• Title/Summary/Keyword: hybrid main memory

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Hybrid in-memory storage for cloud infrastructure

  • Kim, Dae Won;Kim, Sun Wook;Oh, Soo Cheol
    • Journal of Internet Computing and Services
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    • v.22 no.5
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    • pp.57-67
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    • 2021
  • Modern cloud computing is rapidly changing from traditional hypervisor-based virtual machines to container-based cloud-native environments. Due to limitations in I/O performance required for both virtual machines and containers, the use of high-speed storage (SSD, NVMe, etc.) is increasing, and in-memory computing using main memory is also emerging. Running a virtual environment on main memory gives better performance compared to other storage arrays. However, RAM used as main memory is expensive and due to its volatile characteristics, data is lost when the system goes down. Therefore, additional work is required to run the virtual environment in main memory. In this paper, we propose a hybrid in-memory storage that combines a block storage such as a high-speed SSD with main memory to safely operate virtual machines and containers on main memory. In addition, the proposed storage showed 6 times faster write speed and 42 times faster read operation compared to regular disks for virtual machines, and showed the average 12% improvement of container's performance tests.

Page Replacement Algorithm for Improving Performance of Hybrid Main Memory (하이브리드 메인 메모리의 성능 향상을 위한 페이지 교체 기법)

  • Lee, Minhoe;Kang, Dong Hyun;Kim, Junghoon;Eom, Young Ik
    • KIISE Transactions on Computing Practices
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    • v.21 no.1
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    • pp.88-93
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    • 2015
  • In modern computer systems, DRAM is commonly used as main memory due to its low read/write latency and high endurance. However, DRAM is volatile memory that requires periodic power supply (i.e., memory refresh) to sustain the data stored in it. On the other hand, PCM is a promising candidate for replacement of DRAM because it is non-volatile memory, which could sustain the stored data without memory refresh. PCM is also available for byte-addressable access and in-place update. However, PCM is unsuitable for using main memory of a computer system because it has two limitations: high read/write latency and low endurance. To take the advantage of both DRAM and PCM, a hybrid main memory, which consists of DRAM and PCM, has been suggested and actively studied. In this paper, we propose a novel page replacement algorithm for hybrid main memory. To cope with the weaknesses of PCM, our scheme focuses on reducing the number of PCM writes in the hybrid main memory. Experimental results shows that our proposed page replacement algorithm reduces the number of PCM writes by up to 80.5% compared with the other page replacement algorithms.

High Performance PCM&DRAM Hybrid Memory System (고성능 PCM&DRAM 하이브리드 메모리 시스템)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • IEMEK Journal of Embedded Systems and Applications
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    • v.11 no.2
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    • pp.117-123
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    • 2016
  • In general, PCM (Phase Change Memory) is unsuitable as a main memory because it has limitations: high read/write latency and low endurance. However, the DRAM&PCM hybrid memory with the same level is one of the effective structures for a next generation main memory because it can utilize an advantage of both DRAM and PCM. Therefore, it needs an effective page management method for exploiting each memory characteristics dynamically and adaptively. So we aim reducing an access time and write count of PCM by using an effective page replacement. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the PCM access count by around 60% and the PCM write count by 42% given the same PCM size, compared with Clock-DWF algorithm.

Seismic response of steel braced frames equipped with shape memory alloy-based hybrid devices

  • Salari, Neda;Asgarian, Behrouz
    • Structural Engineering and Mechanics
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    • v.53 no.5
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    • pp.1031-1049
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    • 2015
  • This paper highlights the role of innovative vibration control system based on two promising properties in a parallel configuration. Hybrid device consists of two main components; recentering wires of shape memory alloy (SMA) and steel pipe section as an energy dissipater element. This approach concentrates damage in the steel pipe and prevents the main structural members from yielding. By regulation of the main adjustable design parameter, an optimum performance of the device is obtained. The effectiveness of the device in passive control of structures is evaluated through nonlinear time history analyses of a five-story steel frame with and without the hybrid device. Comparing the results proves that the hybrid device has a considerable potential to mitigate the residual drift ratio, peak absolute acceleration and peak interstory drift of the structure.

Recency and Frequency based Page Management on Hybrid Main Memory

  • Kim, Sungho;Kwak, Jong Wook
    • Journal of the Korea Society of Computer and Information
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    • v.23 no.3
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    • pp.1-8
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    • 2018
  • In this paper, we propose a new page replacement policy using recency and frequency on hybrid main memory. The proposal has two features. First, when a page fault occurs in the main memory, the proposal allocates it to DRAM, regardless of operation types such as read or write. The page allocated by the page fault is likely to be high probability of re-reference in the near future. Our allocation can reduce the frequency of write operations in PCM. Second, if the write operations are frequently performed on pages of PCM, the pages are migrated from PCM to DRAM. Otherwise, the pages are maintained in PCM, to reduce the number of unnecessary page migrations from PCM. In our experiments, the proposal reduced the number of page migrations from PCM about 32.12% on average and reduced the number of write operations in PCM about 44.64% on average, compared to CLOCK-DWF. Moreover, the proposal reduced the energy consumption about 15.61%, and 3.04%, compared to other page replacement policies.

