• Analytical Science and Technology
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• v.14 no.3
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• pp.274-285
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• 2001

In this study, the thermal desorption-cryofocusing-gas chromatographic(TD-C-GC) method was developed for determination of volatile organic compounds(VOCs) in ambient air and was applied at the municipal solid waste landfill sites. On-column cryofocusing was possible only with a 100 ml dewars bottle in TD-C-GC method with a stainless steel column. However, high operating pressure was needed for purging VOCs from the absorbent trap, which was able to solve by pressure programming with a electric pressure controller. By using both pressure and temperature programming brought increasing of resolution power in on-column cryofocusing method, but the high pressure caused a leakage of sample tube with repeated use. A loop cryofocusing devise was also developed and compared with the direct on-column method. In loop cryofocusing method, VOCs were concentrated on a 0.8mm i.d. loop which is located between the injector and separation column by using liquid nitrogen. In order to purge VOCs from the absorbent trap, only 0.4 psi of pressure was need in the loop cryofocusing method. Dual detection system was applied for the analysis of VOCs; a FID was used for hydrocarbons and a FPD was used for sulfur-containing compounds. Qualitative analysis was done by on-column cryofocusing GC-MS system. Among the large number of VOCs, toluene was the most abundant. Hydrogen sulfide, dimethyl sulfide, carbon disulfide, dimethyl disulfide and methyl propyl disulfide were detected at landfill site by FPD.

• Journal of environmental and Sanitary engineering
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• v.14 no.4
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• pp.117-123
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• 1999

The analytical instrument method was applied to analyze malodorous sulfur compounds emitted from industrial fields. Six factories and two sites which release malodorous substances into ambient air were selected to determine the level of hydrogen sulfide($H_2S$), methylmercaptan(MeSH), dimethyl sulfide($Me_2S$), and dimethyl disulfide($Me_2S_2$) using automated thermal desorption system (STD400) and GC-FPD in summer and fall seasons of 1999. The Air sampler for ATD400 uses a small pump to draw sample and a mass flow controller to adjust sample amount without using a dilution apparatus. The trap temperature of ATD400 reached to $-80^{\circ}$ by supplying liquid nitrogen and $H_2S$ can be analyzed under this condition. The recovery rates of $H_2S$, MeSH, $Me_2S$, and $Me_2S_2$ of odorous sulfur compounds standard were shown 98.2%, 93.6%, 98.2%, 99.4% respectively. The concentrations of $Me_2S$ at outside boundary of G market, L factory, and J factory were 0.018ppm, 0.021ppm, 0.032ppm in summer, respectively. The concentration of $H_2S$ at Nanjido landfill was 1.167ppm in summer, but that of $H_2S$ was not detected in fall because of soil covering. The concentration of H2S and $Me_2S_2$ at inside of Chonggye stream were 0.564ppm and 1.045ppm in summer, while those of H2S and Me2S2 were 0.285ppm and 0.465ppm in fall, respectively.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.7
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• pp.689-696
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• 2010

The Because of its high thermal efficiency, the direct injection (DI) diesel engine has emerged as a promising potential candidate in the field of transportation. However, the amount of nitrogen oxides ($NO_x$) increases in the local high-temperature regions and that of particulate matter (PM) increases in the diffusion flame region during diesel combustion. In the de-$NO_x$ system the Lean $NO_x$ Trap (LNT) catalyst is used, which absorbs $NO_x$ under lean exhaust gas conditions and releases it in rich conditions. This technology can provide a high $NO_x$-conversion efficiency, but the right amount of reducing agent should be supplied to the catalytic converter at the right time. In this research, the emission characteristics of a diesel engine equipped with a micro-reformer that acts as a reductants-supplying equipment were investigated using an LNT system, and the effects of the exhaust-gas temperature were also studied.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2006.05a
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• pp.262-262
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• 2006

The characteristics of Brown gas was experimentally studied in view of efficiency and flame propagation. For this study, the Brown gas stack with 7 cells was manufactured following the Brown gas related patents and reports. All measuring equipments were re-tested and calibrated by Korea Laboratory Accreditation Scheme (KOLAS) certified laboratories. Since the amount of produced gas is most crucial in determining the efficiency, we adopted two gas collecting methods such as bottle trap method and wet gas meter method. The energy efficiency of our own fabricated stack was measured to be 75%, which is comparable to general alkaline water electrolysis efficiency. In order to analyze the flame propagation characteristics of Brown gas, we measured the flame propagation pressure, velocity, and shape by using strain type pressure sensor, optical sensor, and high speed camera in conjunction with Schliren system, respectively. From the experimental results, it was found that the flame propagation behavior of Brown gas was almost the same as that of hydrogen and oxygen mixture gas in 2:1 molar ratio. Moreover, from the high speed camera analysis, we concluded that Brown gas flame exhibits explosion behavior as does mixture gas ($H_{2}:O_{2}=2:1$).

