• Title/Summary/Keyword: hole formation

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Horizon Run 5 Black Hole Populations and Pulsar Timing Array

  • Kim, Chunglee;Park, Hyo Sun;Kim, Juhan;Lommen, Andrea
    • The Bulletin of The Korean Astronomical Society
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    • v.46 no.2
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    • pp.45.2-45.2
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    • 2021
  • Merging of two supermassive black holes would generate gravitational waves that can be detected by the Pulsar Timing Array (PTA) in the nHz band. In order to assess the plausibility of GW detection with PTA and to develop the data analysis scheme, it is important to understand the underlying properties of black holes and black hole binaries. In this work, we present mass and redshift distributions of black hole mergers using the Horizon Run 5 (HR5) data and discuss their implications for GW detection. We find a general conjecture about the black hole merger tree is true with the Horizon Run 5. For example, a) relatively lighter black holes merge at higher redshifts and b) binary mergers do contribute to the formation of more massive black holes toward low redshifts. We also present our plan to use the black hole properties extracted from the HR5 data in order to generate simulated GW signals to be injected into actual PTA data analysis pipelines. Mass and distance obtained from the HR5 would be key ingredients to generate a more realistic PTA source data set.

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Role of Bar Structures in Galactic Nuclear Activities

  • Oh, Seul-Hee;Yi, Suk-Young K.;Oh, Kyu-Seok
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.1
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    • pp.60.2-60.2
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    • 2011
  • Galactic bars are supposed to be a channel of gas inflow to the galactic center and thus possibly help nuclear star-formation and AGN activities. However, previous studies based on small local samples did not agree with this expectation. We find it necessary to examine the expectation using a large sample and so investigate the effects of bar structures on galactic nuclear activities, based on the Sloan Digital Sky Survey (SDSS) DR7. We used 6,348 late-type galaxies brighter than Mr = -19.0 in the redshift range $0.01{\leq}z{\leq}0.05$. Late-type galaxies are visually classified into barred or unbarred galaxies using SDSS color composite images. We compare the fractions of galaxies showing star-formation and AGN activities among barred and unbarred galaxies as a function of optical color, stellar mass, and black-hole mass. We have found that bar enhances nuclear star-formation activity on galaxies having low stellar mass, and low black-hole mass. This effect is stronger in redder galaxies. In the case of AGN, bar effects are higher in intermediate-mass galaxies. Bars also have an effect on the strength(!) of the star-formation and AGN activity in our sample as well. Thus, it seems that nuclear activities are powered by gas inflow from galactic bar structures perhaps not always but under certain conditions.

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Fabrication of Through-hole Interconnect in Si Wafer for 3D Package (3D 패키지용 관통 전극 형성에 관한 연구)

  • Kim, Dae-Gon;Kim, Jong-Woong;Ha, Sang-Su;Jung, Jae-Pil;Shin, Young-Eui;Moon, Jeong-Hoon;Jung, Seung-Boo
    • Journal of Welding and Joining
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    • v.24 no.2
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    • pp.64-70
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    • 2006
  • The 3-dimensional (3D) chip stacking technology is a leading technology to realize a high density and high performance system in package (SiP). There are several kinds of methods for chip stacking, but the stacking and interconnection through Cu filled through-hole via is considered to be one of the most advanced stacking technologies. Therefore, we studied the optimum process of through-hole via formation and Cu filling process for Si wafer stacking. Through-hole via was formed with DRIE (Deep Reactive ion Etching) and Cu filling was realized with the electroplating method. The optimized conditions for the via formation were RE coil power of 200 W, etch/passivation cycle time of 6.5 : 6 s and SF6 : C4F8 gas flow rate of 260 : 100 sccm. The reverse pulsed current of 1.5 A/dm2 was the most favorable condition for the Cu electroplating in the via. The Cu filled Si wafer was chemically and mechanically polished (CMP) for the following flip chip bumping technology.

The Analysis of Thermal & Optical Properties in LED Package by the Formation of FR4 PCB (FR4 PCB의 Via hole 구성에 따른 LED 패키지의 열적 광학적 특성 분석)

  • Lee, Se-Il;Lee, Seung-Min;Yang, Jong-Kyung;Kim, Woo-Young;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1611_1612
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    • 2009
  • 접합온도의 증가는 PN 접합 부분에서 생성된 열이 외부로 원활하게 방출되는 것을 저하시키고, 칩 내부에 남은 열이 전자와 정공의 비발광 재결합을 증가시켜 LED의 신뢰성과 내구성에 큰 영향을 미친다. 본 논문에서는 PMS-50과 KEITHLEY 2430을 이용하여 FR4 PCB의 Via hole 구성에 따른 LED 패키지의 열적 광학적 특성을 분석하였다. Via hole 0.6 [mm]일 때 열 특성과 광 출력 특성이 가장 우수하였으며 Via hole 1.2 [mm]는 열 특성, 광 특성이 가장 떨어졌고, 열 특성은 곧바로 광 특성에 영향을 미치는 것을 알 수 있었다.

