, in situ, time-series defense-related structural changes occurred in the inoculated sites. Early responses were programmed cell death (PCD), characterized by condensation and vacuolization of the cytoplasm, condensation of nuclear materials, and fragmentation of the nuclear DNA, which were observed by transmission electron microscopy. Nuclear fragmentation was proven by TUNEL method under confocal laser scanning microscopy and DNA laddering through eletrophoresis. At later stages, plant responses were cell elongation and cell division, forming a periderm-like boundary layer that demarcated healthy tissues from the inoculation sites. Using several stains such as toluidine blue, sudan IV, annexin V, and phloroglucinol-HCl, defense-related materials and structural changes were also examined.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.122-122
• /
• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• Composites Research
• /
• v.33 no.6
• /
• pp.415-420
• /
• 2020

The interfacial properties in carbon fiber composites, which control the overall mechanical properties of the composites, are very important. Effective interface enhancement work is conducted on the modification of the carbon fiber surface with carbon nanotubes (CNTs). Nonetheless, most surface modifications methods do have their own drawbacks such as high temperatures with a range of 600~1000℃, which should be implemented for CNT growth on carbon fibers that can cause carbon fiber damages affecting deterioration of composites properties. This study includes the use of in-situ interfacial polymerization of polyamide 610/CNT to fabricate the carbon fiber composites. The process is very fast and continuous and can disperse CNTs with random orientation in the interface resulting in enhanced interfacial properties. Scanning electron microscopy was conducted to investigate the CNT dispersion and composites morphology, and the thermal stability of the composites was analyzed via thermogravimetric analysis. In addition, fiber pull-out tests were used to assess interfacial strength between fiber and matrix.

• Korean Journal of Materials Research
• /
• v.28 no.4
• /
• pp.208-213
• /
• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• The Plant Pathology Journal
• /
• v.39 no.3
• /
• pp.265-274
• /
• 2023

Citrus black rot is a serious disease of citrus plants caused by Alternaria citri. The current study aimed to synthesize zinc oxide nanoparticles (ZnO-NPs) by chemically or green method and investigate their antifungal activity against A. citri. The sizes of synthesized as measured by transmission electron microscope of ZnO-NPs were 88 and 65 nm for chemical and green methods, respectively. The studied prepared ZnO-NPs were applied, in vitro and in situ, at different concentrations (500, 1,000, and 2,000 ㎍/ml) in post-harvest treatment on navel orange fruits to verify the possible control effect against A. citri. Results of in vitro assay demonstrated that, at concentration 2,000 ㎍/ml, the green ZnO-NPs was able to inhibit about 61% of the fungal growth followed by 52% of chemical ZnO-NPs. In addition, scanning electron microscopy of A. citri treated in vitro with green ZnO-NPs showed swelling and deformation of conidia. Results showed also that, using a chemically and green ZnO-NPs at 2,000 ㎍/ml in situ in post-harvest treatment of orange, artificially-infected with A. citri, has reduced the disease severity to 6.92% and 9.23%, respectively, compared to 23.84% of positive control (non-treated fruits) after 20 days of storage. The out findings of this study may contribute to the development of a natural, effective, and eco-friendly strategy for eradicating harmful phytopathogenic fungi.

• Korean Journal of Materials Research
• /
• v.22 no.4
• /
• pp.202-206
• /
• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.