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.49-55
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• 1996

Hydrogenated amorphous carbon(a-C:H) films were fabricated by the low-frequency (60Hz) glow discharge of the mixture of methane and hydrogen, and their electrical properties were investigated. We observed that a-C:H films show the persistent photoconductivity(PPC) by illumination of heat-filtered while light for a few seconds. The PPC was about 10 times larger than the annealed dark conductivity. The samples clearly showed metastable characteristics. With increasing illumination times from 1 to 100 min, the annealing activation energy of the PPC was about 0.39eV. The annealing temperature at which the PPC disappeared increasing from $100^{\circ}C$ to $130^{\circ}C$. Illumination longer than 80 min leads to the formation of ${\pi}$ defects and to the decrease of PPC. From these results, we tentatively propose that the states in the ${\pi}$ band act as deep trap centers generating the metastabilities.

• ETRI Journal
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• v.31 no.6
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Journal of Electrochemical Science and Technology
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• v.2 no.4
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• pp.187-192
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• 2011

Photoelectrochemical performances of ZnO electrodes are enhanced by coupling with cobalt-based catalyst (CoPi) in phosphate electrolyte (pH 7). For this study, hexagonal pillar-shaped ZnO nanorods are grown on ZnO electrodes through a chemical bath deposition, onto which CoPi is deposited with different photodeposition times (10-30 min). A scanning electron microscopic study indicates that CoPi deposition does not induce any change of ZnO morphology and an energy-dispersive X-ray spectroscopic analysis shows that inorganic phosphate ions (Pi) exist on ZnO surface. Bare ZnO electrodes generate the current of ca. $0.36mA/cm^2$ at a bias potential of 0.5 V vs. SCE, whereas ZnO/CoPi (deposited for 10 min) has ca. 50%-enhanced current ($0.54mW/cm^2$) under irradiation of AM 1.5G-light ($400mW/cm^2$). The excess loading of CoPi on ZnO results in decrease of photocurrents as compared to bare ZnO likely due to limited electrolyte access to ZnO and/or CoPi-mediated recombination of photogenerated charge carriers. The primary role of CoPi is speculated to trap the photogenerated holes and thereby oxidize water into molecular oxygen via an intervalency cycle among Co(II), Co(III), and Co(IV).

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• Journal of IKEEE
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• v.23 no.2
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• pp.704-709
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• 2019

In this paper, the electrical characteristics of tunneling field effect transistor(TFET) was studied for different annealing conditions. The TFET samples annealed using hydrogen forming gas(4 %) and Deuterium($D_2$) forming gas(4 %). All the measurements were conducted in noise shielded environment. The results show that subthreshold slope(SS) decreased by 33 mV/dec after annealing process compared to before annealing. Under various temperature range, the noise is improved by average of 31.2 % for 10 atm Deuterium gas at $V_G=3V$ condition. It is also noticed that, post metal annealing with $D_2$ gas reduces the noise by average of 30.7 % at $I_D=100nA$ condition.

• Journal of Electrochemical Science and Technology
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• v.14 no.4
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• pp.388-396
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• 2023

Photoelectrochemical (PEC) water splitting is a vital source of clean and sustainable hydrogen energy. Moreover, the large-scale H₂ production is currently necessary, while long-term stability and high PEC activity still remain important issues. In this study, a GaN-based photoelectrode was modified by an additional NH₃ treatment (900℃ for 10 min) and its PEC behavior was monitored. The bare GaN exhibited a highly crystalline wurtzite structure with the (002) plane and the optical bandgap was approximately 3.2 eV. In comparison, the NH₃-treated GaN film exhibited slightly reduced crystallinity and a small improvement in light absorption, resulting from the lattice stress or cracks induced by the excessive N supply. The minor surface nanotexturing created more surface area, providing electroactive reacting sites. From the surface XPS analysis, the formation of an N-Ga-O phase on the surface region of the GaN film was confirmed, which suppressed the charge recombination process and the positive shift of E_FB. Therefore, these effects boosted the PEC activity of the NH₃-treated GaN film, with J values of approximately 0.35 and 0.78 mA·cm^-2 at 0.0 and 1.23 V_RHE, respectively, and an onset potential (V_on) of -0.24 V_RHE. In addition, there was an approximate 50% improvement in the J value within the highly applied potential region with a positive shift of V_on. This result could be explained by the increased nanotexturing on the surface structure, the newly formed defect/trap states correlated to the positive V_on shift, and the formation of a GaO_xN_1-x phase, which partially blocked the charge recombination reaction.