The effects of growth temperatures and V/III ratios at 1000℃ for a-plane GaN epi-layer on r-plane sapphire grown by HVPE
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Ha, Ju-Hyung
(Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University)
Park, Mi-Seon (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University) Lee, Won-Jae (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University) Choi, Young-Jun (LumiGNtech Co., Ltd.) Lee, Hae-Yong (LumiGNtech Co., Ltd.) |
1 | J.J. Jang, G.H. Yoo and O.H. Nam, "Current status of non-/semi-polar GaN based light emitting diodes", J. Photon. Sci. Technol. 1 (2011) 1. |
2 | S. Nakamura, T. Mukai and M. Senoh, "High-power GaN P-N junction blue-light-emitting diodes", Jpn. J. Appl. Phys. 30 (1991) L1998. DOI |
3 | S. Nakamura, "InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates", Mater. Sci. Eng. B 59 (1999) 370. DOI ScienceOn |
4 | S.J. Pearton, J.C. Zolper, R.J. Shul and F. Ren, "GaN: Processing, defects, and devices", J. Appl. Phys. 86 (1999) 1. DOI |
5 | S. Nakamura and G. Fasol, "The blue laser diodes", Springer, Heidelberg (1997). |
6 | T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, S.P. DenBaars, U.K. Mishra, J. Liberis, O. Kiprijanovic and A. Matulionis, "Nitride-based high electron mobility transistors with a GaN spacer", Appl. Phys. Lett. 89 (2006) 073508. DOI ScienceOn |
7 | T. Deguchi, K. Sekiguchi, A, Nakamura, T. Sota, R. Matsuo, S. Chichibu and S. Nakamura, "Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure", Jpn. J. Appl. Phys. 38 (1999) L914. DOI |
8 | S. Ghosh, P. Waltereit, O. Brandt, H.T. Grahn and K.H. Ploog, "Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy", Phys. Rev. B 65 (2002) 075202. DOI ScienceOn |
9 | J.K. Kang and Y.J. Kim, "Fabrication and characterization of tilted R-plane sapphire wafer for nonpolar aplane GaN", J. Korean Cryst. Growth Cryst. Technol., 21(5) (2011) 187. DOI ScienceOn |
10 | K. Domen, K. Horino, A. Kuramata and T. Tanahashi, "Analysis of polarization anisotropy along the c-axis in the photoluminescence of wurtzite GaN", Appl. Phys. Lett. 71 (1997) 1996. DOI ScienceOn |
11 | P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche and K.H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes", Nature 406 (2002) 865. |
12 | A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstic, V. Mandavilli, J. Yang and M.A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire", Appl. Phys. Lett. 84 (2004) 3663. DOI ScienceOn |
13 | T.S. Ko, T.C. Wang, R.C. Gao, H.G. Chen, G.S. Huang, T.C. Lu, H.C. Kuo and S.C. Wang, "Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition", J. Cryst Growth 300 (2007) 308. DOI ScienceOn |
14 | Y.H. Wu, C.H. Lee, C.M. Chu, Y.H. Yeh, C.L. Chen and W.I. Lee "A simple growth method to produce aplane GaN thick films by hydride vapor phase epitaxy", Jpn. J. Appl. Phys. 52 (2013) 08JB08. DOI |
15 | H.M. Wang, C.Q. Chen, Z. Gong, J.P. Zhang and M. Gaevski, "Anisotropic structural characteristics of (110) GaN templates and coalesced epitaxial lateral overgrown films deposited on (102) sapphire", Appl. Phys. Lett. 84 (2004) 499. DOI ScienceOn |
16 | K. Kusakabe and K. Ohkawa, "Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy", Jpn. J. Appl. Phys. 44(11) (2005) 7931. DOI |
17 | J.-H. Ha, M.-S. Park, W.-J. Lee, Y.-J. Choi and H.-Y. Lee, "Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE", J. Korean Cryst. Growth Cryst. Technol. 24(3) (2014) 89. DOI ScienceOn |
18 | Stephan Schwaiger, Frank Lipski, Thomas Wunderer and Ferdinand Scholz, "Influence of slight misorientations of r-plane sapphire substrates on the growth of nonpolar a-plane GaN layers via HVPE", Phys. Status Solidi C 7(7-8) (2010) 2069. DOI ScienceOn |
19 | T. Paskova, R. Kroeger, S. Figge, D. Hommel, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tutor, "High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire", Appl. Phys. Lett. 89 (2006) 051914. DOI ScienceOn |
20 | T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmitta and B. Monemar, "Nonpolar a-plane HVPE GaN growth and in-plane anisotropic properties", J. Cryst. Growth 281 (2005) 55. DOI ScienceOn |
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