• Korean Journal of Materials Research
• /
• v.25 no.3
• /
• pp.138-143
• /
• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.533-537
• /
• 2003

Compared to sintered polycrystalline diamond (PCD), the deposited thin film diamond has a great advantage on the fabrication of cutting tools with complex geometries such as drills. Because of high performance in high speed machining non-ferrous difficult-to-cut materials in the field of automobiles industry, aeronautics and astronautics industry, diamond-coated drills find large potentialities in commercial applications. However, the poor adhesion of the diamond film on the substrate and high surface roughness of the drill flute adversely affect the tool lift and machining quality and they become the main technical barriers for the successful development and commercialization of diamond-coated drills. In this paper, diamond thin films were deposited on the commercial WC-Co based drills by the electron aided hot filament chemical vapor deposition (EACVD). A new multiple coating technology based on changing gas pressure in different process stages was developed. The large triangular faceted diamond grains may have great contribution to the adhesive strength between the film and the substrate, and the overlapping ball like blocks consisted of nanometer sized diamond crystals may contribute much to the very low roughness of diamond film. Adhesive strength and quality of diamond film were evaluated by scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectrum and drilling experiments. The ring-block tribological experiments were also conducted and the results revealed that the friction coefficient increased with the surface roughness of the diamond film. From a practical viewpoint, the cutting performances of diamond-coated drills were studied by drilling the SiC particles reinforced aluminum-matrix composite. The good adhesive strength and low surface roughness of flute were proved to be beneficial to the good chip evacuation and the decrease of thrust and consequently led to a prolonged tool lift and an improved machining quality. The wear mechanism of diamond-coated drills is the abrasive mechanical attrition.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.3
• /
• pp.131-135
• /
• 2008

This study is to establish the coating technique for synthetic mica and to prepare synthetic mica with the non-aqueous property. The surface coating of synthetic mica is prepared with stearic acid using the high speed stirrer. The characterizations for mica powders coated the stearic acid are carried out by the deposition test, XRD and SEM. The results of research could be coated the stearic acid on the mica by 1600 rpm/min at $70^{\circ}C$ for 10 min. From the observation of SEM was found that the non-aqueous property mica could obtained by mixture ratios for stearic acid and mica, the inner temperature and rotation speed of the stirrer but treated time be unrelated.

• Corrosion Science and Technology
• /
• v.5 no.2
• /
• pp.52-61
• /
• 2006

Recently, much of the current development in surface modification engineering are focused on multilayered coatings. Multilayered coatings have the potential to improve the tribological properties. Four different multilayered coatings were deposited on AISI D2 steel. The prepared samples are designed as $WC-Ti_{0.6}Al_{0.4}N$, $WC-Ti_{0.53}Al_{0.47}N$, $WC-Ti_{0.5}Al_{0.5}N$ and $WC-Ti_{0.43}Al_{0.57}N$. The multilayered coatings were investigated with respect to coating surface and cross-sectional morphology, roughness, adhesion, hardness, porosity and tribological behavior. Especially, wear tests of four multilayered coatings were performed by using a ball-on-disc configuration with a linear sliding speed of 0.017 m/sec, 5.38 N load. The tests were carried out at room temperature in air by employing AISI 52100 steel ball ($H_R=66$) having a diameter of 10 mm. The surface morphology, and topography of the wear scars of samples and balls have been determined by using scanning electron spectroscopy (SEM). Results have showed an improved wear resistance of the $WC-Ti_{1-x}Al_xN$ coatings with increasing of Al concentration. $WC-Ti_{0.43}Al_{0.57}N$ coating with the lower surface roughness and porosity with good adhesion enhanced wear resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.400-403
• /
• 2003

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.9 no.4
• /
• pp.892-898
• /
• 2008

3D rapid prototyping is the manufacturing technology to fabricate a prototype with the data stored in a computer, which differs from conventional casting technology in terms of an additive process. Various 3D rapid prototyping techniques such as stereolithograpy. fused deposition modeling. selective laser sintering, laminated object manufacturing have been developed but among them, 3D inkjet printing has a unique feature that materials could be jetted to directly form the body of a prototype, which could be a finished product functionally and structurally. However, this needs ink with a high solid content, which tends to increase the dynamic viscosity of ink. The increase of ink viscositytends to restrict the jettable range of ink and hence the jetting conditions should be optimized. The intrinsic speed of sound in a hot melt ink with ceramic nanoparticles dispersed is one of key components to determine the jettable range of ink. In this paper, the way to measure the intrinsic speed of sound in a hot melt ceramic ink is proposed and its influence on the jetting condition is discussed.

• Korean Chemical Engineering Research
• /
• v.60 no.2
• /
• pp.308-312
• /
• 2022

3D printing technology, which creates a physical object by various material deposition, has been widely used in recent years in the manufacturing field because of its advantages. Among the various printing technologies, droplet-based 3D printing technology (e.g., Polyjet^®) enables a high-resolution printing using photocurable materials such as hydrogels. Depending on the degree of light exposure, ejected photocurable droplets may have different properties (e.g., viscosity) until they collide with the substrate and it leads to the different spreading behaviors of the droplets (i.e., impact, spreading, and recoiling) during deposition on the substrate. In this study, experimental observation and analysis of the changes in hydrogel droplet viscosity and spreading behavior according to the light exposure were carried out based on high-speed image processing.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.67.1-67.1
• /
• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.4
• /
• pp.131-134
• /
• 2011

Back-end-of-line using ultra low-k (ULK; k < 2.5) has been required to reduce resistive capacitance beyond 45 nmtechnologies, because micro-processing units need higher speed and density. There are two strategies to manufacture ULK inter-layer dielectric (ILD) materials using an air-gap (k = 1). The former ULK and calcinations of ILD degrade the mechanical strength and induce a high cost due to the complication of following process, such as chemical mechanical polishing and deposition of the barrier metal. In contrast, the air-gap based low-k ILD with a relatively higher density has been researched on the trench-type with activity, but it has limited application to high density devices due to its high air-gap into the next metal layer. The height of air-gap into the next metal layer was reduced by changing to the via-typed air-gap, up to about 50% compared to that of the trench-typed air-gap. The controllable ULK was easily fabricated using the via-typed air-gap. It is thought that the via-type air-gap made the better design margin like via-patterning in the area with the dense and narrow lines.

• Journal of the Korean institute of surface engineering
• /
• v.19 no.3
• /
• pp.92-108
• /
• 1986

An electroplating on the lead frame fabricated from domestic copper plate was studied experimentally. In this study, nickel was plated on the thin copper lead frame and silver layer was coated on the nickel film in the cyanide electrolyte. The effect of process variables such as current density, plating time, coating thickness and flow rate of electrolytic solution on the properties of coating was investigated. Some samples on each step were fabricated during electroplating. The results obtained from polarization measurement, observation of SEM photograph, adhesion test of coating and microhardness test are as follows. On silver plating, polarization resistance of potentiostatic cathodic polarization curve is reduced as the flow rate of Ag electrolytic solution increases. And above resistance is also reduced when the minor chemicals of sodium cyanide and sodium carbonate are added in potassium silver cyanide bath. The reduced polarization resistance makes silver deposition on the cathode easy. An increase in the current density and the coating thickness causes the particle size of deposit to coarsen, and consequently the Knoop microhardness of the coating decreases. On selective plating an increase in the flow rate of plating solution lead to do high speed plating with high current density. In this case, the surface morphology of deposit is of fine microstructure with high Knoop hardness. An increasing trend of the adhesion of coating was shown with increasing the current density and flow rate of electrolytic solution.