• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.565-566
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• 2006

In this work, We study electrical characterization of $HfO_2$/Hf/Si films grown by Atomic Layer Deposition(ALD). Through AES(Auger Electron Spectroscopy), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf metal layer in our structure effectively suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• Structural Engineering and Mechanics
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• v.23 no.2
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• pp.163-175
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• 2006

In this paper, the dynamic response of a piezoelectric layer with a penny-shaped crack is investigated. The piezoelectric layer is subjected to an axisymmetrical action of both mechanical and electrical impacts. Two kinds of crack surface conditions, i.e., electrically impermeable and electrically permeable, are adopted. Based upon integral transform technique, the crack boundary value problem is reduced to a system of Fredholm integral equations in the Laplace transform domain. By making use of numerical Laplace inversion the time-dependent dynamic stress and electric displacement intensity factors are obtained, and the dynamic energy release rate is further derived. Numerical results are plotted to show the effects of both the piezoelectric layer thickness and the electrical impact loadings on the dynamic fracture behaviors of the crack tips.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.253-255
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• 2009

박막태양전지에서 빛을 처음 받아들이는 p-layer는 전체적인 태양전지 특성에 큰 영향을 준다. 본 논문에서는 p-layer의 gas flow rate를 가변하여 증착한 P-I-N cell을 통해 DIV를 측정하고 분석하였다. 더불어 gas flow rate에 따른 p-layer의 특성변화를 토대로 시뮬레이션을 진행하여 실제 소자와 비교하여 보았다. simulation da와 experimental data를 비교해보면 전체적으로 유사한 경향성을 보이며 saturation current는 큰 차이를 보이지 않았으나 ideality factor와 series resistance에서 real device가 비교적 큰 값을 나타내는 것을 볼 수 있었다. 본 연구는 simulation data를 기반으로 real device를 제작하는데 큰 도움이 될 것이다.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.6-8
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• 2002

In order to prepare magnetic recording layer with a good quality crystallographic characteristic. We prepared $Co_{77}Cr_{20}Ta_3$ layer for perpendicular magnetic recording media on slide glass substrate by Two-Step Methode. The thickness of magnetic layer was fixed 100 nm and buffer layer were varied from 10 to 50 nm, and input current was varied from 0.2[A] to 0.5[A]. The surface morphology and crystal orientation of the CoCrTa films were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting buffer layer.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.17-20
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• 2018

IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.23-27
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• 2022

In this study, we investigate organic-inorganic halide perovskite solar cells with a vacuum thermal evaporated hole transporting layer (NPB/MoO_3-x). By replacing solution process based Spiro-MeOTAD with vacuum thermal evaporation based NPB/MoO_3-x, a thin hole transporting layer was implemented. In addition, parasitic absorption that may occur during the doping process was eliminated by excluding solution process doping. In a solar cell with a thin vacuum thermal evaporated hole transporting layer, the short-circuit current density (Jsc) increased to 23.93 mA/cm², resulting in the highest power converstion efficiency (PCE) at 18.76%. Considering these results, it is essential to control the thickness of hole transporting layer located at the top in solar cell configuration.

• Journal of applied mathematics & informatics
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• v.40 no.1_2
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• pp.99-115
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• 2022

The problem of Benard double diffusive Marangoni convection is investigated in a horizontally infinite composite layer system consisting of a two component fluid layer above a porous layer saturated with the same fluid, using Darcy-Brinkman model with constant heat sources/sink in both the layers. The lower boundary of the porous region is rigid and upper boundary of the fluid region is free with Marangoni effects. The system of ordinary differential equations obtained after normal mode analysis is solved in closed form for the eigenvalue, thermal Marangoni number for two types of thermal boundary combinations, Type (I) Adiabatic-Adiabatic and Type (II) Adiabatic -Isothermal. The corresponding two thermal Marangoni numbers are obtained and the essence of the different parameters on non-Darcy-Benard double diffusive Marangoni convection are investigated in detail.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.