• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.63-66
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• 2003

In this paper, the electrical characteristics of single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of poly backseat was researched. The oxide quality was examined through capacitance-voltage characteristics, and besides, it will be describe the capacitance-voltage characteristics of the single oxide layer by semiconductor device simulation.

• Journal of Surface Science and Engineering
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• v.54 no.5
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.124-128
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• 2005

To produce a highly sensitive uncooled microbolometer, the development of a high-performance thermometric material is essential. In this work, amorphous vanadium-tungsten oxide was developed as a thermometric material at a low temperature of $300^{\circ}C$, and the microbolometer, coupled with the material, was designed and fabricated using surface micromachining technology. The vanadium-tungsten oxide showed good properties for application to the microbolometer, Such as a high temperature coefficient of resistance of over -4.0 $\%$/K and good compatibility with the surface micromachining and integrated circuit fabrication process due to its low fabrication temperature. As a result, the uncooled microbolometer could be fabricated with high detectivity over $1.0\;{\times}\;10^9\;cmHz^{1/2}/W$ at a bias current of $7.5\;{\mu}A$ and a chopper frequency of 10-20 Hz

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.347-351
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• 2015

To study the characteristics of ZTO, which is made using a target mixed $ZnO:SnO_2=1:1$, the ZnO and $SnO_2$ were analyzed using PL, XRD patterns, and electrical properties. Resulting characteristics were compared with the electrical characteristics of ZnO, $SnO_2$, and ZTO. The electrical characteristics of ZTO were found to improve with increasing of the annealing temperature due to the high degree of crystal structures at high temperature. The crystal structure of $SnO_2$ was also found to increase with increasing temperatures. So, the structure of ZTO was found to be affected by the annealing temperature and the molecules of $SnO_2$; the optical property of ZTO was similar to that of ZnO. Among the ZTO films, ZTO annealed at the highest temperature showed the highest capacitance and Schottky contact.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.59-63
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• 2002

This paper reports on the fabrication process and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragms with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.21 ~ 1.097 mV/V.kgf/$\textrm{cm}^2$ in temperature ranges of 25~ $200^{\circ}C$ and a maximum non-linearity is 0.43 %FS.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.110-114
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• 2020

In this paper, a heat pump using a Peltier device was developed for heat dissipation in a sealed electric box. The heat pump was designed with a cooling fin attached to both sides of the Peltier device, and a fan was mounted on the cooling fin on the hot side to increase the efficiency. The heat dissipation efficiency could be improved by directly connecting the electronic component having high heat to the cooling fin using a heat conducting wire. The fabricated heat pump was designed to operate only in the temperature range set by the temperature control system to improve the problem of high power consumption of the Peltier element.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.507-511
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• 2024

Various process modifications have been used to minimize SiO₂ gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.

• Ceramist
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• v.21 no.1
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• pp.44-54
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• 2018

Oxide semiconductor has been spotlighted as a channel material of TFTs in AMLCD as an alternative to Si, due to high mobility ( > $5cm^2/Vs$). It is also one of the strong candidates for TFTs in AMOLED because of high bias stability at amorphous phase. Beyond the advantages mentioned above, oxide semiconductor has many strengths such as transparency, low fabrication temperature and relatively low fabrication cost. For those reasons, the application of oxide semiconductor is not limited to display but can be extended to new types of electronics, for example, transient electronics for human implantable devices. From this context, oxide materials that have been used as semiconductor and insulator at transient electronics are investigated respectively, and conductor and substrate candidates are also explained, since transient electronics require systematic consideration beyond individual oxide films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.4
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• pp.290-294
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• 2002

This study is object to semiconductor cavity block production technology using CAD/CAM. Semiconductor packaging is require to the high intensity, high temperature and good metals. That raw metals name is ASP23 and high price. This results are propose to one direction of semiconductor cavity block production technology.