• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1706-1707
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• 2007

A possibility of work function engineering on ZnO thin film is studied by in-situ and ex-situ doping process. The work function of ZnO thin film decreases with increasing boron and phosphorus doping quantity. But, the work function of Al-doped ZnO (AZO) thin film increases as the boron doping quantity incresess. The range of work function change on ZnO thin films is 3.5 eV to 5.5 eV. This result shows that the work function of ZnO thin film is indeed engineerable by changing materials of dopants and their compositional distribution of surface. We also discuss the possible mechanism of work function engineering on ZnO thin films.

• Electronic Materials Letters
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• 제14권6호
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• pp.755-765
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• 2018

In situ nitrogen doped hard carbon nanotubes (NHCNT) were fabricated by pyrolyzing tubular nitrogen doped conjugated microporous polymer. KOH activated NHCNT (K-NHCNT) were also prepared to improve their porous structure. XRD, SEM, TEM, EDS, XPS, Raman spectra, $N_2$ adsorption-desorption, galvanostatic charging-discharge, cyclic voltammetry and EIS were used to characterize the structure and performance of NHCNT and K-NHCNT. XRD and Raman spectra reveal K-NHCNT own a more disorder carbon. SEM indicate that the diameters of K-NHCNT are smaller than that of NHCNT. TEM and EDS further indicate that K-NHCNT are hollow carbon nanotubes with nitrogen uniformly distributed. $N_2$ adsorption-desorption analysis reveals that K-NHCNT have an ultra high specific surface area of $1787.37m^2g^{-1}$, which is much larger than that of NHCNT ($531.98m^2g^{-1}$). K-NHCNT delivers a high reversible capacity of $918mAh\;g^{-1}$ at $0.6A\;g^{-1}$. Even after 350 times cycling, the capacity of K-NHCNT cycled after 350 cycles at $0.6A\;g^{-1}$ is still as high as $591.6mAh\;g^{-1}$. Such outstanding electrochemical performance of the K-NHCNT are clearly attributed by its superior characters, which have great advantages over those commercial available carbon nanotubes ($200-450mAh\;g^{-1}$) not only for its desired electrochemical performance but also for its easily and scaling-up preparation.

• Progress in Superconductivity
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• 제12권1호
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• pp.32-35
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• 2010

Potassium doped $BaFe_2As_2$ superconducting thin films by using an ex situ pulsed laser deposition technique were fabricated in various conditions to find out an optimal growth condition. Controlled conditions were annealing temperature, annealing time, and mass of potassium. The $Ba_{1-x}K_xFe_2As_2$ thin films which has most good quality is fabricated at a condition of annealing temperature at $700^{\circ}C$, annealing time of 60 minutes, and 0.6 g of potassium lumps. In this condition we were able to fabricate good quality films with high transition temperature of ~ 39 K.

• 한국표면공학회지
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• 제51권6호
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• pp.365-371
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• 2018

1D core-shell nanostructures have attracted great attention due to their enhanced physical and chemical properties. Specifically, oriented single-crystalline $TiO_2$ nanorods or nanowires on a transparent conductive substrate would be more desirable as the building core backbone. However, a facile approach to produce such structure-based hybrids is highly demanded. In this study, a three-step hydrothermal method was developed to grow NiMn-layered double hydroxide-decorated $TiO_2$/carbon core-shell nanorod arrays on transparent conductive fluorine-doped tin oxide (FTO) substrates. XRD, SEM, TEM, XPS and Raman were used to analyze the obtained samples. The in-situ fabricated hybrid nanostructured materials are expected to be applicable for photoelectrode working in water splitting.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.71-74
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• 1998

$Er^{3+}$ doped $NdF_{3}$ single crystalline thin films with smooth, microcrack-free, and high-crystalline quality were grown on $CaF_{2}(111)$ substrate at $500^{\circ}C$by molecular beem epitaxy(MBE). The relation-ship between subcell and supercell showing the reconstructed $3^{1/2} \times 3^{1/2}$ structure was studied by reflection high-energy electron diffraction(RHEED) investigation. The film surface and the growth mode were examined in studied by RHEED patterns and atomic force microscope(AFM) images ex situ. The crystallinity of film and the lattice mismatch between $NdF_{3}Er}^{3+}(0002)$ film and $CaF_{2}(111)$ substrate depending in the $Er^{3+}$ concentration were investigated by X-ray rocking curve analysis.

• 한국분말재료학회지
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• 제1권2호
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• pp.208-216
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• 1994

A radically new approach to the in situ synthesis of the consituent phases of a composite structure has enabled the production of a new WC/Co materials with an ultrafine microstructure. The process for synthesizing nanophase WC/Co powders consists of spray drying from solution to form a homogeneous precursor powder, and thermochemical conversion of the precursor powder to the nanophase WC/Co powder. Near theoretical density of pure nanophase WC-10 wt%Co has been obtained in only 30 sec at 140$0^{\circ}C$. But WC particles were grown up very rapidly with longer sintering time to get full density. To overcome coarsening of WC particle during sintering, VC, TaC and VC/TaC were used as the grain growth inhibitor with different amount respectively. VC/TaC doped WC-10 wt%Co was shown superior hardness and TRS and microstructure was maintained ultrafine scale (average WC size is less than 0.1 ${\mu}{\textrm}{m}$).

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2000년도 추계종합학술대회
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• pp.475-479
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• 2000

The box capacitor structure with H5G-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a 0.482f${\mu}{\textrm}{m}$$^2$ for 128Mbit DRAM. An H5G-Si formation technology with seeding method, which employs Si$_2$H$_{6}$ molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled H5G-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.s.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.40-40
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• 2009

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.16-16
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.