• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.387-390
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.50.1-50.1
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.59-59
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• 2000

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.172-175
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• 2009

n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1427-1429
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature($T_w$). The films deposited at high $T_w$ of 2000$^{\circ}C$ have superior crystalline properties; average lateral grain sizes are larger than $1{\mu}m$ and there at·e no vertical grain boundaries. The surface of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and textured surface are believed to give high current density when applied to solar cells. However, the poly-si films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.25.1-25.1
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.17-27
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• 2000

This paper presents deposition and characterization of hydrogenated microcrystalline silicon (${\mu}c$ -Si:H) films on low cost glass substrate by Hot Wire CVD(HWCVD). The HWCVD ${\mu}c$ -Si:H films had deposition rates ranging from 2${\AA}$/sec to 35${\AA}$/sec with the variations of preparation conditions, which was 10 times higher than that of the films obtained from the conventional PECVD method. From the Raman spectroscopy, the prepared silicon films were found to be composed of the mixture of crystalline and amorphous phases. The crystalline volume fraction and average crystallite size, obtained from the Raman To mode peak near 520cm$^{-1}$, were 37-63% and 6-10 nm, respectively. The conductivity activation energy($E_a$) of the ${\mu}c$ -Si:H films, representing the difference of conduction band and Fermi level in an intrinsic semiconductors, increased from 0.22eV to 0.68eV with increasing pressure from 30mTorr to 300mTorr. The increase of $E_a$ with pressure indicates that the deposited films have properties close to intrinsic semiconductors, which is also proved with low dark conductivity of the ${\mu}c$ -Si:H deposited at 300mTorr. The tungsten concentration incorporated into films was about $6{\times}10^{16}atoms/cm^3$ in the samples prepared at wire temperature of 1800$^{\circ}C$.

• The monthly packaging world
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• s.334
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• pp.86-89
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• 2021