• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.7 s.178
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• pp.1801-1809
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• 2000

A study on the topology optimization of Hard-Disk-Driver(HDD) actuator arm in free vibration is presented. The purpose of this research is to increasse the natural frequency of the first lateral mode of the HDD actuator arm under the constraint of total moment of inertia, so as to facilitate the position control of high speed actuator am. The first lateral mode is an important factor in the position control process. Thus the topology optimization for 2-D model of the HDD actuator arm is considered. A new objective function corresponding to multieigenvalue optimization is suggested to improve the solution of the eigenvalue optimization problem. The material density of the structure is treated as the design variable and the intermediate density is penalized. The effects of different element types and material property functions on the final topology are studied. When the problem is discretized using 8-node element of a uniform density, the smoothly-varying density field is obtained without checker-board patterns incurred. As a result of the study an improved design of the HDD actuator arm is suggested. Dynamic characteristics of the suggested design are compared computationally with those of the old design. With the same amount of the moment of inertia, the natural frequency of the first lateral mode or the suggested design is subsequently increased over the existing one.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.403-405
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• 2006

Over the years, plasma display panel (PDP) manufacturers have impressed the flat panel display industry with yet another new product essentially having the merits of a larger screen size. Since larger size implies higher power ratings, voltage/current ratings of the power devices used have become a rising concern. Another important concern is the brightness of PDP, one way of increasing which is by operating the PDP at higher frequencies. In order to address the above issues, a transformer coupled sustain-driver for AC-PDP is proposed During the transition time, the two windings of the transformer greatly boost up the displacement current flowing through the panel capacitance and hence enable a fast inversion of the voltage polarity with practical values of resonant inductance. In the proposed topology, the resonant inductance can be increased by a factor of $(n+1)^2$ as compared to prior approaches. Increased inductance results in lower current stresses. Moreover, high frequency operation is possible by using higher value of n (turn ratio of the transformer). The operational principle and design procedure of the proposed circuit are presented with theoretical analysis. The validity of the proposed sustain driver is established through simulation and experimental results using a 42-in PDP

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.50-56
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• 2002

When the plasma panel is used as a display, frequent discharging are made to occur by alternatively charging each side of the panel to a critical voltage, which causes repeated gas discharges to occur. In this paper, an efficient sustain driver is proposed to achieve a faster rise-time in order to be suitable to widely used ADS driving method. The proposed circuit increases an operational margin up to 20 % compared with conventional approaches improving the recovery efficiency regardless of the variation of panel capacitance. Thanks to the increased operational margin, the brightness decrease problem can be solved without a limitation to sustain pulse width. The principle of operation, and features are illustrated, and verified on a 7.5 inch diagonal panel at 200 kHz operating frequency - based on experimental prototype.

• BMB Reports
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• v.51 no.10
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• pp.481-483
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• 2018

Glioblastoma (GBM) is the most common and aggressive form of human adult brain malignancy. The identification of the cell of origin harboring cancer-driver mutations is the fundamental issue for understanding the nature of GBM and developing the effective therapeutic target. It has been a long-term hypothesis that neural stem cells in the subventricular zone (SVZ) might be the origin-of-cells in human glioblastoma since they are known to have life-long proliferative activity and acquire somatic mutations. However, the cell of origin for GBM remains controversial due to lack of direct evidence thereof in human GBM. Our recent study using various sequencing techniques in triple matched samples such as tumor-free SVZ, tumor, and normal tissues from human patients identified the clonal relationship of driver mutations between GBM and tumor-free SVZ harboring neural stem cells (NSCs). Tumor-free SVZ tissue away from the tumor contained low-level GBM driver mutations (as low as 1% allelic frequency) that were found in the dominant clones in its matching tumors. Moreover, via single-cell sequencing and microdissection, it was discovered that astrocyte-like NSCs accumulating driver mutations evolved into GBM with clonal expansion. Furthermore, mutagenesis of cancer-driving genes of NSCs in mice leads to migration of mutant cells from SVZ to distant brain and development of high-grade glioma through the aberrant growth of oligodendrocyte precursor lineage. Altogether, the present study provides the first direct evidence that NSCs in human SVZ is the cell of origin that develops the driver mutations of GBM.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.746-748
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• 1993

