• Title/Summary/Keyword: high $O_2$

Search Result 12,444, Processing Time 0.042 seconds

Fabrication of High Refractive Index ZrO2 Thin Film by a Layer-by-layer Self-assembly Method (LBL-SA법을 이용한 고굴절률 ZrO2 박막 제조)

  • Choi, Chang-Sik;Lee, Ji-Sun;Lee, Mi-Jai;Lee, Young-Jin;Jeon, Dae-Woo;Ahn, Byoung-Jo;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.30 no.4
    • /
    • pp.199-203
    • /
    • 2017
  • $ZrO_2/PSS$ thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated $ZrO_2/PSS$ thin films were measured as a function of the number of $(ZrO_2/PSS)n$. As the number of $(ZrO_2/PSS)n$ increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The $ZrO_2$ thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated $(ZrO_2/PSS)_{15}$ thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a $(ZrO_2/PSS)_{15}$ thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.

High Temperature Thermal Conductivities in La2Ce2O7−Gd2Ce2O7−Y2Ce2O7 Pyrochlore System for Thermal Barrier Coatings (열차폐코팅용 La2Ce2O7−Gd2Ce2O7−Y2Ce2O7 Pyrochlore계의 고온 열전도도)

  • Yoon, So-Young;Lee, Sung-Min;Shim, Kwang-Bo;Kim, Hyung-Tae
    • Journal of the Korean Ceramic Society
    • /
    • v.44 no.7
    • /
    • pp.387-392
    • /
    • 2007
  • Thermal conductivities in $La_2Ce_2O_7-Gd_2Ce_2O_7-Y_2Ce_2O_7$ ternary system have been investigated. Pyrochlore phases formed at all ternary compositions and their sinterbilities were decreased with La addition. Thermal conductivities showed a minimum value at $La_2Ce_2O_7$ with moderate increases as $Y^{3+}$ and $Gd^{3+}$ ions replaced $La^{3+}$. Thermal expansion anomaly observed in $La_2Ce_2O_7$, which might be detrimental to TBC application, were suppressed by $Y^{3+}$ and $Gd^{3+}$ additions, with resultant thermal conductivities, $1.3{\sim}1.5 W/mK$ at $1000^{\circ}C$.

Semiconductor type micro gas sensor for $H_2$ detection using a $SnO_2-Ag_2O-PtO_x$ system by screen printing technique (스크린 프린팅 기법을 이용한 $SnO_2-Ag_2O-PtO_x$계 반도체식 마이크로 수소 가스센서에 관한 연구)

  • Kim, Il-Jin;Han, Sang-Do;Lee, Hi-Deok;Wang, Jin-Suk
    • Transactions of the Korean hydrogen and new energy society
    • /
    • v.17 no.1
    • /
    • pp.69-74
    • /
    • 2006
  • Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

Effect of Minor Additives on the MgO Creep (MgO의 고온 Creep에 미치는 미량 첨가물의 영향)

  • Kim, Hwan
    • Journal of the Korean Ceramic Society
    • /
    • v.14 no.3
    • /
    • pp.182-186
    • /
    • 1977
  • Compression creep of polycrystalline magnesia at about 1$600^{\circ}C$ under 5-40kg/$\textrm{cm}^2$ was examined, and also the effects on it of minor additives such as B2O3, CaO and SiO2 were examined. The high temperature creep of high purity magnesia was primarily controlled by the Nabarro-Herring type lattice diffusion of Mg in magnesia. B2O3 was included in the molten state and showed on increasing B2O3 contents. Some of the CaO and SiO2 were also included in the molten state, promoted the grain boundary sliding, so that creep rate was increased with an increasing content of them.

  • PDF

Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD

  • Kim, Jin-Yong;Choi, Yong-June;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.19 no.2
    • /
    • pp.73-78
    • /
    • 2012
  • The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at $600^{\circ}C$ under $10^{-10}$ Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.

