• 한국재료학회지
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• 제25권1호
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• pp.1-8
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• 2015

This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

• Applied Microscopy
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• 제26권4호
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• pp.479-487
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• 1996

Thin epilayer structures of GaAs/AlAs/InGaAs, grown by Molecular Beam Epitaxy, were investigated by high resolution transmission electron microscopy, Image in the [110] zone axis was taken and compared with the calculated images. The supercell structure which contains GaAs, AlAs and InGaAs layers was designed and was employed in the image calculation with MacTempas computer program. Good agreement was shown between experimental image and a set of calculated images with varying defocus and sample thickness.

• 전자공학회논문지A
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• 제31A권7호
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• 한국재료학회지
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• 제19권8호
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• pp.447-451
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• 2009

The long-period stacking order (LPSO) structures and stacking faults (SFs) in rapidly solidified powder metallurgy (RS P/M) $Mg_{97}Zn_1Y_2$ alloy were investigated by high resolution transmission electron microscopy (HRTEM) observations. The 18R-type LPSO structure with a stacking sequence of ACBCBCBACACACBABAB and a period of 4.86 nm was observed in the as-extruded RS P/M $Mg_{97}Zn_1Y_2$ alloy. After annealing at 773 K for 5 hr, the 18R-type LPSO structure was transformed to the 14H-type LPSO structure with a stacking sequence of ABABABACBCBCBC and a period of 3.64 nm. The 24R-type LPSO structure containing 24 atomic layers of ABABABABCACACACABCBCBCBC with period of 6.18 nm coexists with the 14H-type LPSO structure in the same grains. The LPSO structures contain intrinsic Type II SFs such as BCB/CABA and ABA/CBCB stacking sequences of a closely packed plane.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.286-287
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• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• Bulletin of the Korean Chemical Society
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• 제32권5호
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• pp.1579-1582
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• 2011

Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in few-layer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.

• Applied Microscopy
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• 제39권2호
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• pp.175-183
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• 2009

이 논문에서 50 pm 이하의 원자열 분해상을 효과적으로 보여 주는 결정 밑 표면 파동함수(EPW)의 음(-)의 2차 도함수의 시뮬레이션 영상들이 나타나 있다. 그리고 해당 EPW는 HRTEM에서 일련의 비 초점 단계의 관찰 영상으로부터 얻을 수 있다. 이 논문에 나타난 시뮬레이션한 영상들은 대체로 50 pm 이하의 원자열 간격을 주는 Si과 InAs의 [114] 및 [116] 방위 축에 대한 것이다. 이 방법의 정당성에 대한 이론적 이유가 운동학적 회절이론을 기초로 한 분석에서 주어졌다. 그리고 그 응용성의 한계도 논의되었다.

• Applied Microscopy
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• 제38권1호
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• pp.63-72
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• 2008

Allen et al. (2004)에 의해 개발된 IWFR 방법에 대해서 응용성에 관심을 가지고 고찰되었다. 이 고찰에는 문헌에 보고된 GaAs, $YBa_2CuO_7$ 및 $Al_2CuMg$의 재료에 대한 HRTEM 연구물들이 이용되었다. 이 고찰 과정에서 이 방법의 타당성에 대한 이론적 근거, 제한조건 및 정보한계들을 명확히 제시되었다. IWFR 방법을 통해 얻은 결정 밑 표면에 전자 파동함수의 상(phase)-영상은 구면수차에 의한 영상 왜곡이 교정된 정보한계 범위 내에서 원자분해상을 나타낼 뿐만 아니라 결정의 구성원자의 원자번호에 대체적으로 비례하는 강도 분포를 나타내는 강한 경향이 있음이 특히 주목되었다.

• Applied Microscopy
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• 제41권3호
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• pp.147-154
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• 2011

후방산란전자(BSE)는 입사전자빔이 시료와 충돌하면서 발생한다. BSE 이미징은 시료의 화학적 특성을 구분할 수 있는 조성대비를 제공한다. 집속이온빔장치(FIB)는 전계방사형 주사전자현미경(FESEM)과 결합할 수 있으므로 이중빔 체계(FIB-FESEM)가 구현된다. 갈륨(Ga) 이온빔으로 10~100 nm 두께로 시료를 절삭할 수 있으므로 FIB-FESEM은 플라스틱으로 포매된 블록의 면을 z축 고해상도를 유지하며 연속적으로 이미징할 수 있다. BSE이미지의 대비를 반전시키면 투과전자현미경의 이미지와 유사하다. 연속블록면 이미징의 또 다른 방안으로써 특수한 초박절편기가 FESEM 내부에 장착된 것이 $3View^{(R)}$로 상용화되어 있다. 이로써 플라스틱으로 포매된 시료의 내부 구조를 넓은 면적을 연속적으로 이미징 할 수 있으므로 3차원 재구성도 용이하게 된다. 이러한 FESEM에 기반한 두 가지 방식은 복잡한 생물계의 총체적인 이해를 위하여 세포 및 세포 수준 이하의 구조물 간의 공간적 연관성을 규명하는 데 활용될 수 있다.

• 한국환경과학회지
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• 제29권1호
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• pp.95-108
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• 2020

Silver nanoparticles were loaded onto g-C₃N₄ (CN) with a nanoroll-type morphology (Ag/CN) synthesized using a co-polymerization method for highly selective conversion of toxic nitrobenzene to industrially-valuable aminobenzene. Scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) images of Ag/CN revealed the generation of the nanoroll-type morphology of CN. Additionally, HRTEM analysis provided direct evidence of the generation of a Schottky barrier between Ag and CN in the Ag/CN nanohybrid. Photoluminescence analysis and photocurrent measurements suggested that the introduction of Ag into CN could minimize charge recombination rates, enhancing the mobility of electrons and holes to the surface of the photocatalyst. Compared to pristine CN, Ag/CN displayed much higher ability in the photocatalytic reduction of nitrobenzene to aminobenzene, underscoring the importance of Ag deposition on CN. The enhanced photocatalytic performance and photocurrent generation were primarily ascribed to the Schottky junction formed at the Ag/CN interface, greater visible-light absorption efficiency, and improved charge separation associated with the nanoroll morphology of CN. Ag would act as an electron sink/trapping center, enhancing the charge separation, and also serve as a good co-catalyst. Overall, the synergistic effects of these features of Ag/CN improved the photocatalytic conversion of nitrobenzene to aminobenzene.