• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.11
• /
• pp.816-820
• /
• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.6
• /
• pp.619-627
• /
• 2014

In this paper, we designed a blade antenna for VHF-UHF band(500 MHz~3 GHz) to be used as aircraft antennas. Unlike previously reported researches that use high-dielectric materials and insert rectangular extended grounds, the antenna structure was designed by optimizing the curvature of both a radiator and an extended ground whose shape is varied by changing the exponent of an n-th polynomial. Based on the optimized structure, we measured impedance matching and gain performances to evaluate the antenna in the VHF-UHF band(500 MHz~3 GHz). As a result, we confirmed that the antenna shows matching characteristics of less than -6 dB and has average gains of greater than -5 dBi in the entire VHF-UHF band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.191-191
• /
• 2007

유효 산화막 두께가 약 2.0nm 정도의 $ZrO_2$ 절연막 위에 Ta-Mo 금속 합금과 Ru-Zr 금속 합금을 Co-sputtering 방법을 이용하여 여러 가지 일함수를 갖는 MOS capacitor를 제작하여 전기적 재료적 특성에 관하여 연구를 하였다. 그 결과 각각의 금속 합금 게이트는 4.1eV 에서 5.1eV 사이의 다양한 일함수를 나타냈으며, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$ RTA 후의 C-V특성 곡선 및 I-V 측정을 통하여 누설전류를 확인하였다. 그 결과 Ta-Mo 금속 합금의 경우 스퍼터링 파워가 100W/70W에서 NMOS에 적합한 일함수를 가졌으며, Ru-Zr 금속 합금의 경우 스퍼터링 파워가 50W/100W에서 NMOS에 적합한 일함수를 가졌다. 열처리 후의 C-V특성 곡선에서도 정전용랑 값이 거의 변하지 않았으며 평탄 전압의 변화도 거의 없었다. 누설전류 특성에서는 물리적 두께가 비슷한 기존의 $SiO_2$ 절연막에서 실험결과와 비교하여 약 100배 정도 감소되었음을 알 수 있었다. 또한 기존의 실험들에서 나타난 열처리 후의 $ZrO_2$ 절연막과 Si 기판 사이의 Interfacial layer 의 동반 두께 증가로 인한 전기적 특성 저하가 나타나지 않는 줄은 특성을 보여준다.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1245-1251
• /
• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Journal of the Korean Magnetics Society
• /
• v.15 no.2
• /
• pp.67-75
• /
• 2005

For th aim of lightweight microwave absorbers, conductive and magnetic microspheres are fabricated by plating of Co films on hollow ceramic microspheres of low density. Metal plating was carried out in a two-step electroless plating process (pre-treatment of activation and plating). Uniform coating of the film with about $2{\~}3{\cal}um$ thickness was identified by SEM. High-frequency magnetic and microwave absorbing properties were determined in the rubber composites containing the Co-coated microspheres. Due to conductive and ferromagnetic behavior of the Co thin films, high dielectric constant and magnetic loss can be obtained in the microwave frequencies. Due to those electromagnetic properties, high absorption rate (25 dB) and thin matching thickness ($2.0{\~}2.5{\cal}mm$) are predicted in the composite layers containing the metal-coated microspheres of low density (about 0.84 g/cc) for the electromagnetic radiation in microwave frequencies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.477-477
• /
• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Applied Chemistry for Engineering
• /
• v.17 no.2
• /
• pp.217-222
• /
• 2006

Polyimides have been investigated extensively and used widely over the past three decades because of their high performance properties such as excellent thermal, mechanical, and electrical properties. Polyimides are difficult to be processed because of the aromatic moieties, imide group, and insoluble nature in most organic solvents. The soluble polyimides were synthesized from 2,2,-bis(3-amino-4-hydroxyphenyl) hexafluoropropane (BAPAF) and 3,3,-diamino-4,4-dihydroxybyphenyl (HAB) as aromatic diamines and 4,4-(hexafluoroisopropylidene)diphthalic dianhydride (6FDA), pyromellitic dianhydride (PMDA), 4,4-oxydiphthalic dianhydride (OPDA), 3,3,4,4-benzophenone tetracarboxylic dianhydride (BTDA) and 3,3,4,4-diphenylsulfone tetracarboxylic dianhydride (DSDA) as aromatic dianhydrides. The polyimides were characterized by NMR, FR-IR, TGA and the dielectric constant of the obtained polyimides was calculated from storage of electro-capacity. A novel photosensitive polyimide was synthesized by the reaction of polyimide, containing hydroxyl group and methacryloyl chloride using triethylamine. The good micro-pattern was obtained with photosensitive polyimide from the photolithographic technique.

