• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.11
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• pp.624-629
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• 2004

The UHF electromagnetic waves excited by PD pulses propagate along the GIS busbar not only TEM mode, but also TE and TM mode. Generally the waves detected by the UHF sensors are those of high order modes and such waves can only propagate higher than cut-off frequency. In this paper, the cut-off frequency of 362[kV] GIS for each modes is computed and the electromagnetic field of each propagation modes is simulated by FEM(Finite Element Method) program. Frequency band of each TEmn/TMmn modes was determinated by simulation results and was discussed optimal position of UHF sensor from this results.

• ETRI Journal
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• v.27 no.3
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• pp.304-311
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• 2005

We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

• Journal of Information Display
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• v.12 no.2
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• pp.109-113
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• 2011

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency ($f_T/f_{max}$) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies ($f_{res}$) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.565-570
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• 2012

This paper has proposed a multi-channel low pass filter (LPF) for LTE-Advanced systems. The proposed LPF is an active-RC 5th chebyshev topology with three cut-off frequencies of 5 MHz, 10 MHz, and 40 MHz. A 3-bit tuning circuit has been adopted to prevent variations of each cut-off frequency from process, voltage, and temperature (PVT). To achieve a high cut-off frequency of 40 MHz, an operational amplifier used in the proposed filter has employed a PMOS cross-connection load with a negative impedance. A proposed filter has been implemented in a 0.13-${\mu}m$ CMOS technology and consumes 20.2 mW with a 1.2 V supply voltage.

• Journal of Advanced Navigation Technology
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• v.25 no.5
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• pp.363-369
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• 2021

In this paper, We propose variable cut-off frequency and variable sample rate small-area multi-channel digital filter for telemetry system. Proposed digital filter reduced hardware area by implementing filter banks that can variably use cut-off frequency and sample rate without additional filter banks for an arbitrary cut ratio. In addition, We propose the architecture in which sample rate can variably be selected according to the number of filters that pass through the multiplexer control. By using time division multiplexing (TDM) supported by the finite impulse response (FIR) intellectual property (IP) of Quartus, the proposed digital filter can greatly reduce digital signal processing (DSP) blocks from 80 to 1 compared without TDM. Proposed digital filter calculated order and coefficients using Kaiser window function in Matlab, and implemented using very high speed integrated circuits hardware descryption language (VHDL). After applying to the telemetry system, we confirmed that the proposed digital filter was operating through the experimental results in the test environment.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.1
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• pp.78-84
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• 2011

Using sensors to detect current or voltage of motors is disadvantaged because motor is exposed to vibration, impacts, corrosion, high temperature and humidity in the machinery structure like HEV. In the case of IPMSM, position information is included not only in the flux or EMF term but also in the rotator inductance because of its saliency. To solve this problem, a new mathematical model of IPMSMs on fixed frame is proposed and an extended EMF includiing rotating position information is defined to estimate extended EMF. A strong low-pass filter through the variable cut-off frequency using velocity function was proposed. This makes it is possible to estimate extended EMF by least order disturbance observer. The proposed method was proved through the experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.55-58
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• 2000

SiGe heterojuction bipolar transistors (HBT) have been studied and applied for advanced high speed integrated circuits. Device characteristics of SiGe HBT depending on the Ge profile of the transistor base region have been analysed using a device simulator, ATLAS/BLAZE. The models and parameters have been calibrated to the measured characteristics of the device, having a trapeziodal base profile, including the cut-off frequency of 45GHz and the dc current gain of 200. The Ge concentration which increases linearly, exponentially, or root-functionally from the emitter-base junction to the base-collector junction, has been tried to find out the influence on the device characteristics. The cut-off frequency and gain rather strongly depends on the exponential and root-functional Ge base profiles, respectively.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1784-1786
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• 1996

It is necessary to eliminate the broad band noise which frequency is in a few kHz to MHz in the AC line to supply the power to electrical and electronic control equipments. Because this kind of noise could damage the device or could be a source of malfunction, many devices like a filter and surge suppressor are developed to cut off the noise. But those device could not disconnected from the power line, so it remain some problem and on be used in limited area, In this paper, we present performance test results NCT(noise Cut Transformer) with excellent performance for reducing the high frequency noise and surge existing in the power line.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1706-1711
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• 2016

Electromagnetic wave simulation was performed to predict characteristics of manufactured cutoff probe at low temperature magnetized plasma medium. Microwave cutoff probe is designed for research the properties of magnetized inductively coupled plasma. It was shown that the cutoff probe method can safely be used for weakly magnetized high density plasma sources. Cutoff probe system with two port network analyzer has been prepared and applied to measure electron density distributions in large area, 13.56MHz driven weakly magnetized inductively coupled plasma source. The results shown that, the plasma frequency confirmed cut-off characteristics in low temperature plasma. Especially, cut-off characteristics was found at upper hybrid resonance frequency in the environment of the magnetic field. In case of a induced weak magnetic field in inductively coupled plasma, plasma density estimated from the cutoff frequency in the same way at unmagnetized plasma due to nearly same plasma frequency and upper hybrid resonance frequency. The plasma density is increased and uniformity is improved by applying a induced weak magnetic field in inductively coupled plasma.