• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• Smart Structures and Systems
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• 제24권1호
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• pp.111-125
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• 2019

Metallic shape memory alloys present fascinating physical properties such as their super-elastic behavior in austenite phase, which can be exploited for providing a structure with both a self-centering capability and an increased ductility. More or less accurate numerical models have been introduced to model their behavior along the last 25 years. This is the reason for which the literature is rich of suggestions/proposals on how to implement this material in devices for passive and semi-active control. Nevertheless, the thermo-mechanical coupling characterizing the first-order martensite phase transformation process results in several macroscopic features affecting the alloy performance. In particular, the effects of day-night and winter-summer temperature excursions require special attention. This aspect might imply that the deployment of some devices should be restricted to indoor solutions. A further aspect is the dependence of the behavior from the geometry one adopts. Two fundamental lacks of symmetry should also be carefully considered when implementing a SMA-based application: the behavior in tension is different from that in compression, and the heating is easy and fast whereas the cooling is not. This manuscript focuses on the passive devices recently proposed in the literature for civil engineering applications. Based on the challenges above identified, their actual feasibility is investigated in detail and their long term performance is discussed with reference to their fatigue life. A few available semi-active solutions are also considered.

• Current Applied Physics
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• 제18권12호
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• pp.1486-1491
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• 2018

In recent years, mica has been successfully used as a substrate for the growth of flexible epitaxial ferroelectric oxide thin films. Here, we systematically investigated the flexibility of mica in terms of its thickness, repeated bending/unbending, extremely hot/cold conditions, and successive thermal cycling. A $20-{\mu}m-thick$ sheet of mica is flexible even up to the bending radius of 5 mm, and it is durable for 20,000 cycles of up- and down-bending. In addition, the mica shows flexibility at 10 and 773 K, and thermal cycling stability for the temperature variation of ca. 400 K. Compared with the widely used flexible polyimide, mica has a significantly higher Young's modulus (ca. 5.4 GPa) and negligible hysteresis in the force-displacement curve. These results show that mica should be a suitable substrate for piezoelectric energy-harvesting applications of ferroelectric oxide thin films at extremely low and high temperatures.

• Earthquakes and Structures
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• 제22권6호
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• pp.597-608
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• 2022

One of the most important parameters affecting nonlinearsoil-structure interaction, especially rocking foundation, is the vertical factor of safety (F.S_v). In this research, the effect of F.S_v on the behavior of rocking foundations was experimentally investigated. A set of slow, cyclic, horizontal loading tests was conducted on elastic SDOF structures with different shallow foundations. Vertical bearing capacity tests also were conducted to determine the F.S_v more precisely. Furthermore, 10% silt was mixed with the dry sand at a 5% moisture content to reach the minimum apparent cohesion. The results of the vertical bearing capacity tests showed that the bearing capacity coefficients (N_c and N_γ) were influenced by the scaling effect. The results of horizontal cyclic loading tests showed that the trend of increase in capacity was substantially related to the source of nonlinearity and it varied by changing F.S_v. Stiffness degradation was found to occur in the final cycles of loading. The results indicated that the moment capacity and damping ratio of the system in models with lower F.S_v values depended on soil specifications such cohesiveness or non-cohesiveness and were not just a function of F.S_v.

• 한국정보통신학회논문지
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• 제9권5호
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• pp.1066-1072
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• 2005

비휘발성 메모리 소자로의 응용의 관점에서, sol-gel 방법으로 PLZT(x/30/70) 박막을 제작하여 La 농도에 따른 구조적 및 전기적 특성을 조사하였다 La 농도가 0 에서 $10mol\%$ 로 증가함에 따라, PLZT 박막의 유전상수는 450 에서 600 으로 증가된 반면, 유전손실과 100kV/cm에서 측정한 누설전류밀도는 각각 0.075 에서 0.025 로 $5.83{\times}10^{-7}$에서 $1.38{\times}10^{-7}A/cm^2$ 으로 감소되었다. 175kV/cm 에서 측정한 PLZT 박막의 이력곡선을 측정한 결과, La 농도가 0 에서 $10mol\%$ 로 증가함에 따라 박막의 잔류분극과 항전계는 각각 20.8에서 $10.5{\mu}C/cm^2,$ 54.48 에서 32.12kV/cm 로 감소되었다. PLZT 박막에 ${\pm}5V$ 의 사각펄스를 $10^9$ 회 인가하여 피로특성을 측정한 결과, La 농도가 증가함에 따라 초기 분극값의 감소가 64 에서 $40\%$ 로 개선됨을 확인할 수 있었다.

