• Nuclear Engineering and Technology
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• v.47 no.4
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• pp.479-487
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• 2015

The thallium-doped sodium iodide [NaI(Tl)] scintillation detector is preferred as a gamma spectrometer in many fields because of its general advantages. A silicon photomultiplier (SiPM) has recently been developed and its application area has been expanded as an alternative to photomultiplier tubes (PMTs). It has merits such as a low operating voltage, compact size, cheap production cost, and magnetic resonance compatibility. In this study, an array of SiPMs is used to develop an NaI(Tl) gamma spectrometer. To maintain detection efficiency, a commercial NaI(Tl) $2^{\prime}{\times}2^{\prime}$ scintillator is used, and a light guide is used for the transport and collection of generated photons from the scintillator to the SiPMs without loss. The test light guides were fabricated with polymethyl methacrylate and reflective materials. The gamma spectrometer systems were set up and included light guides. Through a series of measurements, the characteristics of the light guides and the proposed gamma spectrometer were evaluated. Simulation of the light collection was accomplished using the DETECT 97 code (A. Levin, E. Hoskinson, and C. Moison, University of Michigan, USA) to analyze the measurement results. The system, which included SiPMs and the light guide, achieved 14.11% full width at half maximum energy resolution at 662 keV.

• Korean Journal of Environmental Agriculture
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• v.11 no.3
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• pp.209-214
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• 1992

Residue of Propineb in Sesame(Sesamum indicum L.) seed was determined to establish an index for the safety use of Propineb to Sesame. Evaluation was made on residual concentration of Propineb in Sesame seed as a function of application frequency and date when the mixed formulations of Propineb(56%), protectant fungicide, and Oxadixyl(8%), contact fungicide, were sprayed into Sesame leaves. Level of Propineb treatment was $0.028g/m^2$ with various combinations of application time from three to sixty days before harvest. Results are summarized as followings. 1. Recovery percentages of Propineb from Sesame seed were ranged from 84 to 96, and the minimum detectable limit of Propineb with the method employed in this experiment was 0.03mg/kg. 2. Residues of Propineb in Sesame seed were in the ranges of 0.14 to 1.38mg/kg, varying with frequency and date of Propineb application. 3. Residues of Propineb increased as increasing application frequency of Propineb or as being application date closer to harvest time. 4. Residue of Propineb in Sesame seed was decreased with time, showing to be fitted to the first-order kinetics. 5. Residues of Propineb in Sesame seen were, irresepective of treatments, lower than 2mg/kg, the Maximum Residue Limit(MRL) established by FAO/WHO. 6. Half-life of Propineb determined in this experiment was ranged from 12 to 16 days.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.40 no.1
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• pp.9-16
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• 2004

Parapenaeopsis tenella occurs widely on the south and west coasts of Korea. Sex ratio showed seasonal variations, with a mean value of 48.6% for the females. The species produces one cohort a year, with the ovaries ripening from July to August. Insemination took place from July to August, as more than half of the females sampled in the study over 14 mm CL were inseminated. Gonadosomatic index (GSI) reached the maximum between July and August. The smallest mature female was 11 mm CL. Size at 50% sexual maturity ($CL_{50}$), determined from both mature females and inseminated females, was 12.53 mm and 12.28 mm CL, respectively. The life span of females appeared to be 14-15 months according to size frequency distributions, while that of the male was 13-14 months. Population growth was estimated by the modified von Bertalanffy growth function incorporating seasonal variation in growth. Based on the growth parameters (K = 1.22 $yr^{-1}$ and $L_{\infty}$ = 21.99 mm CL for females, and K = 2.00 $yr^{-1}$ and $L_{\infty}$ = 15.00 mm CL for males) growth curves showed that females grew faster and reached a larger size at age than males.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.56-61
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• 2015

The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at $1000^{\circ}C$ and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epi-layer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at $1000^{\circ}C$, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at $1000^{\circ}C$ and V/III ratio = 10 showed the lowest value FWHM for RC of a-plane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1202-1207
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• 2003

