• Title/Summary/Keyword: hole-transporting material

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Extreme baking effect of interlayer on PLED's performance

  • Kim, Mu-Gyeom;Kim, Sang-Yeol;Lee, Tae-Woo;Park, Sang-Hun;Park, Jong-Jin;Pu, Lyong-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1775-1778
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    • 2006
  • Through baking process on an interlayer, known as hole transporting layer, varying baking temperature up to 300 degree, which is considered as extremely high for polymer light emitting device (PLED) system, we found interesting relationship between packing density and morphology affecting device performance. Granular morphology shows that as temperature increases, grain size is getting smaller to pack closely and make interlayer harden. Such denser interlayer has temperature dependency of its own mobility, even without clear evidence of degradation of material itself. Its fact proven in a single film also reflects on multilayered PLED's performance like IVL, efficiency, lifetime. It's found that, especially, to enhance lifetime is related with thermal stability of interlayer and its mobility dependency to meet better charge balance. Therefore, it gives us understanding not only baking effect of interlayer, but also material & device designing guide to enhance lifetime.

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Emission Characteristics of Polymer Blue Organic Light Emitting Devices on the Plastic Substrates (플라스틱 기판을 이용한 고분자 청색 유기발광다이오드의 발광 특성)

  • Jung, Jae-Hoon;Moon, Dae-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.9
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    • pp.682-685
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    • 2013
  • We have fabricated blue phosphorescent organic light-emitting devices (OLEDs) on a plastic substrate. The solution coated poly (9-vinylcarbazole) (PVK) host doped with Bis (3,5-difluoro-2-(2-pyridyl)phenyl_(2-carboxypyridyl)irdium(III) (FIrPic) guest molecules was used as an hole transporting emission layer. The device structure was ITO/PVK:FIrpic (50 nm, xwt%)/TAZ 50 nm)/LiF (0.5 nm)/Al (100 nm). The concentration of FIrpic molecule was varied from 1 wt% to 10 wt%. The OLED on plastic substrate exhibited maximum current efficiency of 18 cd/A with 5 wt% FIrpic molecules were doped into the PVK layer.

Inverted CdSe/ZnS Quantum Dots Light-Emitting Diode Using Low-Work Function Organic Material Polythylenimine Ethoylated

  • Kim, HongHee;Son, DongIck;Jin, ChangKyu;Hwang, DoKyung;Yoo, Tae-Hee;Park, CheolMin;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.246.1-246.1
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    • 2014
  • Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

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A New Alternative Hole-transporting Layer to PEDOT:PSS for Realizing Highly Efficient All Solution-processable PLEDs

  • Kang, Beom-Goo;Kang, Hong-Kyu;Lee, Kwang-Hee;Lee, Chang-Lyoul;Lee, Jae-Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.362-363
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    • 2012
  • A new cross-linkable polymer, cross-linked d-PBAB, which has the triphenylamine as the hole transporting moiety and ethynyl group as the thermal cross-linker is firstly synthesized by the combination of anionic polymerization and deprotection process. The thermal cross-linking reaction was performed at $240^{\circ}C$ for 50 min and cross-linked d-PBAB layer showed smooth surface and is not soluble at organic solvent under spin-coating of emitting layer (EML). The solution-processed PLED which was fabricated with cross-linked d-PBAB as HTL showed approximately two times higher Lmax and four times higher LEmax than those obtained from PLED with PEDOT:PSS as the HTL. These result is ascribed to better ability of cross-linked d-PBAB to block electrons and to prevent exciton-quenching than those of PEDOT : PSS at the EML interface. This results strongly suggested that cross-linked d-PBAB can be a promising material to replace conventional PEDOT : PSS. It can be suspected that PLEDwith cross-linked d-PBAB would show longer lifetime compared with that of PLED with PEDOT : PSS, and thus further studies are under investigation.

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A Studies on the Electrical and Optical Characterization of Organic Electroluminescent Devices using $Eu(TTA)_3(phen)$ (Europium complex를 이용한 유기 전기 발광 소자의 전기적 및 광학적 특성에 관한 연구)

  • Lee, Myung-Ho;Pyo, Sang-Woo;Lee, Han-Sung;Kim, Young-Kwan;Kim, Jung-Soo
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1373-1376
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    • 1998
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

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Luminance Characteristics of a Novel Red-Light-Emitting Device Based on Znq2 and Dye

  • Cho, min-Jeong;Park, Wan-Ji;Lee, Jeong-Gu;Lim, In-Su;Lim, Kee-Joe;Kim, Hyun-Hoo
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.2
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    • pp.16-19
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    • 2002
  • In this study, a novel red emitting organic electroluminescent (EL) device was fabricated with the bis(8-oxyquinolino)zinc II (Znq2) doped dye as an emitting layer. The Znq2 was synthesized successfully from zinc chloride (ZnC1$_2$) as an initial material. Then, we fabricated the red organic EL device with a dye (DCJTB) doped and inserted Znq2 between emission layer and cathode for increasing EL efficiency. The hole transporting layer is a N,N'-diphenyl-N,N'-bis-(3-methylphenyl)-1,1'-diphenyl-4,4-diamine (TPD), and the host material of emission layer is Znq2. And the electrical and luminance characteristics of the device were measured. We found that the EL device with Znq2 inserting layer results in the increasing luminance efficiency.

