• Food Science of Animal Resources
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• v.26 no.4
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• pp.471-477
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• 2006

This study was conducted to evaluate the application of high dose irradiation for ensuring shelf stability of marinated and precooked pork rib steak in the severe environments such as desert or space, etc. Marinated and precooked pork rib steak was manufactured, vacuum-packaged and gamma-irradiated with the absorbed doses of 10, 20, 30, 40 and 50 kGy, and used for the tests of the growth of microorganisms and lipid oxidation during storage at 35t of acceleration condition. Any growth of microorganisms was not observed in irradiated samples after irradiation immediately. However, the growths were observed in 10, 20 and 30 kGy samples at 4, 7 and 14 day storage, respectively. High dose (40 and 50 kGy) gamma irradiation retarded the growth of aerobic microorganisms by the analysis of kinetic parameter. The content of malondialdehyde increased in all samples during storage periods, and gamma irradiation accelerated the increase of lipid oxidation. Therefore, the application of combination of the various food processing technology should be considered for the sterilization of marinated and precooked pork rib steak without any deterioration of the quality occurred by high dose irradiation.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.769-775
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• 2019

The tensile strength of irradiated 3C-SiC, SiC with artificial point defects, SiC with symmetric tilt grain boundaries (GBs), irradiated SiC with GBs are investigated using molecular dynamics simulations at 300 K. For an irradiated SiC sample, the tensile strength decreases with the increase of irradiation dose. The Young's modulus decreases with the increase of irradiation dose which agrees well with experiment and simulation data. For artificial point defects, the designed point defects dramatically decrease the tensile strength of SiC at low concentration. Among the point defects studied in this work, the vacancies drop the strength the most seriously. SiC symmetric tilt GBs decrease the tensile strength of pure SiC. Under irradiated condition, the tensile strengths of all SiC samples with grain boundaries decrease and converge to certain value because the structures become amorphous and the grain boundaries disappear after high dose irradiation.

• Nuclear Engineering and Technology
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• v.40 no.7
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• pp.533-538
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• 2008

In some situations, for example at very low doses, in microbeam irradiation experiments, or around high energy heavy ion tracks, use of the absorbed dose to describe the energy transferred to the irradiated target can be misleading. Since absorbed dose is the expected value of energy per mass it takes into account all of the targets which do not have any energy deposition. In many situations that results in numerical values, in Joules per kg, which are much less than the energy deposited in targets that have been crossed by a charged particle track. This can lead to confusion about the biochemical processes that lead to the consequences of irradiation. There are a few alternative approaches to describing radiation that avoid this potential confusion. Examples of specific situations that can lead to confusion are given. It is concluded that using the particle radiance spectrum and the exposure time, instead of absorbed dose, to describe these irradiations minimizes the potential for confusion about the actual nature of the energy deposition.

• Progress in Medical Physics
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• v.6 no.1
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• pp.49-57
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• 1995

The semiconductor detector has a high sensitive to radiation and a small volume. It has been frequently used in high energy photon and electron beamdosimetry. However, Semiconductor detector are subject to radiation damage in high energy radiation beam which reduces the sensitivity and creat a large discrepancy. In this experiments, P-type semiconductor was irradiated to 18 MeV electron beam with pre-irradiation for reducing the sensitivity for high reproducibility and investigated the dose characteristics against the dose rate variations. The sensitivity per unit dose in small dose rate showed a 35％ large different to a large dose rate with pre-irradiation dose for 0.5 KGy and 20％ for 3 KGyin this study. The silicon detector has showed a large dependency of beam direction with 13％ discrepancy and a linear sensitive as increased temperature.

• Progress in Superconductivity and Cryogenics
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• v.18 no.4
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• pp.15-20
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• 2016

The effects of electron beam (EB) irradiation on the superconducting critical temperature ($T_c$) and critical current density ($J_c$) of YBCO films were studied. The YBCO thin films were irradiated using a KAERI EB accelerator with an energy of 0.2 MeV and a dose of $10^{15}-10^{16}e/cm^2$. A small $T_c$ decrease and a broad superconducting transition were observed as the EB dose increased. The value of $J_cs$ (at 20 K, 50 K and 70 K) increased at doses of $7.5{\times}10^{15}$ and $2.2{\times}10^{16}e/cm^2$. However, $J_cs$ decreased as the dose increased further. The X-ray diffraction (XRD) analysis showed that the c axis of YBCO was elongated and the full width at half maximum (FWHM) increased as the dose increased, which is strong evidence of the atomic displacement by EB irradiation. The transmission electron microscopy (TEM) showed that the amorphous layer formed in the vicinity of the surfaces of the irradiated films. The amorphous phase was often present as an isolated form in the interior of the films. In addition to the formation of the amorphous phase, many striations running along the a-b direction of YBCO were observed. The high magnification lattice image showed that the striations were stacking faults. The enhancement of $J_c$ by EB irradiation is likely to be due to the lattice distortion and the formation of defects such as vacancies and stacking faults. The decrease in $J_c$ at a high EB dose is attributed to the extension of the amorphous region of a non-superconducting phase.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3417-3422
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• 2023

