The Effect of Temperature and Frequency on Ge-Si-Te Memory Devices

Ge-Si-Te 기억소자의 온도 및 주파수영향

In this paper, with a view to study the impurity effect, Ge-Si-Te memory devices are investigated experimentally about the dependence of temperature and frequency. Conductivity depends upon temperature and frequency and it is some-what influenced by heat treatment. With increasing frequency, conductivity has a tendency to be independent of temperature. We found that switching time and threshold voltage are reduced by it.