Emission Properties of Electroluminescent Device having Emitting Layer Dried at Different Temperature

발광층의 건조온도에 따른 전계발광소자의 발광특성

  • 서부완 (전남대학교 전기공학과) ;
  • 구할본 (전남대학교 전기공학과)
  • Published : 1999.11.01

Abstract

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

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