Using a recently developed Hybric Plasma-Particle Accelerating Impact Deposition (HP-PAID) process, synthesis of nanostructured silicon coatings has been investigated by injecting vapor-phase TEOS (tetraethosysilane, (C$_2$H$\_$5/O)$_4$Si) into an Ar hybrid plasma. The plasma jet with reactants was expanded through nozzle into a deposition chamber, with the pressure dropping from 700 to 10 torr. Ultrafine particles accelerated in the free jet downstream of the nozzle, deposited by an inertial impaction onto a temperature controlled substrate. By using this process, nanostructured amorphous silicon coatings with grain size smaller than 10 nm could be synthesized. These samples were annealed in an Ar and crystallized at 900$^{\circ}C$ for 30 min. TEM analysis showed that the annealed coatings were also composed of nanoparticles smaller than 10 nm, which showed a good consistency that the average grain size of 7 nm was also estimated from a peak shift of 2.39 cm$\^$-1/ and Full Width at Half Maximum (FWHM) 5.92 cm$\^$-1/ of Raman analysis. The noteworthy is that a strong PL peak at 398 nm was also obtained for this sample, which indicates that the deposited coatings also contained 3∼4 nm nanostructured grains.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.7
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• pp.293-299
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• 2003

In this paper, we have proposed a high conversion and isolation characteristic V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While most of the sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on a sub-harmonic mixer with APDP(anti-parallel diode pair) and the 0.1 ${\mu}{\textrm}{m}$ PHEMT's (pseudomorphic high electron mobility transistors). Lumped elements at IF port provide better selectivity of IF frequency and increase isolation. Maximum conversion gain of 0.8 ㏈ at a LO frequency of 14.5㎓ and at a RF frequency of 60.4 ㎓ is measured. Both LO-to-RF and LO-to-IF isolations are higher than 50 ㏈. The conversion gain and isolation characteristic are the best performances among the reported quadruple sub-harmonic mixer operating in the V-band millimeter wave frequency thus far.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.6-13
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• 2010

In this study, Ga-doped ZnO (GZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperatures $100{\sim}400^{\circ}C$ and thin film thickness by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the GZO thin films. It is observed that all the thin films exhibit c-axis orientation and a (002) diffraction peak only. The GZO thin films, which were deposited at $T=300^{\circ}C$ and 400 nm, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.4^{\circ}$. AFM analysis shows that the formation of relatively smooth thin films are obtained. The lowest resistivity ($8.01{\times}10^{-4}\;{\Omega}cm$) and the highest carrier concentration ($3.59{\times}10^{20}\;cm^{-3}$) are obtained in the GZO thin films deposited at $T=300^{\circ}C$ and 400 nm. The optical transmittance in the visible region is approximately 80 %, regardless of process conditions. The optical band-gap shows the slight blue-shift with increase in doping which can be explained by the Burstein-Moss effect.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.15-20
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• 2007

We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.

• Biomedical Science Letters
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• v.11 no.2
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• pp.165-173
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• 2005

A potent demethylating agent, 5-Azacytidine (5-AzaC) has been widely used as in many studies on DNA methylation, regulation of gene expression, and cancer biology. The mechanisms of the demethylating activity were known to be formation of complex between DNA and DNA methyltransferase (MTase), which depletes cellular MTase activity. However, 5-AzaC can also induce hypermethylation of a transgene in a transgenic cell line, G12 cells and it was explained as a result of defense mechanisms to inactivate foreign gene(s) somehow. This finding evoked the question that whether the phenomenon of hypermethylation induced by 5-AzaC is limited to the transgene or it can be occurred in endogenous gene(s). In order to answer the question, mutagenicity test of 5-AzaC and molecular characterization of mutants obtained from the test were performed using an endogenous gene, thymidine kinase (tk) in Chinese hamster V79 cells. When V79 and V79-J3 subclone cells were treated with 1, 2.5 ,5, $10{\mu}M$ of 5-AzaC for 48 hours, their maximum mutant frequencies were revealed as $6\times10^{-3}\;at\;5{\mu}M$(350-fold induction over background) and $8\times10^{-3}\;at\;2.5{\mu}M$ (l,800-fold induction over background) respectively. Since the induction rates were too high to be induced by true mutations, many trifluorothymidine (TFT)-resistant $(TFT^R)$ cells were subjected to Northern blot analysis to check the presence of tk transcripts. Surprisingly, all clones tested possessed the transcripts in a similar level, that implicates the $TFT^R$ phenotype induced by 5-AzaC has not given rise to hypermethylation of the gene in spite of unusually high mutation frequency. In addition, it has shown that the TK activity in the pool of 5-AzaC-induced $TFT^R$ cells has about a half of that in spontaneously-induced $TFT^R$ cells or in non-selected parental V79-J3 cells. This result suggests that the mechanism(s) underlying the TFT-resistance between spontaneously occurred and 5-AzaC-induced cells may be different. These findings have shown that the $TFT^R$ phenotype induced by 5-AzaC has not given rise to hypermethylation of the tk gene, and 5-AzaC may be induced by one or combined pathways among many drug resistance mechanisms. The exact mechanisms for the 5-AzaC-induced $TFT^R$ phenotype remain to elucidate.