• 전기의세계
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• 제24권5호
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• pp.91-96
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• 1975

In this paper, with a view to study the impurity effect, Ge-Si-Te memory devices are investigated experimentally about the dependence of temperature and frequency. Conductivity depends upon temperature and frequency and it is some-what influenced by heat treatment. With increasing frequency, conductivity has a tendency to be independent of temperature. We found that switching time and threshold voltage are reduced by it.

• 공업화학
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• 제27권3호
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• pp.335-341
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• 2016

본 연구에서는 지상 및 미소중력환경하에서 물리적 승화법 공정에서의 확산-대류유동에 미치는 불순물의 영향을 이론적으로 $Hg_2Cl_2-I_2$ 시스템에 적용하여 규명하는 것이다. 이론적 해석은 증기상에서 확산-대류 흐름, 열 및 물질전달을 속도 벡터 흐름, 유선, 온도, 농도 분포를 통하여 제시된다. 결정 영역에서의 전체 몰플럭스는 중력가속도와 성분 $I_2$, 불순물에 상당히 민감하게 반응한다. 성분 $I_2$을 증가시켰을 때, 농도 대류효과는 확산-대류 유동흐름을 안정화시키는 경향이 있다. 지상중력가속도의 0.001환경에서는 유동흐름은 1차원포물선의 흐름 구조를 나타내며, 확산지배형태를 보여주고 있다. $10^{-3}$지상중력가속도 이하에서는 대류 영향은 무시할 수 있다.

• 한국세라믹학회지
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• 제48권5호
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• pp.426-432
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• 2011

The oxidation behavior of CVD ${\beta}$-SiC was investigated for Very High Temperature Gas-Cooled Reactor (VHTR) applications. This study focused on the surface analysis of the oxidized CVD ${\beta}$-SiC to observe the effect of impurity gases on active/passive oxidation. Oxidation test was carried out at $950^{\circ}C$ in the impurity-controlled helium environment that contained $H_2$, $H_2O$, CO, and $CH_4$ in order to simulate VHTR coolant chemistry. For 250 h of exposure to the helium, weight changes were barely measurable when $H_2O$ in the bulk gas was carefully controlled between 0.02 and 0.1 Pa. Surface morphology also did not change based on AFM observation. However, XPS analysis results indicated that a very small amount of $SiO_2$ was formed by the reaction of SiC with $H_2O$ at the initial stage of oxidation when $H_2O$ partial pressure in the CVD ${\beta}$-SiC surface placed on the passive oxidation region. As the oxidation progressed, $H_2O$ consumed and its partial pressure in the surface decreased to the active/passive oxidation transition region. At the steady state, more oxidation did not observable up to 250 h of exposure.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.581-588
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• 1997

The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

• 한국산학기술학회논문지
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• 제16권12호
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• pp.8870-8878
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• 2015

이산화탄소 포집 및 저장기술(Carbon Capture&Storage, CCS)은 대규모 배출원으로부터 이산화탄소를 포집하여 지중의 안전한 지질구조에 수천년 이상 안정적으로 저장하는 기술이다. 포집된 이산화탄소에는 필연적으로 불순물이 포함되어있으며, 특히 연소과정에 투입되는 공기를 구성하는 대표적인 물질들인 질소, 산소, 아르곤 등이 유입될 수 있다. 이러한 불순물들은 포집 이후의 전체 공정에 다양한 영향을 미치게 된다. 본 연구에서는 이산화탄소 혼합물의 관내유동에 다양한 불순물이 미치는 영향을 평가할 수 있는 실험 장치를 설계 및 제작하였으며 특히 이산화탄소 혼합물의 관내유동에 있어 아르곤 불순물이 미치는 영향을 평가하였다. 즉, 이산화탄소-아르곤 혼합물 2상유동의 압력강하와 유동양식을 실험적으로 분석하였으며, 이를 다양한 압력강하 모델 및 상관식과 비교하여 추후 이산화탄소 혼합물 관련 공정 설계 시 참고할 수 있는 기초 데이터를 제시하고자 하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.134-136
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• 2001

In this paper, we investigated the electrical and piezoelectric characteristics of $Pb(Sb,Nb)O_3-Pb(Zr,Ti)O_3$ for piezoelectric transformer and actuator etc. Effect of $WO_3$ addition($0\;wt%{\sim}0.6\;wt%$) on the PSN-PZT ceramic was investigated. Anisotropic properties of electromechanical coupling factor and piezoelectric properties were proved to be varied with amount of $WO_3$ impurity and sintering temperature($1100{\sim}1300^{\circ}C$). The electromechanical coupling factor $k_p$ of 0.41 and the mechanical quality factor am of 1243 were obtained from the specimen with 0.6 wt% $WO_3$ addition sintered at $1100^{\circ}C$ Experimental results indicated that the PZT-PSN ceramics with $WO_3$ impurity can be effectively used for piezoelectric transformer and actuator. etc.

• 한국결정성장학회지
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• 제6권2호
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• pp.141-154
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• 1996

Hydride 기상증착법으로 성장시킨 InP 에피충들을 FTPL 분광법과 변온 Hall 측정법으로 조사하였다. 원료 공급 지역의 온도, 주입되는 HCI과 $PH_{3}$의 몰분율 등 공정변수가 배경 불순물의 주입에 미치는 영향을 조사한 결과, 배경 전하 농도는 원료 공급지역의 온도가 감소 할수록 감소하고 HCl의 주입량이 증가할수록 감소하나 $PH_{3}$의 주입량에는 연구된 몰분율 범위 내에서 상대적으로 무관함을 알 수 있었다. 또한 FTPL spectrum 분석 결과 에피충 내부에 배 경 donor들과 acceptor들이 존재함을 얄 수 있었고 특히, Si donor들, Zn acceptor들, 확인되지 않은 acceptor들이 주된 불순물로 존재함을 알 수 있었다.

• 한국수소및신에너지학회논문집
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• 제19권4호
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• pp.291-298
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• 2008

Carbon monoxide(CO) is one of the contamination source in reformed hydrogen fuel with an influence on performance of polymer electrolyte membrane fuel cell(PEMFC). The studies of CO injection presented here give information about poisoning and recovery processes. The aim of this research is to investigate cell performance decline due to carbon monoxide impurity in hydrogen. Performance of PEM fuel cell was investigated using current vs. potential experiment, long time(10 hours) test, cyclic feeding test and electrochemical impedance spectra. The concentrations of carbon monoxide were changed up to 10 ppm. Performance degradation due to carbon monoxide contamination in anode fuel was observed at high concentration of carbon monoxide. The CO gas showed influence on the charge transfer reaction. The performance recovery was confirmed in long time test when pure hydrogen was provided for 1 hour after carbon monoxide had been supplied. The result of this study could be used as a basis of various reformation process design and fuel quality determination.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.88-90
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• 1990

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].