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High performance top-emitting OLEDs with copper iodide-doped hole injection layer

  • Lee, Jae-Hyun;Leem, Dong-Seok;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.492-495
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    • 2008
  • Efficient top-emitting organic light-emitting diodes were fabricated using copper iodide (CuI) doped NPB as a p-doped hole injection layer to improve hole injection from a silver bottom electrode. The enhanced hole injection is originated from the formation of the charge transfer complex between CuI and NPB. The devices result in high efficiency of 69 cd/A with almost Lambertian emission pattern.

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Evaluation of Punching Process Variables Influencing Micro Via-hole Quality of LTCC Green Sheet (LTCC 기판의 미세 비아홀 펀칭 중 공정 변수의 영향 평가)

  • Baek S. W.;Rhim S. H.;Oh S. I.
    • Transactions of Materials Processing
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    • v.14 no.3 s.75
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    • pp.277-281
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    • 2005
  • LTCC(Low temperature co-fired ceramic) is being recognized as a significant packaging material of electrical devices for the advantages such as relatively low temperature being needed for process, low conductor resistance and high printing resolution. In the process of LTCC electrical devices, the punched via-hole quality is one of the most important factors on the performance of the device. However, its mechanism is very complicated and optimization of the process seems difficult. In this paper, to clarify the process, via-hole punching experiments were carried out and the punched holes were examined in terms of their burr formation. The effects of thickness of PET sheet, ceramic sheet and punch-to- die clearance on via-hole quality were also discussed. Optimum process conditions are proposed and a factor $\kappa$ is introduced to express effect of the process variables.

Fabrication of Ultra Small Size Hole Array on Thin Metal Foil (초미세 금속 박판 홀 어레이 가공)

  • Rhim S. H.;Son Y. K.;Oh S. I.
    • Transactions of Materials Processing
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    • v.15 no.1 s.82
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    • pp.9-14
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    • 2006
  • In the present research, the simultaneous punching of ultra small size hole of $2\~10\;{\mu}m$ in diameter on flat rolled thin metal foils was conducted with elastic polymer punch. Workpiece used in the present investigation were the rolled pure copper of $3{\mu}m$ in thickness and CP titanium of 1.5fm in thickness. The metal foils were punched with the dies and arrays of circular and rectangular holes were made. The process set-up is similar to that of the flexible rubber pad farming or Guerin process. Arrays of holes were punched successfully in one step forming. The punched holes were examined in terms of their dimensions. The effects of the wafer die hole dimension and heat treatment of the workpiece on ultra small size hole formation of the thin foil were discussed. The process condition such as proper die shape, pressure, pressure rate and diameter-thickness ratio (d/t) were also discussed. The results in this paper show that the present method can be successfully applied to the fabrication of ultra small size hole away in a one step operation.

The Effects of Impingement Hole Arrangements on Heat Transfer of an Impingement/Effusion Cooling System (충돌제트/유출냉각기법에서 분사판의 홀배열이 열전달에 미치는 영향)

  • Choe, Jong-Hyeon;Lee, Dong-Ho;Jo, Hyeong-Hui
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.26 no.1
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    • pp.101-109
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    • 2002
  • Two perforated plates are used to investigate local heat/mass transfer characteristics in an impingement/effusion cooling system. A naphthalene sublimation method is conducted to determine the local heat/mass transfer coefficients on the upward facing surface of the effusion plate. Two plates are placed in parallel position with gap distances of 1, 2, 4 and 6 times of effusion hole diameter. The effects of hole arrangements of the plates are studied fur staggered, square, and hexagonal arrays. The experiments are conducted at Reynolds number of 10,000 based on the effusion hole diameter. The results show that the smaller hole size in the staggered array has the higher transfer coefficients on the stagnation region due to the formation of higher momentum flows through the impingement holes. In the square array, heat/mass transfer on the target plate is more uniform as the number of impingement holes increases. High and uniform heat/mass transfer coefficients are obtained for the hexagonal array.

Analysis of Thermal Properties in LED Package by Via-hole and Dimension of FR4 PCB (FR4 PCB면적과 Via-hole이 LED패키지에 미치는 열적 특성 분석)

  • Kim, Sung-Hyun;Lee, Se-Il;Yang, Jong-Kyung;Park, Dae-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.234-239
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    • 2011
  • In this study, the heat transfer capability have been improved by using via-holes in FR4 PCB, when the LED lighting is designed to solve the thermal problem. The thermal resistance and junction temperature were measured by changing the dimension of FR4 PCB and size of via hole. As a result, when the dimension was increased initially, the thermal resistance and junction temperature was decreased rapidly, the ones was stabilized after the dimension of 200 $[mm^2]$. Also, the light output was improved up to maximum 17% by formation of via-hole and expansion of dimension in FR4 PCB. Therefore, the thermal resistance and junction temperature could be improved by expansion of PCB dimension and configuration of via-hole ability.