• Journal of Advanced Navigation Technology
• /
• v.24 no.3
• /
• pp.232-237
• /
• 2020

In this paper, a compact microstrip-fed dual-band planar antenna for global positioning system (GPS) and mobile handset applications is presented. Dual operating frequency bands are achieved by an open end L-shaped slot and a bent rectangular slot. The proposed antenna is designed and fabricated on the FR4 substrate with dielectric constant of 4.3, thickness of 1.6 mm and size of 57 × 57 ㎟. The measured impedance bandwidth (|S₁₁|≤ -10dB) of the fabricated antenna is 60 MHz(1550 ~ 1610 MHz) in the GPS band and 670 MHz (1690 ~ 2360 MHz) in the DCS / IMT-2000 band, covering the required bandwidths for GPS(1570 ~ 1580 MHz) and DCS / IMT-2000 (1710 ~ 2200 MHz) bands. In particular, it has been observed that antenna has a good omnidirectional radiation patterns as well as high gain of 2.36 dBi and its efficiency is more than 90 % over the entire frequency band of interest.

• Advances in nano research
• /
• v.9 no.1
• /
• pp.1-13
• /
• 2020

In this work, the electrical potential (EP) technique with an artificial neural networks (ANNs) for monitoring of nanostructures are used for the first time. This study employs an expert system to identify size and localize hidden nano-delamination (N.Del) inside layers of nano-pipe (N.P) manufactured from Basalt Fiber Reinforced Polymer (BFRP) laminate composite by using low-cost monitoring method of electrical potential (EP) technique with an artificial neural networks (ANNs), which are combined to decrease detection effort to discern N.Del location/size inside the N.P layers, with high accuracy, simple and low-cost. The dielectric properties of the N.P material are measured before and after N.Del introduced using arrays of electrical contacts and the variation in capacitance values, capacitance change and node potential distribution are analyzed. Using these changes in electrical potential due to N.Del, a finite element (FE) simulation model for N.Del location/size detection is generated by ANSYS and MATLAB, which are combined to simulate sensor characteristic, therefore, FE analyses are employed to make sets of data for the learning of the ANNs. The method is applied for the N.Del monitoring, to minimize the number of FE analysis in order to keep the cost and save the time of the assessment to a minimum. The FE results are in excellent agreement with an ANN and the experimental results available in the literature, thus validating the accuracy and reliability of the proposed technique.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.8
• /
• pp.404-410
• /
• 2006

Toward the practical applications, on operation of conduction-cooled HTS SMES at temperatures well below 40[K] should be investigated, in order to take advantage of a greater critical current density of HTS and considerably reduce the size and weight of the system. In order to take advantage of a greater critical current density of high temperature superconducting (HTS) and considerably reduce the size and weight of the system, conduction-cooled HTS superconducting magnetic energy storage (SMES) at temperatures well below 40[K] should be investigated. This work focuses on the breakdown and flashover phenomenology of dielectrics exposed in air and/or vacuum for temperatures ranging from room temperature to cryogenic temperature. Firstly, we summarize the insulation factors of the magnet for the conduction cooled HTS SMES. And Secondly a surface flashover as well as volume breakdown in air and/or vacuum with two kind insulators has been investigated. Finally, we will discuss applications for the HTS SMES including aging studies on model coils exposed in vacuum at cryogenic temperature. The commercial application of many conduction-cooled HTS magnets, however, requires refrigeration at temperatures below 40[K], in order to take advantage of a greater critical current density of HTS and reduce considerably the size and weight of the system. The magnet is driven in vacuum condition. The need to reduce the size and weight of the system has led to the consideration of the vacuum as insulating media. We are studying on the insulation factors of the magnet for HTS SMES. And we experiment the spacer configure effect in the dielectric flashover characteristics. From the results, we confirm that our research established basic information in the insulation design of the magnet.