• 제목/요약/키워드: hole transport

검색결과 339건 처리시간 0.026초

Theoretical Studies on 2-Hexylthieno[3,2-b]thiophene End-Capped Oligomers for Organic Semiconductor Materials

  • Park, Young-Hee;Kim, Yun-Hi;Kwon, Soon-Ki;Koo, In-Sun;Yang, Ki-Yull
    • Bulletin of the Korean Chemical Society
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    • 제33권4호
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    • pp.1213-1219
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    • 2012
  • The reorganization energy and the spectroscopic properties of 2,6-bis(5'-hexyl-thieno[3,2-b]thiophene-2'- yl)naphthalene (DH-TNT) and 2,6-bis(5'-hexyl-thieno[3,2-b]thiophene-2'-yl)anthracene (DH-TAT), which are composed of an acene unit and alkylated thienothiophene on both sides, as organic materials for display devices were calculated and the results were compared with experimental values. The lower reorganization energy of the DH-TAT over the DH-TNT calculated by the density functional theory is attributed to a smaller vibrational distortion because of the heavier building block of DH-TAT, and it shows a good field effect performance over the DH-TNT. The calculated spectra and the other spectroscopic characteristic of the compounds are well consistent with those of observed results.

정공 수송층과 발광층의 두께 변화에 따른 주파수의 임피던스 특성 (Impedance Properties of Frequency with the Thickness Variation of Hole Transport Layer and Emitting Layer)

  • 김원종;이영환;양재훈;이종용;심낙순;김태완;홍진웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.2040-2042
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    • 2005
  • ITO/N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine(TPD)/Tris(8-hydroxyquinolinato Aluminum $(Alq_3)/Al$ 구조에서 정공 수송층 TPD와 발광충 $Alq_3$를 각각 두께 변화에 따라 Agilent 4294A, Precision Impedance Analyzer를 이용하여 주파수에 의존하는 저항성 특성과 용량성 특성을 연구하였다. 측정 결과 주파수가 증가할수록 저항성 특성은 감소함을 보였고 용량성 특성은 감소하다가 다시 증가하는 특성을 보였다. TPD와 $Alq_3$의 두께가 각각 70[nm], 30[nm]일 때 저주파 영역에서는 가장 낮은 저항성 특성이 보이다가 고주파 영역에서는 가장 높은 특성을 확인하였다. 또한 용량성 특성은 저주파 영역에서는 가장 높은 특성이 보이다가 고주파영역에서 두께 변화에 상관없이 거의 일치함을 확인하였다.

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박막의 조성비율에 따른 유기태양전지의 효율성 연구 (A Study about the Efficiency of Organic Photovoltaic Device as a function of the Material Concentration)

  • 김승주;이동근;박재형;공수철;김원기;류상욱
    • 반도체디스플레이기술학회지
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    • 제8권3호
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    • pp.1-5
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    • 2009
  • In this study, we have shown the power conversion efficiency of organic thin film photovoltaic devices utilizing a conjugated polymer/fullerene bulk-hetero junction structure. We use MDMO-PPV(Poly[2-methoxy-5-(3,7-dimethyloctyloxy -1,4-phenylenevinylene) as an electron donor, PCBM([6,6]-Phenyl C61 butyric acid methyl ester) as an electron accepter, and PEDOT:PSS used as a HTL(Hole Transport Layer). We have fabricated OPV(Organic Photovoltaic) devices as a function of the MDMO-PPV/PCBM concentration from 1:1 to 1:5. The electrical characteristics of the fabricated devices were investigated by means of I-V, P-V, F·F(Fill Factor) and PCE(power conversion efficiency). The power conversion efficiency was gradually increased until 1:4 ratio, also the highest efficiency of 0.4996% was obtained at the ratio.

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전면 유기발광 다이오드 기능층 캐핑레이어 적용에 따른 효율상승에 관한 연구 (A Study on the Efficiency Effects of Capping Layer on the Top Emission Organic Light Emitting Diode)

  • 이동운;조의식;전용민;권상직
    • 반도체디스플레이기술학회지
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    • 제21권3호
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    • pp.119-124
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    • 2022
  • Top emission organic light-emitting diode (TEOLED) is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device (BEOLED). Unlike BEOLED, TEOLED contain semitransparent metal cathode and capping layer. Because there are many characteristics to consider just simple thickness change, optimizing organic thickness of TEOLED for microcavity is difficult. So, in this study, we optimized Device capping layer at unoptimized micro-cavity structure TEOLED device. And we compare only capping layer with unoptimized microcavity structure can overcome optimized micro-cavity structure device. We used previous our optimized micro-cavity structure to compare each other. As a result, it has been found that the efficiency can be obtained almost the same or higher only capping layer, which is stacked on top of the device and controls only the thickness and refractive index, without complicated structural calculations. This means that higher efficiencies can be obtained more easily in laboratories with limited organic materials or when optimizing new structures etc.