High efficiency multiple quantum well device structure in red phosphorescent OLEDs

  • Park, Tae-Jin;Jeon, Woo-Sik;Jang, Jin;Pode, Ramchandra;Kwon, Jang-Hyuk
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.196-199
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    • 2009
  • We report the multiple quantum well (MQW) structure for highly efficient red phosphorescent OLEDs. Various triplet quantum well devices from a single well to five quantum wells are realized using a wide band-gap hole and electron transporting layers, narrow band-gap host and dopant material, and charge control layers (CCL). The maximum external quantum efficiency of 14.8 % with a two quantum well device structure is obtained, which is the highest value among the red phosphorescent OLEDs using same dopant.

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Solution processed doping to the polymer hole transporting layer for phosphorescent organic light-emitting diodes (고분자 정공수송층에 용액 공정 도핑법을 적용한 인광 유기전기발광소자)

  • Sung, Baeksang;Lee, Jangwon;Lee, Seung-Hoon;Yoo, Jae-Min;Lee, Jae-Hyun;Lee, Jonghee
    • Journal of IKEEE
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    • v.24 no.3
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    • pp.699-705
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    • 2020
  • In this study, a facial way to enhance the electrical properties of organic light-emitting diodes (OLEDs) via the solution process doping method based on the poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl) diphenylamine)] (TFB) as a hole transporting layer (HTL) is demonstrated. In the TFB solution of the hole transport material, 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) was doped by 3 wt% to improve the electrical properties of the HTL. According, the OLED with HAT-CN doped TFB showed the increased current density and luminance at the same driving voltage on behalf of the improved conductivity of HTL, and the reduced turn-on voltage from 13 V to 9 V. Furthermore, the maximum external quantum efficiency was dramatically increased three times from 3.6 to 10.8 % compared to the reference device without appling doping methode.

Luminance Characteristics of Organic Electroluminescent Devices Based on Znq12 by Heating (열처리된 Znq2에 기초한 유기 EL소자의 발광특성)

  • Jo, Seong-Ryeol;Jeong, Eun-Sil;Park, Su-Gil;Jeong, Pyeong-Jin
    • Korean Journal of Materials Research
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    • v.9 no.6
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    • pp.564-568
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    • 1999
  • The 8-hydroxyquinoline Zinc(Znq2) were prepared successfully from zinc chloride and zinc acetate as two kinds of starting material. The organic electroluminescent devices(ELDs) were fabricated by the structure of ITO/TPD/Znq2/Al with N-N'-diphenyl-N-N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) which acts hole trasporting layer and bis(8-oxyquinolino) zinc(II)(Znq2) which acts as emission and electron transporting layer. EL efficiency of Znq2 prepared by heating was investigated. The 570nm of main emission peak which is yellowich green was investigated by photo luminesence(PL) and this results shows that electro luminescence(EL) is from Znq2. The V-J curve shows that carrier injection were investigated from 4V. Maximum luminance and luminance efficiency were 1600cd/$\m^2$, 0.9lm/W. From this results, the Znq2 can be one of the useful organic EL material.

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Formation and Current-voltage Characteristics of Molecularly-ordered 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine film (분자배열된 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine 박막 제조와 전기적 특성)

  • Kang, Do Soon;Choe, Youngson
    • Applied Chemistry for Engineering
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    • v.18 no.5
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    • pp.506-510
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    • 2007
  • Vacuum deposited 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA), a widely-used semiconductor material, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in OLEDs and a well-stacked 1-TNATA layer leads to stable and high efficiency devices by reducing the carrier injection barrier at the interface between the ITO anode and hole transport layers. According to Raman spectra, thermal annealing after deposition as well as electromagnetic field treatment during deposition lead to closer stacking of 1-TNATA molecules and resulted in molecular ordering. By thermal annealing at about $110^{\circ}C$, an increase in current flow through the film by over 25% was observed. Molecularly-ordered 1-TNATA films played an important role in achieving higher luminance efficiency as well as higher power efficiency of the multi-layered organic EL devices in the present work. Electromagnetic field treatment during deposition was less effective compared to thermal annealing