Growth of TiO$_2$(rutile) single crystals by FZ method under high oxygen pressure (고산소압의 적용에 따른 양질의 루틸상 TiO$_2$ 단결정 성장)

  • ;;;Iso Tanaka
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.11 no.3
    • /
    • pp.85-88
    • /
    • 2001
  • High oxygen pressure has been applied for a floating zone (FZ) crystal grower in order to grow high quality $TiO_2$(rutile) single crystals suitable for optical application. The $TiO_2$ crystals, grown under 0.3, 0.4, 0.5, and 0.8MPa oxygen pressure respectively, are all transparent and dark blue. The degree of the presence of sub-grain boundary in the crystal differs from the applied oxygen pressure. In particular, $TiO_2$ single crystals grown under0.5 MPa showed sub-grain boundary-free and estimated good for optical devices.

  • PDF

High density plasma etching of novel dielectric thin films: $Ta_{2}O_{5}$ and $(Ba,Sr)TiO_{3}$

  • Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.11 no.5
    • /
    • pp.231-237
    • /
    • 2001
  • Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

  • PDF

Polarity-tuned Gel Polymer Electrolyte Coating of High-voltage LiCoO2 Cathode Materials

  • Park, Jang-Hoon;Cho, Ju-Hyun;Kim, Jong-Su;Shim, Eun-Gi;Lee, Yun-Sung;Lee, Sang-Young
    • Journal of the Korean Electrochemical Society
    • /
    • v.14 no.2
    • /
    • pp.117-124
    • /
    • 2011
  • We demonstrate a new surface modification of high-voltage lithium cobalt oxide ($LiCoO_2$) cathode active materials for lithium-ion batteries. This approach is based on exploitation of a polarity-tuned gel polymer electrolyte (GPE) coating. Herein, two contrast polymers having different polarity are chosen: polyimide (PI) synthesized from thermally curing 4-component (pyromellitic dianhydride/biphenyl dianhydride/phenylenediamine/oxydianiline) polyamic acid (as a polar GPE) and ethylene-vinyl acetate copolymer (EVA) containing 12 wt% vinyl acetate repeating unit (as a less polar GPE). The strong affinity of polyamic acid for $LiCoO_2$ allows the resulting PI coating layer to present a highly-continuous surface film of nanometer thickness. On the other hand, the less polar EVA coating layer is poorly deposited onto the $LiCoO_2$, resulting in a locally agglomerated morphology with relatively high thickness. Based on the characterization of GPE coating layers, their structural difference on the electrochemical performance and thermal stability of high-voltage (herein, 4.4 V) $LiCoO_2$ is thoroughly investigated. In comparison to the EVA coating layer, the PI coating layer is effective in preventing the direct exposure of $LiCoO_2$ to liquid electrolyte, which thus plays a viable role in improving the high-voltage cell performance and mitigating the interfacial exothermic reaction between the charged $LiCoO_2$ and liquid electrolytes.

Characteristic of Ru Thin Film Deposited by ALD

  • Park, Jingyu;Jeon, Heeyoung;Kim, Hyunjung;Kim, Jinho;Jeon, Hyeongtag
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.78-78
    • /
    • 2013
  • Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

  • PDF

Lipofectamine-2000 Assisted Magnetofection to Fibroblast Cells Using Polyethyleneimine-Fe3O4@SiO2 Nanoparticles

  • Jang, Eue-Soon;Park, Kyeong-Soon
    • Bulletin of the Korean Chemical Society
    • /
    • v.33 no.8
    • /
    • pp.2567-2573
    • /
    • 2012
  • We successfully synthesized $Fe_3O_4@SiO_2$ nanoparticles with ultrathin silica layer of $1.0{\pm}0.5$ nm that polyethyleneimine (PEI) with low molecular weight of 2.0-4.0 kDa was covalently conjugated with the resulting $Fe_3O_4@SiO_2$ nanoparticles by silane coupling reaction. The PEI-$Fe_3O_4@SiO_2$ nanoparticles were further used as gene delivery vector for a human fibroblast cell (IMR-90) line. Gene transfection efficiency of the PEI-$Fe_3O_4@SiO_2$ complexes did not increase remarkably after magnetofection; however, the addition of Lipofectamine 2000 significantly increased the transfection efficiency of the PEI-$Fe_3O_4@SiO_2$ complexes. We believe that the present approach could be utilized for magnetofection as alternative to $Fe_3O_4$ nanoparticles conjugated with the PEI of high molecular weight thanks to its relatively low cytotoxicity and high transfection efficiency.