• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.123.2-123
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• 2003

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2020.10a
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• pp.226-226
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• 2020

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1020-1025
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• 1998

Irradiation-induced changes in mechanical properties and magnetic parameters were measured and compared to explore possible correlations for Mn-Mo-Ni low alloy steel surveillance specimens which were irradiated to a neutron fluence of $2.3\times10^{19}n/cm^2$(E>1.0MeV) in a typical pressurized water reactor environment at about $288^{\circ}C$. For mechanical property parameters, microvickers hardness, tensile and Charpy impact test were performed and Barkhausen noise amplitude, coercivity, remanence, maximum induction were measured for magnetic parameters. respectively. Results of mechanical property measurements showed an increase in yield and tensile strength, microvickers hardness. 41J indexed $RT_{NDT}$ and a decrease in upper shelf energy irrespective of base and weld metals. However, in the case of tensile properties, the changes in weld metal were negligible compared to the base metal. In the case of magnetic measurements, it is found that magnetic remanence, BN amplitude. BN energy have dropped significantly but coercivity(H,) has increased rapidly after irradiation. In this study. the measurements conducted on surveillance specimens of Mn-Mo-Ni low alloy steel showed that there were strong correlations between mechanical properties and magnetic properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.60-60
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• 2015

Nanosheets of graphene and related 2D materials have attracted much attention due to excellent physical, chemical and mechanical properties. Single-layer graphene (SLG) was first synthesized by Blakely et al in 1974 [1]. Following his achievements, we initiated the growth and characterization of graphene and h-BN on metal substrates using surface segregation and precipitation in 1980s [2,3]. There are three important steps for nanosheet growth; surface segregation of dopants, surface reaction for monolayer phase, and subsequent 3-D growth (surface precipitation). Surface phase transition was clearly demonstrated on C-doped Ni(111) by in situ XPS at elevated temperatures [4]. The growth mode was clarified by inelastic background analysis [5]. The surface segregation approach has been applied to C-doped Pt(111) and Pd(111), and controllable growth of SLG has been demonstrated successfully [6]. Recently we proposed a promising method for producing SLG fully covering an entire substrate using Ni films deposited on graphite substrates [7]. A universal method for layer counting has been proposed [8]. In this paper, we will focus on the effect of competitive surface-site occupation between carbon and other surface-active impurities on the graphene growth. It is known that S is a typical impurity of metals and the most surface-active element. The surface sites shall be occupied by S through surface segregation. In the case of Ni(110), it is confirmed by AES and STM that the available surface sites is nearly occupied by S with a centered $2{\times}2$ arrangement. When Ni(110) is doped with C, surface segregation of C may be interfered by surface active elements like S. In this case, nanoscopic characterization has discovered a preferred directional growth of SLG, exhibiting a square-like shape (Fig. 1). Also the detailed characterization methodologies for graphene and h-BN nanosheets, including AFM, STM, KPFM, AES, HIM and XPS shall be discussed.

• Composites Research
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• v.32 no.6
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• pp.319-326
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• 2019

To address tremendous needs for developing efficiently heat dissipating material with lightweights, a new class of polymer possessing recyclable and malleable characteristics was synthesized for incorporating model functional hexagonal boron nitride (h-BN) filler. A good interfacial affinity between the polymer matrix and the filler along with shear force generated upon manufacturing the composite yielded the final product bearing highly aligned filler via simple hot pressing method. For this reason, the composite exhibited a high thermal conductivity of 13.8 W/mK. Moreover, it was possible to recover the h-BN from the composite without physical/chemical denaturation of the filler by chemically depolymerizing the matrix, thus the recovered filler can be re-used in the future. We believe this polymer could be beneficial as matrix for incorporating many other functional fillers, thus they may find applications in various polymeric composite related fields.

• Composites Research
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• v.34 no.1
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• pp.63-69
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• 2021

In order to develop an integrated heat dissipating material and gas barrier film for electronics, new polymer was designed and synthesized for preparing composites containing hexagonal boron nitride (hBN) filler. Depending on the size and content of the hBN filler, both thermal conductivity and oxygen transmission rate can be adjusted. The composite achieved a high thermal conductivity of 28.0 W·m-1·K-1 at most and the oxygen transmission rate was decreased by 62% compared to that of the filler free matrix. Effective filler aspect ratios could be estimated by comparing thermal conductivity and oxygen transmission rate with values predicted by theoretical models. Discrepancy on the aspect ratios extracted from thermal conductivity and oxygen transmission rate comparisons was also discussed.

• Korean Journal of Agricultural Science
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• v.49 no.4
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• pp.995-1001
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• 2022

The purpose of this study was to compare the effect of solid-state fermentation on soybean using three microbial strains under four different fermentation times. Soybean was fermented for 12, 24, 36 or 48 hours with highly proteolytic microbes, either Bacillus amyloliquefaciens (BA), B. subtilis (BS), or B. subtilis var. natto (BN), and levels of total protein concentration, protein distribution, and antioxidant activity were analyzed. Total protein was highest in the BS 12 h group (9.21 ㎍·µL^-1) and lowest in BN 48 h (6.80 ㎍·µL^-1), respectively (p < 0.001). Furthermore, three microbes decomposed large molecular weight proteins as well as major allergens of soybean such as β-conglycinin, Gly m Bd 30K, and glycinin. Each treatment group showed the highest degradation rate at 48 h fermentation and among the three microbes, BS showed a relatively higher degradation rate. The radical scavenging ability, known as an indicator of antioxidant activity, showed a significant increase in all treatment groups except BA 24 h. The results from this study suggest that protein concentration, and degradation and antioxidant activity were affected by different types of microbial trains and fermentation period and that B. subtilis fermentation might be the most effective way to increase nutritional and functional properties of soybean.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Electrical & Electronic Materials
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• v.16 no.1
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• pp.60.1-60
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• 2003

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.