• Title/Summary/Keyword: heterostructures

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Magneto-optical Measurements of Semiconductor Quantum Structures in Pulsed-magnetic Fields

  • Kim, Yongmin
    • Applied Science and Convergence Technology
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    • v.23 no.1
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    • pp.1-13
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    • 2014
  • Semiconductor quantum structures are often characterized by their energy gaps which are modified by the quantum size effect. Energy levels in semiconductors can be realized by optical transitions within confined structures. Photoluminescence spectroscopy in magnetic fields at low temperatures has proved to be a powerful technique for investigating the electronic states of quantum semiconductor heterostructures and offers a complimentary tool to electrical transport studies. In this review, we examine comprehensive investigations of magneto-excitonic and Landau transitions in a large variety of undoped and doped quantum-well structures. Strong magnetic fields change the diamagnetic energy shift of free excitons from quadratic to linear in B in undoped single quantum well samples. Two-dimensional electron gas induced by modulation doping shows pronounce quantum oscillations in integer quantum Hall regime and discontinuous transition at ${\nu}=1$. Such discontinuous transition can be explained as the formation of spin waves or Skyrmions.

Quantum Mechanical Analysis for the Numerical Calculation of Two-Dimensional Electron Gas(2DEG) (2 차원 전자개스(2DEG)의 수치적 연산을 위한 양자역학적 분석)

  • 황광철;김진욱;류세환;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.441-444
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    • 1999
  • This paper analyzed arbitrary Energy band profile heterostructures by solving Schrodinger\`s equation the Poisson's equation self-consistently. Four different concentrations positively ionized donors holes in the valence band free electrons in the conduction band and 2DEG are taken to account for the whole system. 2DEG from both of the structures are obtained and compared with the data available in the literatures. Differential capacitances are also calculated from the concentration profiles obtained. Finally theoretical predictions for both of 2DEGs and the capacitances show good agreement with the experimental data referred in this study.

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Capacitance-voltage characteristics of ZnO/GaN heterostructures (ZnO/GaN 이종접합구조의 capacitance-voltage 특성에 관한 연구)

  • Oh, Dong-Cheol;Han, Chang-Suk;Koo, Kyung-Wan;Jung, Soon-Won
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.148-149
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    • 2006
  • Capacitance-voltage(C-V) 측정평가를 통하여 ZnO/GaN 이종접합구조의 전기적인 특성을 조사한다. 실온에서 10kHz의 주파수에서 얻은 ZnO/GaN의 이종접합구조에 대한 C-V 측정결과는 이종접합계면에서 고밀도의 전자가 축적되어 있음을 나타낸다. 이것은 ZnO/GaN 이종접합계면의 다른 재료에서 볼 수 없는 큰 전도대불연속에 기인한 것인데, 각각의 층의 전도도을 제어함으로 이종접합계면에 축적되는 전자밀도를 ${\sim}10^{19}cm^{-3}$까지 증가시킬 수 있다. 따라서 ZnO/GaN 이종접합구조는 이종접합(合)트래지스터로서 유망한 재료로 판단된다.

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An Alternative X-ray Diffraction Analysis for Comprehensive Determination of Structural Properties in Compositionally Graded Strained AlGaN Epilayers

  • Das, Palash;Jana, Sanjay Kumar;Halder, Nripendra N.;Mallik, S.;Mahato, S.S.;Panda, A.K.;Chow, Peter P.;Biswas, Dhrubes
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.784-792
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    • 2018
  • In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

The Electronic Structures and Magnetism of Monolayer Fe on CuGaSe2(001)

  • Jin, Ying-Jiu;Lee, Jae-Il
    • Journal of Magnetics
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    • v.12 no.2
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    • pp.59-63
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    • 2007
  • Ferromagnet/Semiconductor heterostructures have attracted much attention because of their potential applications in spintronic devices. We investigated the electronic structures and magnetism of monolayer Fe on $CuGaSe_2(001)$ by using the all-electron full-potential linearized augmented plane-wave method within a generalized gradient approximation. We considered the monolayer Fe deposited on both the CuGa atoms terminated (CuGa-Term) and the Se atom terminated (Se-Term) surfaces of $CuGaSe_2(001)$. The calculated magnetic moment of the Fe atom on the CuGa-Term was about $2.90\;{{\mu}_B}$. Those of the Fe atoms on the Se-Term were in the range of $2.85-2.98\;{{\mu}_B}$. The different magnetic behaviors of the Fe atoms on two different surfaces were discussed using the calculated layer-projected density of states.

Integer and fractional quantum Hall effect in graphene heterostructure

  • Youngwook Kim
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.1
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    • pp.1-5
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    • 2023
  • The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.

Recent Advances in Preparation and Supercapacitor Applications of Lignin-Derived Porous Carbon: A Review

  • Hae Woong Park;Hyo-Jun Ahn;Kwang Chul Roh
    • Journal of Electrochemical Science and Technology
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    • v.15 no.1
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    • pp.111-131
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    • 2024
  • Lignin-derived porous carbon has been identified as a versatile electrode material for supercapacitors (SCs) in energy storage systems (ESSs) owing to their intrinsic advantages including good electrical conductivity, low cost, high thermal and chemical stability, and high porosity, which stem from high surface, appropriate pore distribution, tailored morphologies, heterostructures, and diverse derivates. In this review, to provide a fundamental understanding of the properties of lignin, we first summarize the origin, historical development, and basic physicochemical properties. Next, we describe essential strategies for the preparation of lignin-derived porous carbon electrode materials and then highlight the latest advances in the utilization of lignin-derived porous carbon materials as advanced electrode materials. Finally, we provide some of our own insights into the major challenges and prospective research directions of lignin-derived porous carbon materials for supercapacitors. We believe that this review will provide general guidance for the design of next-generation electrode materials for supercapacitors.

Mechanical removal of surface residues on graphene for TEM characterizations

  • Dong-Gyu Kim;Sol Lee;Kwanpyo Kim
    • Applied Microscopy
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    • v.50
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    • pp.28.1-28.6
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    • 2020
  • Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.