To overcome the problem of the diode reverse recovery in high switching frequency inverter, a new gate drive scheme is proposed for IGBT in this paper. Using this circuit, the reverse recovery current can be controlled and faster switching time can be achieved for hard switching inverter. The over-current protection method, which is suitable for the proposed gate driver, is also presented. The operation of the proposed circuit is investigated and its usefulness is verified through the experimental results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.71-79
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• 2010

This paper presents a design of a LLC resonant controller IC. LLC resonant controller IC controls the voltage of the 2nd side by adjusting frequency the input frequency of the external resonant circuit. The clock generator is integrated to provide the pulse to the resonant circuit and its frequency is controlled by the external resistor. Also, the frequency of the VCO is adjusted by the feedback voltage. The protection circuits such as UVLO(Under Voltage Lock Out), brown out, fault detector are implemented for the reliable and stable operation. The HVG, and LVG drivers can provide the high current and voltage to the IGBT. The designed LLC resonant controller IC is fabricated with the 0.35 um 2P3M BCD process. The overall die size is $1400um{\times}1450um$, and supply voltage is 5V, 15V.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.347-349
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• 2013

This paper describes analysis and calculation of line frequency ripple current according to output capacitor value and effects of LED connection in the single stage flyback converter with high power factor. The low frequency output ripple current delivered from single stage converter has been analyzed in detail and the method evaluating parasitic resistance included in LED has been provided. In order to verify the equation derived in this paper, the single stage flyback converter has been designed with constant output current regulation with DCM operation. Experiments were conducted with different LED load structures to analyze the effect of LED parasitic resistance on output ripple current. As test results, the calculation can provide guide line to select capacitor values depending on output ripple current and LED characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.7-14
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• 2008

In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.241.1-241.1
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• 2014

The large-area high-power radio-frequency (RF) driven ion sources based on the negative hydrogen (deuterium) ion beam extraction are the major components of neutral beam injection (NBI) systems in future large-scale fusion devices such as an ITER and DEMO. Positive hydrogen (deuterium) RF ion sources were the major components of the second NBI system on ASDEX-U tokamak. A test large-area high-power RF ion source (LAHP-RaFIS) has been developed for steady-state operation at the Korea Atomic Energy Research Institute (KAERI) to extract the positive ions, which can be used for the NBI heating and current drive systems in the present fusion devices, and to extract the negative ions for negative ion-based plasma heating and for future fusion devices such as a Fusion Neutron Source and Korea-DEMO. The test RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of RF discharge. The characteristics and uniformities of the plasma parameter in the RF ion source were measured at the lowest area of the expansion bucket using two RF-compensated electrostatic probes along the direction of the short- and long-dimensions of the expansion region. The plasma parameters in the expansion region were characterized by the variation of loaded RF power (voltage) and filling gas pressure.

• Journal of Electrical Engineering and Technology
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• v.11 no.1
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• pp.125-134
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• 2016

We propose an efficient high voltage level shifter for a high side Buck converter driving a light-emitting diode (LED) lamp. The proposed circuit is comprised of a low voltage pulse width modulation (PWM) signal driver, a coupling capacitor, a resistor, and a diode. The proposed method uses a property of a PWM signal. The property is that the signal repeatedly transits between a low and high level at a certain frequency. A low voltage PWM signal is boosted to a high voltage PWM signal through a coupling capacitor using the property of the PWM signal, and the boosted high voltage PWM signal drives a p-channel metal oxide semiconductor (PMOS) transistor on the high side Buck converter. Experimental results show that the proposed level shifter boosts a low voltage (0 to 20 V) PWM signal at 125 kHz to a high voltage (370 to 380 V) PWM signal with a duty ratio of up to 0.9941.