• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.17-20
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• 2005

In this paper, we presented the quasi-static characteristics of novel microstrip lines with anisotropic grooved dielectric in finite metal. A quasi-static mode-matching method has been used to analyze this new structure and the simulation results are validated through comparison with other available results. The results in this paper show that it is possible to control the propagation characteristics of microstrip lines with the use of anisotropic grooved dielectric in finite metal. Also anisotropic grooved dielectric in microstrip line can be newly added to the design parameters of high performance three dimensional monolithic microwave circuits and other microwave applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.162-162
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• 2012

Sub 100 nm의 Complementary Metal-Oxide-Semiconductor (CMOS) 소자를 구동하기 위해서는 2.0 nm 이하의 $SiO_2$ oxide에 해당하는 전기적 특성이 요구된다. 그러나 2.0 nm 이하의 $SiO_2$에서는 누설 전류가 너무 크기 때문에 이를 대체하기 위해서 유전 상수 (dielectric permittivity)가 높은 $HfO_2$ (${\varepsilon}=25$), $Al_2O_3$, $HfO_2/Al_2O_3$ laminate 등의 high-k dielectric 물질들이 연구되고 있다[1]. High-k dielectric 물질의 전기적 특성은 박막 조성, 두께 및 전극과의 계면에 생성되는 계면 층이나 불순물(Impurity) 거동에 크게 의존하므로 High-k dielectric/전극(Metal or Si) 구조에서 조성 및 불순물의 거동에 대한 정확한 평가가 주요 쟁점으로 부각되고 있다. 이를 평가하기 위해 일반적으로 $Ar^+$ ion에 의한 depth profiling 분석이 진행되나 Oxygen 원자의 선택적 식각에 기인된 분석 깊이 분해능(Depth Resolution) 왜곡으로 계면 층의 형성이나 불순물의 거동을 정확하게 평가할 수 없다. 이러한 예로는 $Ta_2O_5$ 및 $SrBi_2Ta_2O_9$와 같은 다 성분 계 산화막에 $Ar^+$ ion 주사 시 발생하는 선택적인 식각(Preferential Sputtering) 때문에 박막의 실제 조성 및 거동을 평가하는 것은 어렵다고 보고된 바 있다[2,3]. 본 연구에서는 $90{\AA}$인 적층 $Hf_xO_y/Al_xO_y/Hf_xO_y$ 구조에서의 불순물 거동 분석 능력 확보 상 주요 인자인 깊이 분해능 개선을 Secondary Ion Mass Spectroscopy(SIMS)의 primary ion 종, impact energy 및 주사 각도를 변화시켜 ~1 nm 수준까지 구현하였다. 이러한 분석 깊이 분해능의 개선은 Low Impact Energy, 입사 이온의 glancing angle 및 Cluster ion 적용에 의존하며 이들 요인의 효과에 대해 비교/고찰하고자 한다.

• Journal of the Korean Society of Safety
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• v.20 no.4 s.72
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• pp.29-33
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• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.340-345
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• 2003

B $i_2$ $O_3$-Ti $O_2$ composite dielectric ceramics have been prepared by a conventional solid state ceramic route. The composite ceramics were prepared with starting materials of different origin and the microwave dielectric properties were investigated. The sintered ceramics were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray microanalysis, Raman and microwave methods. Structural and microstructural analyses identified two separate phases: Ti $O_2$(rutile) and B $i_2$ $Ti_4$0$_{11}$. The separate grains of titania and bismuth titanate were distributed uniformly in the ceramic matrix. The composition 0.88Ti $O_2$-0.12B $i_2$ $Ti_4$ $O_{11}$ was found to have a Q$\times$f of 9300 GHz (measured at a frequency of 3.9 GHz), a temperature coefficient of frequency, $\tau$$_{cf}$ near zero and a high relative permittivity, $\varepsilon$r of 83. The microwave dielectric properties were measured down to 20$^{\circ}$K K. The quality factor increased on cooling the ceramic samples.les.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.1-5
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• 2018

Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.484-488
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• 2009

In this study, in order to develop the lead-free piezoelectric ceramics with high piezoelectric and dielectric properties, $[(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}(Nb_{0.96}Sb_{0.04})]O_3$ ceramics were fabricated using $Ag_2O$ as sintering aid and a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $SrTiO_3$ substitution. $SrTiO_3$ substitution enhanced density, dielectric constant(${\varepsilon}_r$) and electromechanical coupling factor($k_p$). However, mechanical quality factor was deteriorated. And also, Curie temperature ($T_c$), and phase transition temperature($T_p$) were rapidly decreased. At the 0.5 mol% $SrTiO_3$ substitution, density, electromechanical coupling factor($k_p$), dielectric constant(${\varepsilon}_r$) and piezoelectric constant($d_{33}$) of specimen showed the optimum value of $4.437\;g/cm^3$, 0.457, 1294, 265 pC/N, respectively.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1541-1543
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• 1996

This paper describes the results of characteristics on the tracking resistance, hydrophobicity and dielectric properties of silicone rubbers used for outdoor insulation with ozone ageing. The tracking and ozone ageing tests for this purpose ware made in according to IEC 587 and ASTM D 1149, respectively. Additionally, we investigated the surface structure of the silicone rubbers with FT-IR and SEM. From the test results, it is proven that the higher the degree of ozon ageing, the worse tracking characteristics.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1714-1716
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• 1998

The surface breakdown problem has plagued the development of high solid state for more than 30 years, but the physical basis for this flashover phenomenon is still not understood. The only way to overcome those problem and has a workable compact solid state switch is to passivate the surface by a solid state dielectric material, to coating/encapsulation the device in an insulting medium. In this paper, characteristics of flashover in high field Si-dielectric system behavior under high electric field is discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.