Electrical Characterization of Ultrathin Film Electrolytes for Micro-SOFCs

  • Shin, Eui-Chol;Ahn, Pyung-An;Jo, Jung-Mo;Noh, Ho-Sung;Hwang, Jaeyeon;Lee, Jong-Ho;Son, Ji-Won;Lee, Jong-Sook
    • 한국세라믹학회지
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    • 제49권5호
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    • pp.404-411
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    • 2012
  • The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

Survivability Analysis of MANET Routing Protocols under DOS Attacks

  • Abbas, Sohail;Haqdad, Muhammad;Khan, Muhammad Zahid;Rehman, Haseeb Ur;Khan, Ajab;Khan, Atta ur Rehman
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제14권9호
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    • pp.3639-3662
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    • 2020
  • The network capability to accomplish its functions in a timely fashion under failures and attacks is known as survivability. Ad hoc routing protocols have been studied and extended to various domains, such as Intelligent Transport Systems (ITSs), Unmanned Aerial Vehicles (UAVs), underwater acoustic networks, and Internet of Things (IoT) focusing on different aspects, such as security, QoS, energy. The existing solutions proposed in this domain incur substantial overhead and eventually become burden on the network, especially when there are fewer attacks or no attack at all. There is a need that the effectiveness of these routing protocols be analyzed in the presence of Denial of Service (DoS) attacks without any intrusion detection or prevention system. This will enable us to establish and identify the inherently stable routing protocols that are capable to survive longer in the presence of these attacks. This work presents a DoS attack case study to perform theoretical analysis of survivability on node and network level in the presence of DoS attacks. We evaluate the performance of reactive and proactive routing protocols and analyse their survivability. For experimentation, we use NS-2 simulator without detection or prevention capabilities. Results show that proactive protocols perform better in terms of throughput, overhead and packet drop.

전면 유기 발광 다이오드의 각도에 따른 발광 패턴 연구 (Angular dependence of emision pattern in top-emission organic light-emitting diodes)

  • 주현우;목랑균;김태완;장경욱;송민종;이호식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.277-278
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    • 2009
  • We have studied an angular dependence of emission pattern of top-emssion organic light-emitting diodes (TEOLED). Device structure is Al(100nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(2nm)/Ag(30nm). N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) and tris-(8-hydroxyquinoline) aluminium ($Alq_3$)were used as a hole transport layer and emission layer, respectively. Organic layers and cathode were thermally evaporated at $2\times10^{-5}$torr. The evaporation rate of the organic material was maintained to be $1.5\sim2.0{\AA}/s$, and that of metal layer to be $0.5\sim5{\AA}/s$. A transmittance of a cathode electrode(Al/Ag) in visible region is about 25~30%. In order to measure view-angle dependent intensity, electroluminenscence spectra of the device at each angle were integrated. Angle dependent emission spectra of the device do not show blue shift. Emission intensity of the device that the going straight characteristic is stronger the bottom-emission organic light-emitting diodes is shown.

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유기물층 두께변화에 따른 유기발광 소자의 전기적 및 광학적 특성 (Organic-layer thickness dependent electrical and electrical and optical properties of organic light-eitting diodes)

  • 안희철;주현우;나수환;한원근;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.27-28
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    • 2008
  • We have studied an organic layer-thickness dependent electrical and optical properties of organic light-emitting diodes in a device structure of ITO/TPD/$Alq_3$/LiF/Al. While a hole-transport layer thickness of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. Current-voltage-luminance characteristics of the devices show that there are typical rectifying behaviors, and the luminance reaches about $30,000cd/m^2$. Thickness-dependent current efficiency shows that there is a gradual increase of the efficiency as the total layer thickness increases. The efficiency becomes saturated to be about 10cd/A when the total thickness is above 140nm. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

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Extraction of Effective Carrier Velocity and Observation of Velocity Overshoot in Sub-40 nm MOSFETs

  • Kim, Jun-Soo;Lee, Jae-Hong;Yun, Yeo-Nam;Park, Byung-Gook;Lee, Jong-Duk;Shin, Hyung-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권2호
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    • pp.115-120
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    • 2008
  • Carrier velocity in the MOSFET channel is the main driving force for improved transistor performance with scaling. We report measurements of the drift velocity of electrons and holes in silicon inversion layers. A technique for extracting effective carrier velocity which is a more accurate extraction method based on the actual inversion charge measurement is used. This method gives more accurate result over the whole range of $V_{ds}$, because it does not assume a linear approximation to obtain the inversion charge and it does not limit the range of applicable $V_{ds}$. For a very short channel length device, the electron velocity overshoot is observed at room temperature in 37 nm MOSFETs while no hole velocity overshoot is observed down to 36 nm. The electron velocity of short channel device was found to be strongly dependent on the longitudinal field.

현장 열응답시험과 현장 대수성시험결과를 동시 분석 가능한 통합전산 Program에 관한 연구 (A Study on the Integrated Computer Program for the Multi Analysis of In-Situ Aquifer and Geothermal Response Test)

  • 한정상;한혁상;윤운상
    • 한국지열·수열에너지학회논문집
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    • 제4권1호
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    • pp.11-19
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    • 2008
  • Groundwater flow in confined aquifer and heat transport in underground geologic media are using same governing equation(line source) like well fuction. Therefore the conventional slope method using only later data obtained from in-situ thermal response test to determine the thermal conductivity of vertical geothermal heat exchanger(GHEX) is basically identical with one of Theis straight line method of aquifer test under artesian condition. In case that the pumping rate(Q, $m^3$/d) and drawdown(s,m) which are used for input data of existing hydrogeologic computer programs for aquifer test are replaced and converted to supplying heat energy per unit length of bore hole(Q/L,w/m or Kcal/h.m) and temperatures (T,$^{\circ}C$)measured at in and out-let of GHEX as in put data respectively, thermal conductivity around geothermal heat exchanger can be easily estimated without any special modification of the existing hydrogeologic computer program. Two numbers of time series temperature variation data obtained from in situ geothermal response test are analized using Theismethods(standard curve and straight line method) by using existing aquifer test program and conventional Slope method proposed by ASHRAE. The results show that thermal conductivity values estimated by two straight methods are identical and the difference of estimated values between standard curve methods and Slope method are also within acceptable ranges. In general,the thermal conductivity estimated from Theis straight linemethod gives more accurate value than the one of Slope method due to that Slope method uses only visual matching otherwise Theis method uses automatic curve matching estimation with reducing RSS.

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