• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.155.2-155.2
• /
• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.427-430
• /
• 2001

We prepared 10cm-diameter Si(100)/500 $\AA$-Si$_3$N$_4$/Si(100) wafer Pairs adopting 500 $\AA$ -thick Si$_3$N$_4$layer as insulating layer between single crystal Si wafers. Si3N, is superior to conventional SiO$_2$ in insulating. We premated a p-type(100) Si wafer and 500 $\AA$ -thick LPCVD Si$_3$N$_4$∥Si (100) wafer in a class 100 clean room. The cremated wafers are separated in two groups. One group is treated to have hydrophobic surface and the other to have hydrophilic. We employed a FLA(fast linear annealing) bonder to enhance the bond strength of cremated wafers at the scan velocity of 0.1mm/sec with varying the heat input at the range of 400~1125W. We measured bonded area using a infrared camera and bonding strength by the razor blade crack opening method. We used high resolution transmission electron microscopy(HRTEM) to probe cross sectional view of bonded wafers. The bonded area of two groups was about 75%. The bonding strength of samples which have hydrophobic surface increased with heat input up to 1577mJ/$m^2$ However, bonding strength of samples which have hydrophilic surface was above 2000mJ/$m^2$regardless of heat input. The HRTEM results showed that the hydrophilic samples have about 25 $\AA$ -thick SiO layer between Si and Si$_3$N$_4$/Si and that maybe lead to increase of bonding strength.

• Korean Journal of Materials Research
• /
• v.20 no.6
• /
• pp.289-293
• /
• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• Korean Journal of Materials Research
• /
• v.9 no.11
• /
• pp.1129-1136
• /
• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Journal of the Korean Society of Marine Environment & Safety
• /
• v.27 no.1
• /
• pp.179-186
• /
• 2021

In this study, we attempted to comparatively analyze the structural characteristics of soot generated from marine engines to review the possibility of recycling crankcase soot by classifying it as exhaust soot and crankcase soot. The annealing procedure was performed in an argon gas atmosphere at 2,000℃ and 2,700℃, and Raman spectroscopy and High-Resolution Transmission Electron Microscopy(HRTEM) were used to analyze the structural properties of the samples. Furthermore, digital image processing techniques were utilized to quantitatively analyze the acquired HRTEM images. The Raman analysis demonstrated a relatively high G/D ratio in the exhaust soot and annealing conditions at 2,700℃. In the HRTEM images, both soot were able to identify similar forms of graphite nanostructures, but there were limitations in that they could not quantitatively derive differences in the degree of graphite depending on the type of soot and annealing temperature. Thus, digital image processing quantitatively analyzed the length and tortuosity of the fringe of the HRTEM image, which is consistent with the Raman analysis. This meant that the exhaust soot had a more graphite structure than the crankcase soot, and that annealing at a higher temperature improved the graphite structure. This study confirmed that both the crankcase soot and exhaust soot can be recycled as a graphite materials.

• Journal of Powder Materials
• /
• v.28 no.4
• /
• pp.293-300
• /
• 2021

We investigate the effect of phosphorous content on the microstructure and magnetic properties of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) nanocrystalline soft magnetic alloys. The simultaneous addition of Cu and P to nanocrystalline alloys reportedly decreases the nanocrystalline size significantly, to 10-20 nm. In the P-containing nanocrystalline alloy, P atoms are distributed in an amorphous residual matrix, which suppresses grain growth, increases permeability, and decreases coercivity. In this study, nanocrystalline ribbons with a composition of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) are fabricated by rapid quenching melt-spinning and thermal annealing. It is demonstrated that the addition of a small amount of P to the alloy improves the glass-forming ability and increases the resistance to undesirable Fe_x(B,P) crystallization. Among the alloys investigated in this work, an Fe_83.2Si₅B₁₀P₁Cu_0.8 nanocrystalline ribbon annealed at 460℃ exhibits excellent soft-magnetic properties including low coercivity, low core loss, and high saturation magnetization. The uniform nanocrystallization of the Fe_83.2Si₅B₁₀P₁Cu_0.8 alloy is confirmed by high-resolution transmission electron microscopy analysis.

• Journal of the Korean Vacuum Society
• /
• v.17 no.6
• /
• pp.528-537
• /
• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.4
• /
• pp.167-172
• /
• 2013

Titanium dioxides nanoparticles coated aluminum oxide powders were fabricated by pulsed laser deposition (PLD) with Nd : YAG laser at 266 nm. The Pulse laser energy is 100 mJ/pulse. During the irradiation of the focused laser on the $TiO_2$ target, Ar gas is supplied into the chamber. The gas pressure is varied in a range of $1{\times}10^{-2}$ to 100 Pa. Titanium dioxides nanoparticles deposited aluminum oxide powders were characterized by using energy dispersive X-ray spectroscopy (EDX), high resolution transmission electron microscopy (HR-TEM), in order to understand the effect of Ar background gas on surface morphology and properties of the powders. The coated $TiO_2$ nanoparticles had nanosized spherical shape and the crystallite sizes of 10~30 nm. The morphology of coated $TiO_2$ nanoparticles is not affected by gas pressure. However, the particle size and crystallinity slightly increased with the increase of gas pressure. According to this technique, the size and crystallinity of nanoparticles can be easily controlled by controlling pressure during the laser irradiation.

• Korean Journal of Materials Research
• /
• v.8 no.7
• /
• pp.634-640
• /
• 1998

A well- shaped trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy. The trench was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $0_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching, resulted in the well filled trench with oxide and polysilicon by subsequent deposition. The passivation layer of lateral etching was mainly composed of $SiO_xF_y$ $SiO_xBr_y$ confirmed by chemical analysis. It also affects the generation and distribution of lattice defects. Most of etch induced defects were found in the edge region of the trench bottom within the depth of 10$\AA$. They are generally decreased with the thickness of residue layer and almost disappeared below the uni¬formly thick residue layer. While the formation of crystalline defects in silicon substrate mainly depends on the incident angle and energy of etch species, the region of surface defects on the thickness of residue layer formed during trench etching.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.1
• /
• pp.35-41
• /
• 2017

$TiO_2$, $Al_2O_3$, and $TiO_2-Al_2O_3$ nanolaminated films were grown by atomic layer deposition (ALD) on the 316L stainless steel (SS316L) substrates at a temperature of $150^{\circ}C$. The growth kinetics of $ALD-TiO_2$ and $Al_2O_3$ thin films were systematically investigated in order to precisely control the thickness of each layers in the $TiO_2-Al_2O_3$ nanolaminated films using a high-resolution transmission electron microscopy. And, the exact deposition rates of $ALD-TiO_2$ on $Al_2O_3$ surface and $ALD-Al_2O_3$ on $TiO_2$ surface were revealed to be 0.0284 nm/cycle and 0.11 nm/cycle, respectively. At given growth conditions, the microstructures of $TiO_2$, $Al_2O_3$ and $TiO_2-Al_2O_3$ nanolaminated films were amorphous. The potentiodynamic polarization test revealed that the $TiO_2-Al_2O_3$ nanolaminated film coated SS316L had a best corrosion resistance, although all ALDcoated SS316L exhibited a clear improvement of the corrosion resistance compared with a bare SS316L.