Recently, as the clinically positive biological effects of ultra-high dose rate (UHDR) radiation beams have been revealed, interest in flash radiation therapy has increased. Generally, FLASH preclinical experiments are performed using UHDR electron beams generated by linear accelerators. Real-time monitoring of UHDR beams is required to deliver the correct dose to a sample. However, it is difficult to use typical transmission-type ionization chambers for primary beam monitoring because there is no suitable electrometer capable of reading high pulsed currents, and collection efficiency is drastically reduced in pulsed radiation beams with ultra-high doses. In this study, a monitoring method using bremsstrahlung photons generated by irradiation devices and a water phantom was proposed. Charges collected in an ionization chamber located at the back of a water phantom were analyzed using the bremsstrahlung tail on electron depth dose curves obtained using radiochromic films. The dose conversion factor for converting a monitored charge into a delivered dose was determined analytically for the Advanced Markus® chamber and compared with experimentally determined values. It is anticipated that the method proposed in this study can be useful for monitoring sample doses in UHDR electron beam irradiation.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.23-27
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• 2005

We observed that optical properties of silicon changed under high dose electron irradiation at 250 keV. Our experimental results revealed that the optical transmission through a silicon wafer is significantly increased by electron irradiation. Transmission increase by the change in the absorption coefficient is explained through an analogy with amorphous silicon. Moreover, solar cell open-circuit voltages indicated that defects were generated by electron irradiation, and that the defects responded to annealing. Our results demonstrated that the optical properties of silicon can be controlled by a combination of electron irradiation and hydrogen annealing.

• Nuclear Engineering and Technology
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• v.44 no.8
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• pp.953-960
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• 2012

This paper reports the irradiation effect on the deformation behavior and tensile fracture properties of A533B RPV steel. An inverse identification technique using iterative finite element (FE) simulation was used to determine those properties from tensile data for the A533B RPV steel irradiated at 65 to $100^{\circ}C$ and deformed at room temperature. FE simulation revealed that the plastic instability at yield followed by softening for higher doses was related to the occurrence of localized necking immediately after yielding. The strain-hardening rate in the equivalent true stress-true strain relationship was still positive during the necking deformation. The tensile fracture stress was less dependent on the irradiation dose, whereas the tensile fracture strain and fracture energy decreased with increasing dose level up to 0.1 dpa and then became saturated. However, the tensile fracture strain and fracture energy still remained high after high-dose irradiation, which is associated with a large amount of ductility during the necking deformation for irradiated A533B RPV steel.

• Nuclear Engineering and Technology
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• v.38 no.7
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• pp.619-638
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• 2006

Low temperature irradiation can significantly harden metallic materials and often lead to strain localization and ductility loss in deformation. This paper provides a review on the radiation effects on the deformation of metallic materials, focusing on microscopic and macroscopic strain localization phenomena. The types of microscopic strain localization often observed in irradiated materials are dislocation channeling and deformation twinning, in which dislocation glides are evenly distributed and well confined in the narrow bands, usually a fraction of a micron wide. Dislocation channeling is a common strain localization mechanism observed virtually in all irradiated metallic materials with ductility, while deformation twinning is an alternative localization mechanism occurring only in low stacking fault energy(SFE) materials. In some high stacking fault energy materials where cross slip is easy, curved and widening channels can be formed depending on dose and stress state. Irradiation also prompts macroscopic strain localization (or plastic instability). It is shown that the plastic instability stress and true fracture stress are nearly independent of irradiation dose if there is no radiation-induced phase change or embrittlement. A newly proposed plastic Instability criterion is that the metals after irradiation show necking at yield when the yield stress exceeds the dose-independent plastic instability stress. There is no evident relationship between the microscopic and macroscopic strain localizations; which is explained by the long-range back-stress hardening. It is proposed that the microscopic strain localization is a generalized phenomenon occurring at high stress.

• Macromolecular Research
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• v.12 no.1
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• pp.112-118
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• 2004

With the goal of enhancing the creep resistance of ultra-high molecular weight polyethylene (UHMWPE), we performed gamma irradiation and post-irradiation annealing at a low temperature, and investigated the crystalline structures and mechanical properties of the samples. Electron spin resonance spectra reveal that most of the residual radicals are stabilized by annealing at 100$^{\circ}C$ for 72 h under vacuum. Both the melting temperature and crystallinity increase after increasing the dose and by post-irradiation annealing. When irradiated with the same dose, the quenched sample having a higher amorphous fraction exhibits a lower swell ratio than does the slow-cooled sample. The measured tensile properties correlate well to the crystalline structure of the irradiated and annealed samples. For enhancing creep resistance, high crystallinity appears to be more critical than a high degree of crosslinking.