• 한국해양공학회지
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• 제14권4호
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• pp.73-78
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• 2000

Presented are the estimation of the probability distribution of fatigue crack growth life and reliability assessment of structures by simulating material resistance to fatigue crack growth along a crack path. The material resistance is treated as a Weibull stochastic process. A non-Gaussian stochastic fields simulation method proposed by shimozuka, et al is applied with the statistical data obtained experimentally. Test results are obtained for $\delta K$ constant amplitude load in tension with stress ratio of R=0.2 and three specimen thicknesses of 6,12 and 18mm. This simulation method is useful to estimate the probability distribution of fatigue crack growth life and the smallest life.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 추계학술대회 논문집
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• pp.90-94
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• 2002

In this paper, Compression in the case where dissimilar blocks are twinned variously are carried out in the condition of lubricated interface. The degree of growth is experimentally investigated. Moreover, numerical simulations are carried out by the elastic-plastic FEM for the case of the dissimilar blocks with the initial sawtooth angle of 60。. The dissimilar blocks are twinned, larger difference between material properties leads smaller growth, and the degreased interface leads smaller growth than that in the lubricated one. Furthermore, by the simulation of compression where dissimilar blocks are twinned, it is confirmed that the tendency of the general deformation pattern is very similar to the experiment.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.70-71
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• 2006

Growth behavior and kinetics of grains in a liquid matrix has been studied by computer simulation for various physical and processing conditions. The kinetics of growing and dissolving grains were considered to follow those of single crystals in a matrix. Depending on the shape of crystals, rounded or faceted, different kinetic equations were adopted for growing grains and an identical equation for dissolving grains. Effects of such critical parameters as step free energy, temperature, and liquid volume fraction were evaluated.

• 한국군사과학기술학회지
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• 제23권2호
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• pp.168-175
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• 2020

Failure of essential avionic equipments have a significant impact on the operations and safety of P-3 maritime patrol aircraft. Therefore, avionic equipments of P-3 are required to have higher reliability. Based on the field failure data, this paper studies the reliability growth of essential avionic equipments in P-3 using Duane model. Additionally, a simulation model is built and implemented for identifying the operational availability according to the field failure data of avionic equipments.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2004년도 춘계 학술대회지
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• pp.100-101
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• 2004

[ $\bigcirc$ ] In the growth simulation using genetic coefficients calculated with fooled data under various condition, WAGT was not higher and LAI, WLVG, WSO were higher, but WST was similar before grain-filling stage after the became lower because of higher translocation of carbohydrates than in the growth simulation using genetic coefficients calculated with data under high nitrogen applicated condition. $\bigcirc$ Genetic coefficients should be calculated with data showing potential in ORYZA2000, but under 180 kg and 240 kg N condition in 2003, plants were infected by panicle blast and also yield was not higher than under 120 kg N condition showing not potential condition and therefore not appropriate for genetic coefficients estimation compared with pooled data from various condition.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2004년도 춘계 학술대회지
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• pp.104-105
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• 2004

[ $\bigcirc$ ] In the phenology model of ORYZA2000, the effect of photoperiod on the developmental rate was a little ignored because most crop parameters were measured with IRRI varieties which are insensitive to photoperiod, therefore it is very difficult to apply this phenology model directly to Korean varieties which are usually sensitive to photoperiod. $\bigcirc$ After introducing PPFAC and PPSE to improve the phenology model, the precision of heading date prediction was improved but not satisfied. $\bigcirc$ In the growth simulation using data from several regions, yield tended to be overestimated under high nitrogen applicated condition. $\bigcirc$ The precision of yield was much improved by introducing nitrogen use efficiency, but still different between regions because of different soil fertility or property of irrigation water between regions

• The Plant Pathology Journal
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• 제15권4호
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• pp.210-216
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• 1999

