Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1988.07a
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- Pages.370-374
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- 1988
Two-dimensional Redistribution of Impurity considering Thermal Oxidation in silicon using BEM
BEM을 이용하여 열산화를 고려한 실리콘 내에서 불순물의 2차원 재분포에 관한 연구
- Kim, Hun (Dept. of Electronic Eng. Graduate School of Chung-Ang University) ;
- Hwang, Ho-Jung (Dept. of Electronic Eng. Graduate School of Chung-Ang University)
- Published : 1988.07.01
Abstract
This paper is concerned with the investigation of the impurity redistribution process in a two step diffusion. In integrated circuit technology, two step boron diffusion involving a deposition step followed by a drive-in step in commonly encounted. The drive-in process is usually performed in oxidizing atmosphere resulting in redistribution of impurity (boron) within the semiconductor. This paper proposes a new numerical analysis method; Bounary Element Method to determine impurity profile at the arbitrary point in domain by its coordinate and boundary value.
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