• Journal of Korea Foundry Society
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• v.30 no.3
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• pp.115-120
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• 2010

Recently, an advanced raw material supplying system in diecasting industry that molten metal produced by the raw material supplier can be directly delivered to the diecasting shops was proposed. It was known to have advantages of reducing melting process cost and improving working environment. However, for its successful mass production, the development of high insulation ladle is inevitable. In this study, the optimal mixing ratio of $SiO_2-Al_2O_3$ was investigated and the high insulation ladle with computer simulation result was built in a prototype and evaluated. The prototype which has refractory wall of $SiO_233%-Al_2O_3$ 35%-CaO 33% showed high insulation sufficient for carrying the Al molten metal for 138 minutes. Gas quantity result and SEM-EDS analysis on the melt poured in the ladle also showed extremely low level of 0.028 cc / 100 g and no penetration of Al molten metal into the refractory wall, satisfying the requirements for mass production.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• Journal of the Korean Magnetic Resonance Society
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• v.21 no.2
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• pp.67-71
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• 2017

At high temperature, the roles of $NH_4$ and $H_2O$ in $(NH_4)_2Fe(SO_4)_2{\cdot}6H_2O$ and $(NH_4)_2Zn(SO_4)_2{\cdot}6H_2O$ single crystals were investigated using a pulse NMR spectrometer. Temperature was shown to have a significant influence, causing changes in the deformation of $NH_4$ and $H_2O$. From the $^1H$ NMR and $^{14}N$ NMR spectrum, the forms of environment surrounding $^{14}N$ in $NH_4$ groups is more important than the loss of $H_2O$ groups. NMR studies indicate that $NH_4{^+}$ ions in Tutton salts play an important role in the changes of the crystal structure at high temperatures.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.141-147
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• 2010

In this study, high-k oxide films like $Al_2O_3$, $TiO_2$, $HfO_2$ were deposited on Si, $SiO_2$/Si, GaAs wafers, and then the thermal conductivity was measured by using thermo-reflectance method which utilizes the reflectance variation of the film surface produced by the periodic temperature variation. The result shows that high-k oxide films with 50 nm thickness have high thermal conductivity of 0.80~1.29 W/(mK). Therefore, effectively dissipate the heat generated in the electric circuit such as CMOS memory device, and the heat transfer changes according to the micro grain size.

• Journal of Satellite, Information and Communications
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• v.10 no.3
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• pp.89-93
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• 2015

Ion-beam irradiation(IB) on $HfO_2$ surface induced high-performance liquidcrystal(LC) driving at a 1-V threshold with vertical alignment of liquid crystals(LC). The high-k materials Atomic layer deposition was used to obtain LC orientation on ultrathin and high-quality films of $HfO_2$ layers. To analyze surface morphological transition of $HfO_2$ which can act as physical alignment effect of LC, atomic force microscopy images are employed with various IB intensities. The contact angle was measured to elucidate the mechanism of vertical alignment of LC on $HfO_2$ with IB irradiation. Contact angle measurement show the surface energy changes via IB intensity increasing.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.152-153
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• 2012

Ion sensitive field effect transistor (ISFET)는 전해질 속 각종 이온농도를 측정하는 반도체 이온 센서이다. 이 소자의 기본 구조는 metal oxide semiconductor field effect transistor (MOSFET)에서 고안되었으며 게이트 컨택 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다 [1]. ISFET는 기존의 반도체 CMOS 공정과 호환이 가능하고 제작이 용이할 뿐만 아니라, pH용액에 대한 빠른 반응 속도, 비표지 방식의 생체물질 감지능력, 낮은 단가 및 소자의 집적이 용이하다는 장점을 가지고 있다. ISFET pH센서의 감지특성에 결정하는 요소 중 가장 중요한 것은 소자의 감지막이라고 할 수 있다. 감지막은 감지 대상 물질과 물리적으로 직접 접촉되는 부분으로서 일반적으로 기계적/화학적 강도가 우수한 실리콘 산화막(SiO2)이 많이 사용되어져 왔다. 최근에는 기존의 SiO2 보다 성능이 향상된 감지막을 개발하기 위하여 Al2O3, HfO2, ZrO2, 그리고 Ta2O5와 같은 고유전 상수(high-k)를 가지는 물질들을 EIS 센서의 감지막으로 이용하는 연구가 활발하게 진행되고 있다. 하지만 지속적인 high-k 물질들에 대한 연구에도 불구하고 각각의 물질이 갖는 한계점이 드러났다. 본 연구에서는 SOI기판에서 SiO2 /HfO2 (OH), SiO2/Al2O3 (OA) 이단 적층 그리고 SiO2/HfO2/Al2O3 (OHA) 삼단적층 감지막을 갖는 ISFET을 제작하고 각 감지막의 특성을 평가하였다. 평가된 특성의 결과가 아래의 표1에 요약되었다. 그 결과, 각 high-k 물질이 갖는 한계점을 극복하기 위하여 제안된 OHA감지막은 기존에 OH, OA가 갖는 장점을 취하면서 단점을 최소화 시키는 최적화된 감지막의 감지특성을 보였다.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.16-16
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• 2002

