• Title/Summary/Keyword: hBN

Search Result 192, Processing Time 0.032 seconds

Thermal Characteristics of Silicone Composites for the Application to Heat-Controllable Components (발열제어부품소재 적용을 위한 실리콘 복합조성물의 열전도 특성)

  • Kwak, Ho-Du;Oh, Weontae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.32 no.2
    • /
    • pp.116-121
    • /
    • 2019
  • Hexagonal boron nitride particles (s-hBN) modified with 3-aminopropyl triethoxysilane (APTES) were used for the preparation of silicone composite materials. The microstructure of the composite materials was observed, and the thermal conduction and mechanical characteristics of the composite sheets were studied based on the compositions and microstructures. When a small amount of s-hBN particles was used, the thermal conductivity of the composite improved as a whole, and the tensile strength of the sheet also increased. The thermal conductivity and tensile strength of the composite in which a small amount of carbon fiber was added along with s-hBN were further improved. However, the use of carbon nanotubes with structural characteristics similar to those of carbon fiber resulted in lower thermal conductivity and tensile strength. Elastic silicone composites exhibiting 2.5 W/mK of thermal conductivity and a low hardness are expected to be used as thermally conductive interfacial sheet materials.

High-performance WSe2 field-effect transistors fabricated by hot pick-up transfer technique (핫픽업 전사기술을 이용한 고성능 WSe2 기반 전계효과 트랜지스터의 제작)

  • Kim, Hyun Ho
    • Journal of Adhesion and Interface
    • /
    • v.21 no.3
    • /
    • pp.107-112
    • /
    • 2020
  • Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe2 one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe2 was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe2-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×106, and 192 mV/decade of subthreshold swing.

Synthesis of Boron Nitride Nanotubes via inductively Coupled thermal Plasma process Catalyzed by Solid-state ammonium Chloride

  • Chang, Mi Se;Nam, Young Gyun;Yang, Sangsun;Kim, Kyung Tae;Yu, Ji Hun;Kim, Yong-Jin;Jeong, Jae Won
    • Journal of Powder Materials
    • /
    • v.25 no.2
    • /
    • pp.120-125
    • /
    • 2018
  • Boron nitride nanotubes (BNNTs) are receiving great attention because of their unusual material properties, such as high thermal conductivity, mechanical strength, and electrical resistance. However, high-throughput and high-efficiency synthesis of BNNTs has been hindered due to the high boiling point of boron (${\sim}4000^{\circ}C$) and weak interaction between boron and nitrogen. Although, hydrogen-catalyzed plasma synthesis has shown potential for scalable synthesis of BNNTs, the direct use of $H_2$ gas as a precursor material is not strongly recommended, as it is extremely flammable. In the present study, BNNTs have been synthesized using radio-frequency inductively coupled thermal plasma (RF-ITP) catalyzed by solid-state ammonium chloride ($NH_4Cl$), a safe catalyst materials for BNNT synthesis. Similar to BNNTs synthesized from h-BN (hexagonal boron nitride) + $H_2$, successful fabrication of BNNTs synthesized from $h-BN+NH_4Cl$ is confirmed by their sheet-like properties, FE-SEM images, and XRD analysis. In addition, improved dispersion properties in aqueous solution are found in BNNTs synthesized from $h-BN+NH_4Cl$.

Evaporation Characteristics of Aluminum by Using Surface-treated Graphite Boat (표면처리된 흑연 보트를 이용한 알루미늄의 증발 특성)

