Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Fast and Low Temperature Deposition of Polycrystalline Silicon Films by Hot Wire CVD

Hot Wire CVD를 이용한 다결정 Si 박막의 고속 저온 증착

  • Lee, Jeong-Chul (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kang, Ki-Whan (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kim, Seok-Ki (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Yoon, Kyung-Hoon (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Song, Jin-Soo (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Park, I-Jun (Photovoltaic Research Team, Korea Institute of Energy Research)
  • 이정철 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 강기환 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 김석기 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 윤경훈 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 송진수 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 박이준 (한국에너지기술연구원, 태양광발전연구팀)
  • Published : 2001.07.18
Download PDF
⟨ Previous Next ⟩

Abstract

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature($T_w$). The films deposited at high $T_w$ of 2000$^{\circ}C$ have superior crystalline properties; average lateral grain sizes are larger than $1{\mu}m$ and there at·e no vertical grain boundaries. The surface of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and textured surface are believed to give high current density when applied to solar cells. However, the poly-si films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

Keywords