• 대한전자공학회논문지SD
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• 제39권3호
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• pp.1-8
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• 2002

Sol-gel 법으로 제작한 (Pb/sub 0.9/La/sub 0.1/)Ti/sub 0.975/O₃(PLT (10)) 박막의 구조적 및 전기적 특성에 대한 과잉 Pb 첨가량이 미치는 영향을 조사하였다. DTA 와 X-선 회절분석 결과, 과잉 Pb 첨가량이 7.5 에서 15㏖%로 증가함에 따라, PLT(10) 박막의 결정화 온도는 감소하였으며, (100) 우선 배향성은 증가하였다. 또한, PLT(10) 박막의 과잉 Pb 첨가량에 따른 전기적 특성을 조사한 결과, 12.5㏖% 의 과잉 Pb 를 첨가한 박막이 가장 우수한 전기적 특성을 나타내었다. 이때, 비유전률과 유전손실은 각각 350 과 0.02 이었고, 100㎸/㎝ 에서 누설전류밀도는 1.27×10/sup -6/A/㎠ 이었다. 또한 이력곡선으로부터 구한 잔류분극(p) 과 항전계 (Ec) 는 각각 6.36μC/㎠ 와 58.7㎸/㎝ 이었으며, ±5V 의 사각펄스를 10/sup 9/회 인가한 후에도 잔류 분극값이 초기값의 약 15% 감소하는 비교적 우수한 피로특성을 나타내었다. 이상의 결과로부터, 과잉 Pb 첨가량이 12.5㏖% 인 PLT(10) 박막은 비휘발성 메모리에 응용될 수 있는 매우 유망한 재료임을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.307.2-307.2
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• 2016

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

• Smart Structures and Systems
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• 제13권3호
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• pp.353-374
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• 2014

Recent studies were dedicated to the realization of measurements on stay-cable samples of different geometry and static conditions as available at several facilities. The elaboration of the acquired data showed a a satisfactory efficacy of the dampers made of NiTi wires in smoothing the cable oscillations. A further attempt to investigate the applicability of the achieved results beyond the specific case-studies represented by the tested cable-stayed samples is herein pursued. Comparative studies are carried out by varying the diameter of the NiTi wire so that similar measurements can be taken also from laboratory steel cables of reduced size. Details of the preparation of the Ni-Ti wires are discussed with particular attention being paid to the suppression of the creep phenomenon. The resulting shape of the hysteretic cycle differs according to the wire diameter, which affects the order of the fitting polynomial to be used when trying to retrieve the experimental results by numerical analyses. For a NiTi wire of given diameter, an estimate of the amount of dissipated energy per cycle is given at low levels of maximum strain, which correspond to a fatigue fracture life of the order of millions of cycles. The dissipative capability is affected by both the temperature and the cycling frequency at which the tests are performed. Such effects are quantified and an ageing process is proposed in order to extend the working temperature range of the damper to cold weathers typical of the winter season in Northern Europe and Canada. A procedure for the simulation of the shape memory alloy behavior in lengthy cables by finite element analysis is eventually outlined.

• 한국진공학회지
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• 제11권4호
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• pp.230-234
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• 2002

고온 급속 열처리를 행한 $LiNbO_3Si$/(100) 구조를 가지고 여러 가지 전극을 사용하여 금속/강유전체/반도체 커패시터를 제작하였으며, 제작한 커패시터의 비휘발성 메모리 응용 가능성을 확인하였다. MFS 커패시터의 C-V 특성 곡선에서는 LiNbO$_3$박막의 강유전성으로 인한 히스테리시스 특성이 관측되었으며, 1 MHz C-V 특성 곡선의 축적 영역에서 산출한 비유전율은 약 25 이었다. Pt 전극을 사용하여 제작한 커패시터에서는 인가 전계 500 kV/cm 범위에서 $1\times10^{-8}$ A/cm 이하의 우수한 누설전류 특성이 나타났다. midgap 부근에서의 계면 준위 밀도는 약 $10^{11}\textrm{cm}^2$.eV 이었으며, 잔류분극 값은 약 1.2 $\muC/\textrm{cm}^2$ 였다. Pt 전극과 A1 전극 모두 500 kHz 주파수의 바이폴러 펄스를 인가하면서 측정한 피로 특성에서 $10^{10}$ cycle 까지 측정된 잔류 분극 값이 초기 값과 같았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.