TREGRO, a computer simulation model of individual tree growth, was applied to estimate ozone ($\textrm{O}_3$) effects on aspen(Populus tremuloides) growth under ambient and 1.7 times ambient $\textrm{O}_3$ of Seoul in 1996. The three highest $\textrm{O}_3$ (Kuui-dong, Ssangmun-dong, Sungsoo-dong) and the two lowest $\textrm{O}_3$ sites (Mapo-dong, Namgajwa-dong) were evaluated. The current ambient $\textrm{O}_3$ did not affect aspen growth compared to simulation without $\textrm{O}_3$. The only effect was 6.6 percent of total assimilated carbonloss at Ssangmun-dong where the level of $\textrm{O}_3$ was greatest among the 21 sites examined. Decrease as much as 50 percent of total carbon gain was calculated at 1.7 times ambient $\textrm{O}_3$ of the three highest sites. The carbon loss by $\textrm{O}_3$ came from biomass of tissues and total nonstructural cabron (TNC) such as starch and sugar. The most sensitive fraction was TNC and the next was root biomass. Foliage mass was not affected by $\textrm{O}_3$. Structural biomass loss was at best 1 to 3 percent at 1.7 times ambient $\textrm{O}_3$ at the two lowest sites. The daily carbon simulation was affected by $\textrm{O}_3$ mainly during Growth Period 4 (Jul. 21-Oct. 26). Correlations between site, dose, and the simulated responses of aspen (tissue biomass, TNC, respiration, and senescence) ranged from -0.703 to -0.973 depending on the plant responses. The ozone effects on poplar in Seoul are not severe currently, but are probably measurable at Ssangmun-dong. However, severe $\textrm{O}_3$ effects on biomass would occur if $\textrm{O}_3$ levels increase to 1.7 times ambient $\textrm{O}_3$ in Seoul. In addition, v could weaken the trees thus increasing susceptibility to pathogens or insects.

• 한국진공학회지
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• 제15권4호
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• pp.410-420
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• 2006

Epitaxial 성장에서 screening 및 steering 효과 등과 같은 증착과정 중 나타나는 dynamic effects를 kinetic Monte Carlo 시뮬레이션으로 고찰하였다. 증착원자와 토대 원자와의 상호 작용을 엄밀하게 고려하기 위해 이 시뮬레이션 프로그램에 molecular dynamics 시뮬레이션을 결합시켰다. 기울어진 각도로 증착 시킬 경우 표면의 형상은 1) 증착 각도가 기울어짐에 따라 거칠기가 증가한다는 것, 2) 비대칭적인 언덕의 형성된다는 것, 그리고 3) 언덕의 면방향에 따라 비대칭적인 기울기를 갖는다는 세가지 특징을 보았다. 증착 각도나 온도 의존성에 대한 시뮬레이션 결과는 기존의 실험 결과와 잘 일치하는 것을 확인하였다. 기울어진 각도로 증착했을 때 나타나는 이러한 결과는 steering과 screening 효과에 따른 초기 증착 밀도의 불균일에 기인함을 알 수 있었고, 여기서 steering 효과가 screening 효과 보다 주요한 역할을 하는 것을 보았다. 시뮬레이션 계산에서 확인된 새로운 결과는 기울기 선택 (slope selection)이 이루어졌어도 언덕의 각 면이 단일한 기울기로 형성되어 있지 않고 여러 종류의 facet가 섞인 형태이며, 따라서 기울기 선택이 바로 facet 선택을 의미하지는 않는다는 것이다.

• 한국결정성장학회지
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• 제8권3호
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• pp.388-395
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• 1998

본 연구에서는 기상화학 증착법으로 성장되는 GaN 후막에 대한 열역학적 전사모사를 수행하고 이를 실험결과와 비교, 검토하였다. 열역학적계산은 화학양론적 연산방식을 이용하여 수치 해석하였으며, 모사의 변수로써 온도범위는 400~1500K, 기상비율은 $(GaCl_3)/[GaCl_3+NH_3],(N_2)/(GaCl_3+NH_3)$를 취하였다. GaN의 성장온도 범위는 이론적인 계산이 실험결과보다 훨씬 낮은 450~750K으로 예측되었다. 성장온도에서 모사결과와 실험결과와의 차이는 GaN의 기상 에픽텍시 성장이 박막성장의 높은 활성화 에너지 때문에 반응속도론적으로 국한된 영역 내에서 발생한다는 것을 나타낸다.

• Current Photovoltaic Research
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• 제8권1호
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.