• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.38-47
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• 2023

Three dimensional (3D) packaging is a next-generation packaging technology that vertically stacks chips such as memory devices. The necessity of 3D packaging is driven by the increasing demand for smaller, high-performance electronic devices (HPC, AI, HBM). Also, it facilitates innovative applications across another fields. With growing demand for high-performance devices, companies of semiconductor fields are trying advanced packaging techniques, including 2.5D and 3D packaging, MR-MUF, and hybrid bonding. These techniques are essential for achieving higher chip integration, but challenges in mass production and fine-pitch bump connectivity persist. Advanced bonding technologies are important for advancing the semiconductor industry. In this review, it was described 3D packaging technologies for chip integration including mass reflow, thermal compression bonding, laser assisted bonding, hybrid bonding.

• Journal of Information Display
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• v.10 no.4
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• pp.149-157
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• 2009

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

• Journal of KIISE:Computer Systems and Theory
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• v.36 no.6
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• pp.451-462
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• 2009

Recently, there are many active studies to enhance low I/O performance of hard disk device. The studies on the hardware make good progress whereas those of the system software to enhance I/O performance may not support the hardware performance due to its poor progress. In this paper, we propose a new method of prefetching n-blocks into the flash memory. The proposed method consists of three steps: (1)analyzing the pattern of read requests in block units; (2)determining the number of blocks prefetched to flash memory; (3)replacing blocks according to block replacement policy. The proposed method can reduce the latency time of hard disk and optimize the power consumption of the computer system. Experimental results show that the proposed dynamic n-block method provides better average response time than that of the existing AMP(Adaptive multi stream prefetching) method by 9.05% and reduces the average power consumption than that of the existing AMP method by 11.11%.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1696-1704
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• 2008

The conventional hard disk has been the dominant database storage system for over 25 years. Recently, hybrid systems which incorporate the advantages of flash memory into the conventional hard disks are considered to be the next dominant storage systems. Their features are satisfying the requirements like enhanced data I/O, energy consumption and reduced boot time, and they are sufficient to hybrid storage systems as major database storages. However, we need to improve traditional index management schemes based on B-Tree due to the relatively slow characteristics of hard disk operations, as compared to flashmemory. In order to achieve this goal, we propose a new index management scheme called FNC-Tree. FNC-Tree-based index management enhanced search and update performance by caching data objects in unused free area of flash leaf nodes to reduce slow hard disk I/Os in index access processes. Based on the results of the performance evaluation, we conclude that our scheme outperforms the traditional index management schemes.

• The KIPS Transactions:PartD
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• v.17D no.6
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• pp.383-394
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• 2010

Flash memory based SSDs are currently being considered as a promising candidate for replacing hard disks due to several superior features such as shorter access time, lower power consumption and better shock resistance. However, SSDs have different characteristics from hard disk such as difference of unit and time for read, write and erase operation and impossibility for over-writing. Because of these reasons, SSDs have disadvantages on hard disk based systems, so FTL(Flash Translation Layer) is designed to increase SSDs' efficiency. In this paper, we propose an advanced logical address mapping method for increasing SSDs' performance, which is named HAMM(Hybrid Address Mapping Method). HAMM addresses drawbacks of previous block-mapping method and super-block-mapping method and takes advantages of them. We experimented our method on our own SSDs simulator. In the experiments, we confirmed that HAMM uses storage area more efficiently than super-block-mapping method, given the same buffer size. In addition, HAMM used smaller memory than block-mapping method to construct mapping table, demonstrating almost same performance.

• The Journal of the Korea Contents Association
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• v.8 no.1
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• pp.290-299
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• 2008

We propose the query optimization technique using query classification in hybrid spatial DBMS. In our approach, user queries should to be classified into three types: memory query, disk query, and hybrid query. Specialty, In the hybrid query processing, the query predicate is divided by comparison between materialized view creating conditions and user query conditions. Then, the deductions of the classified queries' cost formula are used for the query optimization. The optimization is mainly done by the selection algorithm of the smallest cost data access path. Our approach improves the performance of hybrid spatial DBMS than traditional disk-based DBMS by $20%{\sim}50%$.

• IEMEK Journal of Embedded Systems and Applications
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• v.11 no.2
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• pp.87-95
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• 2016

Nonvolatile memory (NVM) is being considered as an alternative of traditional memory devices such as SRAM and DRAM, which suffer from various limitations due to the technology scaling of modern integrated circuits. Although NVMs have advantages including nonvolatility, low leakage current, and high density, their inferior write performance in terms of energy and endurance becomes a major challenge to the successful design of NVM-based memory systems. In order to overcome the aforementioned drawback of the NVM, extensive research is required to develop energy- and endurance-aware optimization techniques for NVM-based memory systems. However, researchers have experienced difficulty in finding a suitable simulation tool to prototype and evaluate new NVM optimization schemes because existing simulation tools do not consider the feature of NVM devices. In this article, we introduce a NVM-based cache simulator to support rapid prototyping and evaluation of NVM-based caches, as well as energy- and endurance-aware NVM cache optimization schemes. We demonstrate that the proposed NVM cache simulator can easily prototype PRAM cache and PRAM+STT-RAM hybrid cache as well as evaluate various write traffic reduction schemes and wear leveling schemes.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.2
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• pp.127-134
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• 2019

With the advancement of IT technology, the amount of data generated has been growing exponentially every year. As an alternative to this, research on distributed systems and in-memory based big data processing schemes has been actively underway. The processing power of traditional big data processing schemes enables big data to be processed as fast as the number of nodes and memory capacity increases. However, the increase in the number of nodes inevitably raises the frequency of failures in a big data infrastructure environment, and infrastructure management points and infrastructure operating costs also increase accordingly. In addition, the increase in memory capacity raises infrastructure costs for a node configuration. Therefore, this paper proposes an in-memory-based hybrid big data processing scheme for improve the big data processing rate. The proposed scheme reduces the number of nodes compared to traditional big data processing schemes based on distributed systems by adding a combiner step to a distributed system processing scheme and applying an in-memory based processing technology at that step. It decreases the big data processing time by approximately 22%. In the future, realistic performance evaluation in a big data infrastructure environment consisting of more nodes will be required for practical verification of the proposed scheme.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.