The presently commercialized lithium-ion batteries use layer structured LiCoO₂ cathodes. Because of the high cost and toxicity of cobalt, an intensive search for new cathode materials has been underway in recent years. Recently, a concept of a one-to-one solid state mixture of LiNO₂ and LiMnO₂, i.e., Li[Ni/sub 0.5/Mn/sub 0.5/]O₂, was adopted by Ohzuku and Makimura to overcome the disadvantage of LiNiO₂ and LiMnO₂. Li[Ni/sub 0.5/Mn/sub 0.5/]O₂ has the -NaFeO₂ structure, which is characteristic of the layered LiCoO₂ and LiNiO₂ structures and shows excellent cycleability with no indication of spinel formation during electrochemical cycling. Layered Li[Ni/sub x/Co/sub 1-2x/Mn/sub x/]O₂ (x = 0.5 and 0.475) materials with high homogeneity and crystallinity were synthesized using a mechanical alloying method. The Li[Ni/sub 0.475/Co/sub 0.05/Mn/sub 0.475/]O₂ electrode delivers a high discharge capacity of 187 mAh/g between 2.8 and 4.6 V at a high current density of 0.3 mA/㎠(30 mA/g) with excellent cycleability. The charge/discharge and differential capacity vs. voltage studies of the Li[Ni/sub x/Co/sub 1-2x/Mn/sub x/]O₂ (x = 0.5 and 0.475) materials showed only one redox peak up to 50 cycles, which indicates that structural phase transitions are not occurred during electrochemical cycling. The magnitude of the diffusion coefficients of lithium ions for Li[Ni/sub x/Co/sub 1-2x/Mn/sub x/]O₂(x = 0.5 and 0.475) are around 10/sup -9/ ㎠/s measured by the galvanostatic intermittent titration technique (GITT).

• Bulletin of the Korean Chemical Society
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• v.19 no.8
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• pp.856-862
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• 1998

Vanadium oxide catalyst supported on ZrO2-WO3 was prepared by adding the Zr(OH)4 powder into a mixed aqueous solution of ammonium metavanadate and ammonium metatungstate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using solid-state 51V NMR and FTIR. In the case of calcination temperature at 773 K, for the samples containing low loading V2O5 below 18 wt % vanadium oxide was in a highly dispersed state, while for samples containing high loading V2O5 equal to or above 18 wt % vanadium oxide was well crystallized due to the V2O5 loading exceeding the formation of monolayer on the surface of ZrO2-WO3. The ZrV2O7 compound was formed through the reaction Of V2O5 and ZrO2 at 873 K and the compound decomposed into V2O5 and ZrO2 at 1073 K, which were confirmed by FTIR and 51V NMR.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.237-242
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• 1998

A transparent and colorless $80SiO_2-20TiO_2$(mol%) thin films on soda-lime-silica slide glass and sapphire substrate were obtained by spin-coating technique using tetraethyl orthosilicate and titanium trichloride as starting materials. The prepared film annealed at $750^{\circ}C$ showed a high transmittance and a low reflectance. For the $SiO_2-TiO_2$ films on slide glasses, a strong interaction between the sodium ion and oxygens is properbly the origin of the good stability to the high temperature and the high humidity.