  • Jeong, J.I.;Yang, J.H.
    • Journal of the Korean institute of surface engineering
    • /
    • v.42 no.1
    • /
    • pp.1-7
    • /
    • 2009
  • Resistive heating sources are widely used to prepare thin films by vapor deposition because they are cheap, and easy to install and handle in vacuum system. Graphite is one of materials used to make the resistive heating source, but until now only limited applications have been possible as it reacts easily with evaporating materials at high temperature. In this study, evaporation characteristics of aluminum have been investigated by using graphite boat thermally treated with BN powder. The employed graphite boat has been prepared by spray-coating BN power onto the cavity surface of the boat and thermal treatment with aluminum in vacuum at the temperature of more than $1400^{\circ}C$. The voltage-current characteristics as well as resistivity changes of the graphite boat have been investigated during aluminum evaporation according to the applied voltage and time. The evaporation aspect has been picturized during flash evaporation for 40 seconds based on the characterization results. The evaporation rate of the graphite boat has been compared with that of BN boat. The graphite boat showed some different characteristics compared with BN boat, in that the evaporation occurred at the last stage of flash evaporation. The film appearance according to the applied voltage has been compared, and also the reflectance of the resulting film has been investigated according to the film thickness. It has been found that the graphite boat thermally treated with BN powder can be used for aluminum evaporation without problem.

Analysis of Cutting Parameters for $Si_3 N_4$-hBN Machinable Ceramics Using Tungsten Carbide Tool (초경공구를 사용한 $Si_3 N_4$-hBN 머시너블 세라믹 가공에서 절삭 파라미터 분석과 결정)

  • 장성민;조명우;조원승;박동삼
    • Transactions of the Korean Society of Machine Tool Engineers
    • /
    • v.12 no.6
    • /
    • pp.36-43
    • /
    • 2003
  • In machining of ceramic materials, they are very difficult-to cut materials because of there high strength and hardness. Machining of ceramics are characterized by cracking and brittle fracture. Generally, ceramics are machined using conventional method such as finding and polishing. However these processes are generally costly and have low MRR(material removal rate). This paper focuses on determining the optimal levels of process parameters for products with CNC machining center. For this purpose, the optimization of cutting parameters is performed based on experimental design method. A design and analysis of experiments is conducted to study the effects of these parameters on the surface roughness by using the S/N ratio, analysis of ANOVA and F-test. Cutting parameters, namely, cutting speed, feed and depth of cut are optimized with consideration of the surface roughness.

Toward Charge Neutralization of CVD Graphene

  • Kim, Soo Min;Kim, Ki Kang
    • Applied Science and Convergence Technology
    • /
    • v.24 no.6
    • /
    • pp.268-272
    • /
    • 2015
  • We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

Machinability Evaluation of ${Si_3}{N_4}$-hBN Machinable Ceramics Using Experimental Design Method (실험계획법에 의한 ${Si_3}{N_4}$-hBN 머시너블 세라믹스의 절삭성 평가)

  • 장성민;임대일;조명우;조원승
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2002.10a
    • /
    • pp.291-295
    • /
    • 2002
  • Ceramics are very difficult-to-cut materials because of its high strength and hardness. Their machining process can be characterized by cracking and brittle fracture. Generally, ceramics are machined using traditional method such as grinding and polishing. However, such processes are generally costly and have low material removal rate. In this paper, to develop machinable ceramics those have good machinability without losing their material properties, machinability evaluations are performed by applying the experimental design method. In this paper, to evaluate the machinability of the developed ceramics, various workpieces are machined on the CNC machining center, and surface roughness are measured under predefined process parameters obtained using Taguchi method. And the experimental results are investigated to derive optimum cutting parameters for the given materials.

  • PDF

A Study on the Optimal Machining of the IED Ultra-precision Lapping by Taguchi Method (다구찌 방법에 의한 IED 초정밀 래핑의 최적 가공에 관한 연구)

  • Hwang, Sung-Chul;Kim, Baek-Kyoum;Won, Jong-Koo;Lee, Eun-Sang
    • Transactions of the Korean Society of Machine Tool Engineers
    • /
    • v.17 no.4
    • /
    • pp.29-34
    • /
    • 2008
  • Application of ceramic has increased due to excellent mechanical properties, and machining of ceramic has demanded gradually a precision surface machining. For decreasing the surface roughness, the control of IED lapping parameters is very important. This paper deal with the analysis of the process parameters such as applied forces, percentage of h-BN and IED lapping time, developed based on Taguchi method. Also, SEM was used for monitoring of a machinable ceramic surface.