• Journal of Sensor Science and Technology
• /
• v.31 no.6
• /
• pp.383-388
• /
• 2022

Currently, photodetectors are being extensively studied and developed for next-generation applications, such as in autonomous vehicles and image sensors. In this regard, all-inorganic metal halide perovskite (CsPbX₃; X = Cl, Br, and I) nanocrystals (NCs) have emerged as promising building blocks for various applications owing to their high absorption coefficients, tunable bandgaps, high defect tolerances, and solution processability. These features, which are typically required for the development of advanced optoelectronics, can be engineered by modifying the chemical compositions and surface chemistry of the NCs. Herein, we briefly review various strategies adopted for the application of CsPbX₃ perovskite NCs in photodetectors and for improving device performance. First, modifications of the chemical compositions of CsPbX₃ NCs to tune their optical bandgaps and improve the charge-transport mechanism are discussed. Second, the application of surface chemistry to improve oxidation resistance and carrier mobility is described. In the future, perovskite NCs with prospective features, such as non-toxicity and high resistance to external stimuli, are expected to be developed for practical applications.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.4
• /
• pp.51-57
• /
• 2008

In this paper, wetting and interfacial reaction properties for low Ag containing Sn-Ag-Cu Pb-free solder alloy, i.e., Sn-0.3Ag-0.7Cu were investigated and compared with those of Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu. Melting behavior and stress-strain curves of some Sn-xAg-xCu alloys were also measured using a differential scanning calorimeter(DSC) and a tensile test machine, respectively. In order to enhance insufficient wetting properties of Sn-0.3Ag-0.7Cu alloy, the improvement of wetting properties were analyzed by applying fluxes containing higher content of halide or indium adding of 0.2wt.% into the solder alloy. It was concluded that the small addition of indium is more effective for the improvement of wettability in low temperature range of $230{\sim}240^{\circ}C$ than applying flux containing higher content of halide.

• Bulletin of the Korean Chemical Society
• /
• v.24 no.5
• /
• pp.583-592
• /
• 2003

The gas phase identity nucleophilic substitution reactions of halide anions (X = F, Cl, Br) with cyclopentadienyl halides (1) are investigated at the B3LYP/6-311+G**, MP2/6-311+G** and G2(+)MP2 levels involving five reaction pathways: σ-attack $S_N2$, β-$S_N$2'-syn, β-$S_N$2'-anti, γ-$S_N$2'-syn and γ-$S_N$2'-anti paths. In addition, the halide exchange reactions at the saturated analogue, cyclopentyl halides (2), and the monohapto circumambulatory halide rearrangements in 1 are also studied at the same three levels of theory. In the σ-attack $S_N2$ transition state for 1 weak positive charge develops in the ring with X = F while negative charge develops with X = Cl and Br leading to a higher energy barrier with X = F but to lower energy barriers with X = Cl and Br than for the corresponding reactions of 2. The π-attack β-$S_N$2' transition states are stabilized by the strong $n_C-{\pi}^{*}_{C=C}$ charge transfer interactions, whereas the π-attack γ-$S_N$2' transition states are stabilized by the strong $n_C-{\sigma}^{*}_{C-X}$ interactions. For all types of reaction paths, the energy barriers are lower with X = F than Cl and Br due to the greater bond energy gain in the partial C-X bond formation with X = F. The β-$S_N$2' paths are favored over the γ-$S_N$2' paths only with X = F and the reverse holds with X = Cl and Br. The σ-attack $S_N2$ reaction provides the lowest energy barrier with X = Cl and Br, but that with X = F is the highest energy barrier path. Activation energies for the circumambulatory rearrangement processes are much higher (by more than 18 kcal $mol^{-1}$) than those for the corresponding $S_N2$ reaction path. Overall the gas-phase halide exchanges are predicted to proceed by the σ-attack $S_N2$ path with X = Cl and Br but by the β-$S_N$2'-anti path with X = F. The barriers to the gas-phase halide exchanges increase in the order X = F < Br < Cl, which is the same as that found for the gas-phase identity methyl transfer reactions.

• Proceedings of the Korean Society of Radiological Science
• /
• 1992.10a
• /
• pp.109-110
• /
• 1992

• Journal of Photoscience
• /
• v.3 no.3
• /
• pp.163-165
• /
• 1996

• Bulletin of the Korean Chemical Society
• /
• v.16 no.3
• /
• pp.285-287
• /
• 1995

• Journal of the Korean Ceramic Society
• /
• v.44 no.3 s.298
• /
• pp.142-146
• /
• 2007

High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{\sim}900^{\circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.58 no.4
• /
• pp.756-762
• /
• 2009

This paper proposes a high efficient Dual Buck Inverter design with a zero voltage switching (ZVS) control technique. The ZVS control is realized by adding a feedback loop circuit which is implemented by simple RS latch and TTL gate. The used load was 200W -Ceramic Metal Halide Lamp. The experimental results show that the proposed Inverter system could avoid the acoustic resonance and achieve high efficiency by Zero Voltage Switching.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2009.10a
• /
• pp.181-183
• /
• 2009

This paper proposes a programmed ignition method of high frequency electronic ballast for metal halide lamp. The method precisely controls the ignition voltage and prevents possible damage of ballast for abnormal lamp operation or lamp failure, also sures the zero voltage switching. This improved performance for igniting the lamp enables reliable product of high frequency ballast because of high efficiency, fast start and no extra ignitor.

• Journal of Photoscience
• /
• v.1 no.1
• /
• pp.63-66
• /
• 1994

Silver chlorobromoiodide cubic seed emulsion was prepared'in the presence of ammonia and phenylcarbamyl gelatin solution. When benzenethiosulfonate sodium salt (BTS) and 4-hydroxy6-methyl-1,3,3a,7-tetraazaindene (TAI), as growth modifiers, were added in the seed emulsion, the silver halide microcrystals were obtained in the forms of cubo-octahedrons, octahedrons, rhombic dodecahedron by variation of pAg value through controlled double jet. The crystal habits and shapes were determined by means of X-ray diffraction (D/MAX BIB, Rigaku) and electron microscopy (JSM-840, JEOL), respectively.