1 |
X. Yu, J. Ma, F. Ji, Y. Wang, C. Cheng, H. Ma, 'Thickness dependence of properties of ZnO:Ga films deposited by rf magnetron sputtering', applied. surface. science, vol. 245, pp. 310-315, 2005.
DOI
ScienceOn
|
2 |
J. H. Park, J. M. Shin, S. Y. Cha, J. W. Park, S. E. Jeong, 'Deposition-Temperature Effects on AZO thin Films Prepared by RF Magnetron Sputtering and Their Physical Properties', J. Korean. Phys. Soc, vol. 49, pp. 584-588, 2006.
ScienceOn
|
3 |
J. J. Robbins, J. Harvey, J. Leaf, C. Fry, C. A. Wolden, 'Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma-enhanced chemical vapor deposition', Thin Solid Films, vol. 473, pp. 35-40, 2005.
DOI
ScienceOn
|
4 |
H. H. Shin, S. J. Kang, Y. S. Yoon, 'Optical and Electrical Properties of Al-doped ZnO Thin Films Fabricated by Sol-gel Method with Various Al Doping Concentrations and Annealing Temperatures', 대한전자공학회, 제 44 권 SD 편 제 5 호, 2007
|
5 |
Q. B. Ma, Z. Z. Ye, H. P. He, L. P. Zhu, W. C. Liu, Y. F. Yang, L. Gong, J. Y. Huang, Y. Z. Zhang, B. H. Zhao, 'Highly near-infrared reflecting and transparent conducting ZnO : Ga films : substrate temperature effect' J. Phys. D: Appl. Phys, vol. 41, pp. 055302, 2008.
DOI
ScienceOn
|
6 |
S. S. Lin, J. L. Huang, D. F. Lii, 'The effect of thickness on the properties of Ti-doped ZnO films by simultaneous r.f. and d.c. magnetron sputtering', Surf. Coat. Tech, vol. 190, pp. 372-377, 2005.
DOI
ScienceOn
|
7 |
Q. B. Ma, Z. Z. Ye, H. P. He, L. P. Zhu, J. R. Wang, B. H. Zhao, 'Influence of Ar/O2 ratio on the properties of transparent conductive ZnO: Ga films prepared by DC reactive magnetron sputtering', materials letters, vol. 61, pp. 2460-2463, 2007
DOI
ScienceOn
|
8 |
A. R. Babar, P. R. Deshamukh1, R. J. Deokate1, D. Haranath, C. H. Bhosale1, K Y Rajpure, 'Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis', J. Phys. D: Appl. Phys, vol. 41, pp. 135404, 2008.
|
9 |
B. Z. Dong, G. J. Fang, J. F. Wang, W. J. Guan, X. Z. Zhao, 'Effect of thickness on structural. electrical, and optical properties of ZnO:Al films deposited by pulsed laser deposition', J. Appl. Phys, vol. 101, pp. 033713, 2007.
DOI
ScienceOn
|
10 |
F. K. Shan, B. I. Kim, G. X. Liu, J. Y. Sohn, W. J. Lee, B. C. Shin, Y. S. Yu, 'Blueshift of near band edge emission in Mg doped ZnO thin films and aging', J. Appl. Phys, vol. 95, pp. 4772-4775, 2004.
DOI
ScienceOn
|
11 |
Q. B. Ma, Z. Z. Ye, H. P. He, L. P. Zhu, J. R. Wang, B. H. Zhao, 'Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering', J. Crystal. growth, vol. 304, pp. 64-68, 2007.
DOI
ScienceOn
|
12 |
S. Liang, X. Bi, 'Structure, conductivity, and transparency of Ga-doped ZnO thin films arising from thickness contributions', J. Appl. Phys, vol. 104, pp. 113533, 2008.
DOI
ScienceOn
|
13 |
X. Chen, W. Guan, G. Fang, X. Z. Zhao, 'Influence of substrate temperature and post-treatment on the properties of ZnO:Al thin films prepared by pulsed laser deposition', applied. surface. science, vol. 252, pp. 1561-1567, 2005.
DOI
ScienceOn
|
14 |
K. H. Kim, K. C. Park, D. Y. Ma, 'Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering', J. Appl. Phys, vol. 81, pp. 7764-7772, 1997.
DOI
ScienceOn
|
15 |
B. D. Ahn, S. H. Oh, C. H. Lee, G. H. Kim, H. J. Kim, S. Y. Lee, 'Influence of annealing ambient on Ga-doped ZnO thin films', J. Crystal Growth, vol. 309, pp. 128-133, 2007
DOI
ScienceOn
|
16 |
S. J. Lee, H. W. Yoon, B. S. Kim, S. G. Lee, M. W. Park, D. J. Kwak, 'Characterization of ZnO:Al Transparent Conduction Films produced by DC Magnetron Sputtering Method', 대한금속․재료학회지, vol. 42, No. 9, 2004.
|
17 |
K. Y. Cheong, N. Muti, S. R. Ramanan, 'Electrical and optical studies of ZnO:Ga thin films fabricated via the sol-gel technique', Thin Solid Films, vol. 410, pp.142-146, 2002.
DOI
ScienceOn
|