Hybrid Main Memory Systems Using Next Generation Memories Based on their Access Characteristics (차세대 메모리의 접근 특성에 기반한 하이브리드 메인 메모리 시스템)

  • Kim, Hyojeen;Noh, Sam H.
    • Journal of KIISE
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    • v.42 no.2
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    • pp.183-189
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    • 2015
  • Recently, computer systems have encountered difficulties in making further progress due to the technical limitations of DRAM based main memory technologies. This has motivated the development of next generation memory technologies that have high density and non-volatility. However, these new memory technologies also have their own intrinsic limitations, making it difficult for them to currently be used as main memory. In order to overcome these problems, we propose a hybrid main memory system, namely HyMN, which utilizes the merits of next generation memory technologies by combining two types of memory: Write-Affable RAM(WAM) and Read-Affable RAM(ReAM). In so doing, we analyze the appropriate WAM size for HyMN, at which we can avoid the performance degradation. Further, we show that the execution time performance of HyMN, which provides an additional benefit of durability against unexpected blackouts, is almost comparable to legacy DRAM systems under normal operations.

Dynamical Polynomial Regression Prefetcher for DRAM-PCM Hybrid Main Memory (DRAM-PCM 하이브리드 메인 메모리에 대한 동적 다항식 회귀 프리페처)

  • Zhang, Mengzhao;Kim, Jung-Geun;Kim, Shin-Dug
    • Proceedings of the Korea Information Processing Society Conference
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    • 2020.11a
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    • pp.20-23
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    • 2020
  • This research is to design an effective prefetching method required for DRAM-PCM hybrid main memory systems especially used for big data applications and massive-scale computing environment. Conventional prefetchers perform well with regular memory access patterns. However, workloads such as graph processing show extremely irregular memory access characteristics and thus could not be prefetched accurately. Therefore, this research proposes an efficient dynamical prefetching algorithm based on the regression method. We have designed an intelligent prefetch engine that can identify the characteristics of the memory access sequences. It can perform regular, linear regression or polynomial regression predictive analysis based on the memory access sequences' characteristics, and dynamically determine the number of pages required for prefetching. Besides, we also present a DRAM-PCM hybrid memory structure, which can reduce the energy cost and solve the conventional DRAM memory system's thermal problem. Experiment result shows that the performance has increased by 40%, compared with the conventional DRAM memory structure.

Dynamic Data Migration in Hybrid Main Memories for In-Memory Big Data Storage

  • Mai, Hai Thanh;Park, Kyoung Hyun;Lee, Hun Soon;Kim, Chang Soo;Lee, Miyoung;Hur, Sung Jin
    • ETRI Journal
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    • v.36 no.6
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    • pp.988-998
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    • 2014
  • For memory-based big data storage, using hybrid memories consisting of both dynamic random-access memory (DRAM) and non-volatile random-access memories (NVRAMs) is a promising approach. DRAM supports low access time but consumes much energy, whereas NVRAMs have high access time but do not need energy to retain data. In this paper, we propose a new data migration method that can dynamically move data pages into the most appropriate memories to exploit their strengths and alleviate their weaknesses. We predict the access frequency values of the data pages and then measure comprehensively the gains and costs of each placement choice based on these predicted values. Next, we compute the potential benefits of all choices for each candidate page to make page migration decisions. Extensive experiments show that our method improves over the existing ones the access response time by as much as a factor of four, with similar rates of energy consumption.

A Page Placement Scheme of Smartphone Memory with Hybrid Memory (이기종 메모리로 구성된 스마트폰 메모리의 페이지 배치 기법)

  • Lee, Soyoon;Bahn, Hyokyung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.20 no.1
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    • pp.149-153
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    • 2020
  • This paper presents a new page placement policy for DRAM/NVRAM hybrid main memory in smartphones. Unlike previous studies on hybrid memory systems, this paper performs the placement of pages based on the offline analysis of memory access behaviors as smartphone's memory accesses are skewed to a certain address ranges, which is consistent regardless of smartphone applications, specially for write operations. Thus, we aim at reducing the write traffic to NVRAM by the offline analysis results. Experimental results show that the proposed policy reduces the write traffic to NVRAM by 61% on average without performance degradations.