• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.351-355
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• 1999

BN films with a high content of cubic phase has been deposited by a variety of techniques. It is well known that c-BN films grow with a unique microstructure consisting of $sp^2$ and $sp^{3-}$ bonded layers. Because of existence of the initially grown $sp^{2-}$ /bonded layer, BN films are not adhesive to the substrates. In this study, post-N$^{+ }$ / implantation was applied to improve the adhesion of the films. A Monte Carlo program TAMIX was used to simulate this modification process. The simulation showed nitrogen concentration profile at $1200\AA$ in depth in case of 50keV -implantation energy. FTIR spectra of the $N^{+}$ implanted specimens demonstrated a strong change of absorption band at 1380 cm$^{ -1 }$The films were also investigated by HRTEM. From these results, it is concluded that the post ion implantation could be an effective technique which improves the adhesion between BN film and substrate.

• Korean Journal of Plant Resources
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• v.28 no.6
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• pp.675-681
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• 2015

β amyloid protein (Aβ) plays a critical role in the pathogenesis of Alzheimer's disease (AD) and possibly in Aβ-induced mitochondrial dysfunction and oxidative stress. Aβ can directly cause reactive oxygen species (ROS) production. Overproduction of ROS is considered to be involved in the pathogenesis of neurodegeneration of AD. Here, we investigated 9 kinds of ramie (Boehmeria nivea, (L.) Gaud., BN; hereafter denoted as BN) for their protective action against oxidative stress in a cellular system using C6 glial cells. We observed loss of cell viability and high levels of ROS generation after treatment with hydrogen peroxide (H₂O₂) and Aβ_25-35. However, treatments with BN extracts led to an increase in cell viability and decrease in ROS production induced by H2O2 and Aβ25-35. In particular, the extracts of BN-01 (seobang variety from Seocheon) and BN-09 (local variety from Yeonggwang) showed excellent anti-oxidative properties. This indicates that BN extracts could prevent neurodegeneration by reducing oxidative stress in cells.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.158-158
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• 1999

The post ion implantation has been applied to modify early-grown BN layer and improve the adhesion of the BN films. The effect of ion implantation doses on microstructure and interlayer was investigated by FTIR and HRTEM. And the hardness and delamination life time of N+-implanted BN films were measured. With increasing the ion dose up to 5.0×1015atoms/㎠, the change of IR spectrum is observed. At 5.0×1016atoms/㎠, a drastic transition of cubic phase into hexagonal phase is detected. The change of microstructure of early-grown layers by ion implantation is confirmed using HRTEM. Both microhardness and delamination life time of BN films increase with ion dose. The modification model of early-grown BN layers is briefly discussed based on the displacement per atom and excess boron in the BN film induced by ion irradiation.

• Journal of Microbiology
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• v.45 no.6
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• pp.553-557
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• 2007

In order to detect and identify the most toxic Bacillus thuringiensis strains against pests, we isolated a B. thuringiensis strain (Bn1) from Balaninus nucum (Coleoptera: Curculionidae), the most damaging hazelnut pest. Bn1 was characterized via morphological, biochemical, and molecular techniques. The isolate was serotyped, and the results showed that Bn1 was the B. thuringiensis serovar, kurstaki (H3abc). The scanning electron microscopy indicated that Bn1 has crystals with cubic and bipyramidal shapes. The Polymerase Chain Reactions (PCRs) revealed the presence of the cry1 and cry2 genes. The presence of Cry1 and Cry2 proteins in the Bn1 isolate was confirmed via SDS-PAGE, at approximately 130 kDa and 65 kDa, respectively. The bioassays conducted to determine the insecticidal activity of the Bn1 isolate were conducted with four distinct insects, using spore-crystal mixtures. We noted that Bn1 has higher toxicity as compared with the standard B. thuringiensis subsp. kurstaki (HD-1). The highest observed mortality was 90% against Malacosoma neustria and Lymantria dispar larvae. Our results show that the B. thuringiensis isolate (Bn1) may prove valuable as a significant microbial control agent against lepidopteran pests.

• Journal of the Korean institute of surface engineering
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• v.19 no.3
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• pp.83-91
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• 1986

Codeposited of boron nitride(BN) particle dispersed into electroless nickel-phosphours (Ni-P) and nickel-boron(Ni-B) platings were studied for the purpose of developing the wear resistance and lubricity. BN can be codeposited from electroless nickel plating bath with $NaH_2PO_2$ and $NaBH_4$ as the reducing agents. Most dispersolids were distributed uniformly in the Ni-P and Ni-B matrix. Abrasion loss decreased with increasing amount of codeposits and reached a constant value 2.4 percent by volume percent of BN particle. The wear resistance and the friction coefficient of the heat treated BN composite coatings were improved about three times than that of as-coatings. The BN composite coatings were more wear resistance than hard chromium. Ni-B-BN composite coatings showed lower wear resistance and friction coefficient than Ni-P-BN. The BN content of the deposite was found to be 2.4 v/o for these optium conditions.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.48-56
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• 2004

Ceramics are very difficult-to-cut materials because of its high strength and hardness. Their machining mechanism is characterized by cracking and brittle fracture. In this paper, to give good machinability to the ceramics, h-BN powders are added to $Si_3N_4$, by volume of 20, 25 and 30%. And the machinability of the produced ceramics is tested using micro drilling system. Through required experimental works, it is shown that the micro drilling machinability is varied along with the volumetric percentage of h-BN powders. Also, it is verified that the obtained results can be used to develop new machinable ceramics of good material properties and machinability.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2011.07a
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• pp.475-478
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• 2011

율-왜곡 최적화 기법을 통한 화면내 예측 모드 결정 방법은 부호화 효율이 높지만 복잡도가 크다. 본 논문에서는 H.264/AVC의 율-왜곡 값의 특성을 분석하여 율-왜곡 최적화 기법에 사용되는 예측 모드의 후보를 줄임으로써 보다 빠른 휘도 화면내 $4{\times}4$ 예측 모드 결정 방법을 제안한다. 제안된 방법은 균일한 차분 블록값을 가지는 예측 모드와 균일하지 않은 차분 블록값을 가지는 예측 모드의 통계적 분석을 통해 부호화 속도를 향상시킨다. H.264/AVC의 참조 소프트웨어 JM 14.2와 비교하여 0.04[dB]라는 무시할 수 있는 PSNR의 손실을 가지면서도 0.3[%]의 비트율 절약과 19.6[%]의 부호화 속도 향상을 가져왔다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.04a
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• pp.187-191
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• 2000

High temperature creep behaviour of Al-5 wt% Mg alloy reinforced with 7.5% BN flakes was studied. The composite specimens showed two main creep characteristics : (1) the value of the apparent stress exponent of the composite was high and varied with applied stress (2) the apparent activation energy for creep was much larger than that for self-diffusion in aluminum The true stress exponent of the composite was set equal to 5. Temperature dependence of the threshold stress of the composite was very strong. Which could not be rationalized by allowing for the temperature dependence of the elastic modulus change. AIN particles which were incorporated into the Al matrix during fabrication of the composite by the PRIMEXTM method were found to be effective barriers to dislocation motion and to give rise the threshold stress during creep of the composite

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.6-6
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• 2003

Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (˙5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathode luminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n- type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.