• YAKHAK HOEJI
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• v.42 no.6
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• pp.627-633
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• 1998

Impurity profiling analysis of methamphetamine seized in Korea was investigated for the evidential and intelligent purpose. Samples were extracted with ethylacetate which contai ns internal standard of dioctylsebacate under basic condition and extracts were analyzed by GC-FID. Ephedrine, chloroephedrine & 1,2-dimethyl-3-phenylaziridine were identified impurities in illicit methamphetamine by GC-MS. These impurities revealed that most of abused methamphetamine in Korea were synthesized from ephedrine as a starting material. For the classification of samples. firstly, 24 impurity peaks were selected after inspection of every peak in 50 samples as the specific markers of impurities. Secondly, corresponding peak retention time and area ratio to the internal standard were calculated and database was created with values of 24 peaks by in-house program. Finally, cluster analysis was attempted with the resultant profiles using the STAR plot, which was based on the Euclidian distance for evaluating similarity among samples. A total of 76 samples were divided into 8 different groups within 90% statistical similarity and inter-batch samples showed similar impurity patterns by this procedure. In conclusion, the analysis of impurities is a suitable index for estimation the common or different origin of methamphetamine sample.

• Nuclear Engineering and Technology
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• v.30 no.1
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• pp.17-25
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• 1998

Transport of carbon and boron impurity ions parallel to magnetic field lines in the tokamak SOL (scrape-off layer) is numerically investigated for a one-dimensional steady state. The spatial distributions of density and velocity of the impurity ions in a steady state are calculated by finite difference method for a single-fluid model. The calculated results show that among forces acting on SOL particles thermal force produced tv plasma temperature gradient is a principal force determining the feature of impurity distribution profiles in the tokamak edge. However, strong collisional friction forces appearing dominant in front of the diverter plate restrain impurity ion flows due to temperature gradients from moving toward the midplane. Consequently, the stagnation point develops in the impurity flow by these two forces near the diverter region, in which ion flows change their directions. Impurity ions turn out to be accumulated at the stagnation points, where peaked profiles of highly-ionized state ions are relatively predominant over those of low-ionized state ions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.6
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• pp.346-353
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• 2000

In this paper, we developed 3 dimensional Surface Charge Method which could calculate electric fields inside GIS with a small void in solid insulator or with a metal impurity. We find a metal impurity makes much more non-uniform electric field distribution inside GIS than a small void. We also find electric field is much more increased when a metal impurity is close to solid insulator surface at high voltage conductor.

• Analytical Science and Technology
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• v.15 no.1
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• pp.87-90
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• 2002

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 ％ in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2117-2119
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• 1999

In this paper, the electric fields inside GIS with metal impurity is analysed by the use of 3 dimensional Surface Charge Method. We find the metal impurity makes electric field distribution inside GIS non-uniform and causes breakdown of $SF_6$ gas in GIS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1078-1084
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• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.51 no.11
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• pp.585-590
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• 2002

In this paper, the 3 dimensional surface charge method is applied to calculate electric fields distribution inside a general and an optimal model of GIS with a metal impurity and a void respectively. We know the optimal model can reduce tangential electric fields at solid insulator surface to 70% of the general model and infulence fields distribution near a metal impurity. Meanwhile, we find the optimal model does not decrease field distribution inside a void in the insulator.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.18-22
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• 2005

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.370-374
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• 1988

This paper is concerned with the investigation of the impurity redistribution process in a two step diffusion. In integrated circuit technology, two step boron diffusion involving a deposition step followed by a drive-in step in commonly encounted. The drive-in process is usually performed in oxidizing atmosphere resulting in redistribution of impurity (boron) within the semiconductor. This paper proposes a new numerical analysis method; Bounary Element Method to determine impurity profile at the arbitrary point in domain by its coordinate and boundary value.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.