• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.366-369
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• 2002

At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

• Laser Solutions
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• v.15 no.4
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• pp.6-11
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• 2012

Laser beam can be either absorbed or scattered in porous ceramic material and its optical characteristics need to be understood. Electro-magnetic multiphysics software was used to simulate and understand the actual scattering phenomena in porous materials. 785nm femtosecond laser was irradiated on the surface of ceramic material and strong scattering occurred in drilling process. The computer results showed the scattering and absorption phenomena of Aluminum oxide were a mixture of dielectric and metallic material. The computer simulation showed the laser beam was almost extinct at the aspect rate of 5 approximately.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.53-58
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• 2018

Since the scaling-down of IC devices has been reached to their physical limitations, several innovative packaging technologies such as 3D packaging, embedded packaging, and fan-out wafer level packaging (FOWLP) are actively studied. In this study the fabrication of organic-inorganic dielectric material was evaluated for the use of multi-structured redistribution layers (RDL) in FOWLP. Compared to current organic dielectrics such as PI or PBO an organic-inorganic hybrid dielectric called polysilsesquioxane (PSSQ) can improve mechanical, thermal, and electrical stabilities. polysilsesquioxane has also an excellent advantage of simultaneous curing and patterning through UV exposure. The polysilsesquioxane samples were fabricated by spin-coating on 6-inch Si wafer followed by pre-baking and UV exposure. With the 10 minutes of UV exposure polysilsesquioxane was fully cured and showed $2{\mu}m$ line-pattern formation. And the dielectric constant of cured polysilsesquioxane dielectrics was ranged from 2.0 to 2.4. It has been demonstrated that polysilsesquioxane dielectric can be patterned and cured by UV exposure alone without a high temperature curing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.160-160
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• 2009

In recent years, the merging of nanomaterials and nano-technology into electro-optic (EO) device technology such as liquid crystal displays (LCDs) has attracted much attention because of their unique electro- and magneto-optic properties and novel display applications. One example of hybrid LC-inorganic systems is semiconductor nanorods added to LC for their strong reorientation effect and tunable refractive index. Doping of nanoparticles in LC or polymers can lead to changes in performance characteristics such as electro-optical, dielectric, memory effect, phase behavior, etc. Due to the tunability of LCDs with mixed inorganic materials, low voltage operation of a LC system can also be achieved using the significant electro-optical effect achieved through suspension of ferroelectric nanoparticles in NLC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.578-581
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• 2004

유전체가 삽입된 공동 공진기는 유전체에 대부분의 전자계가 집속되어 있기 때문에, 도체 손실이 매우 적고 높은 Q값과 온도 안정성이 뛰어나다. 동일한 주파수에서 동작하는 다른 필터에 비해 상대적으로 작기 때문에 소형화에도 적합하다. 본 논문에서는 유전체가 삽입된 공동 공진기의 전자기 분포와 특성을 수치해석과 HFSS(High Frequency Structure Simulator)를 이용하여 분석하였고 이 결과를 토대로 HFSS를 이용한 순차적 방법을 도입하여 4-pole 이중모드 대역통과 필터를 설계, 제작하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.132-132
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• 2003

Second-order nonlinear optical(NLO) materials have been extensively studied for applications in photonic devices, such as frequency doubling and electro-optical(EO) modulation, because of their large optical nonlinearity, excellent processibility, low dielectric constant, and high laser damage thresholds. The poling behaviour of NLO chromophore in organic/inorganic matrixes showed the randomization of poled NLO chromophore in the absence of poling Held. The liquid crystal molecules in a droplet showed a long-range orientational order along a director. Therefore, liquid crystal effects on poling behaviour of NLO chromophore dispersed in organically modified inorganic sol-gel materials were investigated. Using sol-gel process for the development of NLO material has received increasing attention, Organically modifked inorganic NLO sol-Eel materials are obtained via incorporation of the organic NLO active chromophore into an alkoxysilane based inorganic network. One of the most important thing in this works was that tetraethoxysilane(TEOS) and methyltrimathoxysilane(HTMS) were used as precursor followed by hydrolysis and condensation without using any acidic catalyst during the process. The NLO chromophores in the liquid crystal nanodomains were well mixed with I/O hybrid matrix, deposited on transparent ITO-coated glasses. The poling behaviour of liquid crystal effects of NLO chromophore dispersed in I/O hybrid matrix were investigated by UV-vis spectroscopy. Size distribution and morphology of the NLO chromophores doped in the liquid crystal nanodomains dispersed in I/O hybrid matrix were investigated by SEM.