• Journal of the Korean Crystal Growth and Crystal Technology
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• 제8권4호
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• pp.651-654
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• 1998

The layered basic zinc p-toluenesulfonates has been directly synthesized by the surface modification. The chemical formula of layered basic zinc p-toluenesulfonate is determined by CHNS and TG-DTA. From the X-ray diffraction data and the guest size, the orientation of the p-toluenesulfonate onto the zinc hydroxide layer is determined. The molecular plane of the p-toluenesulfonate lies perpendicular to the zinc hydroxide layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제8권1호
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• pp.36-41
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• 1998

Intercalation compounds of alkyl sulfonates into layered double hydroxides (LDH) have been directly synthesized. From the X-ray diffraction data and the alkyl sulfonates size, the orientation of the intercalated alkyl sulfonate into the layered double hydroxide was determined. The intercalated alkyl sulfonate is arranged with molecular chain perpendicular to the hydroxide layer with an antiparallel pattern.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제10권2호
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• pp.140-144
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• 2000

($Pb_{0.91}$$La_{0.09}$)($Zr_{0.65}$$Ti_{0.35}$)$O_3$ thin films were prepared on ITO-coated glass by spin-coating. As $Pb_{0.9}$$La_{0.1}$)$TiO_3$ thin films were used as seeding layers, formation temperature of perovskite was reduced and theUrosette" structure was disappeared. PLZT thin films with a seeding layer of 40 nm thick showed a (100) preferred orientation and better dielectric and ferroelectric properties.ties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제7권1호
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• pp.137-142
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• 1997

We synthesized the intercalation compound between a layered double hydroxide and an ethyl orange. The orientation of the intercalated ethyl orange into the layered double hydroxide was investigated. The molecular plane of the ethyl orange and its N＝N axis lie nearly perpendicular to the hydroxide layers with an antiparallel pattern.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.162-163
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• 2013

Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 한국소성가공학회 2003년도 춘계학술대회논문집
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• pp.120-126
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• 2003

Finite element analysis model is suggested for analysis of milli-forming process, which forms milli-size products. Since the size of workpiece in a milli-forming process ranges from a few hundred micrometers to a few millimeters, microstructural changes such as the growth of micro-voids and the development of preferred orientation in a grain become crucial factors for the success of milli-forming. This analysis model incorporates anisotropy from deformation torture and deterioration of mechanical properties due to the growth of micro-voids. Applications of the proposed modeling to milli-forming are given and the results are carefully examined to understand the deformation characteristics such as texture development and damage evolution during extrusion/drawing of a milli-bar.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 한국소성가공학회 2001년도 춘계학술대회 논문집
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• pp.245-249
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• 2001

This paper is concerned with numerical analyses for bulk forming of a single crystal milli-product, whose typical size ranges from a few hundreds ${\mu}m$ to a few mm. The numerical formulation invoked in this paper combines the crystal plasticity theory considering texture development and the ductile damage mechanics for growth of micro voids, since orientation development and growth of micro voids become the primary factors for bulk forming of milli-size products. As applications, milli-extrusion of a single crystal round bar and milli-rolling of a single crystal plate are simulated and the results are discussed in detail.

• Journal of the Korea Institute of Military Science and Technology
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• 제4권2호
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• pp.42-51
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• 2001

The effects of pre-indentation technique are presented for A12024-T3 Alclad alloy using as skin material for aircraft fuselage and wing. Indentations were applied to specimens to be placed on the presumed path of fatigue crack growth before fatigue tests. Tension-tension fatigue tests were conducted on the edge cracked specimens in the L-T orientation. Test results were analyzed to investigate the effectiveness of pre-indentation with the variation of specimen's thickness, position of indentation and applied maximum stress. Fatigue crack retardation by pre-indentation is well recognized in the various conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제23권5호
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• pp.224-229
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• 2013

Vanadium oxide thin films were deposited on $c-Al_2O_3$ (001) substrate by in-situ RF magnetron sputtering. Oxygen partial pressure was adjusted to prepare thermochromic $VO_2$ phase. X-ray diffraction patterns and scanning electron microscopy convincingly showed that plate-like $V_2O_5$ grains were changed into round-shape $VO_2$ grains as oxygen partial pressure decreased. After the optimized deposition conditions were fixed, the effect of substrate temperature and orientation on the optical properties of $VO_2$ thin films was analyzed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제5권4호
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• pp.343-350
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• 1995

A Abstract Systematic studies of the effects of crystalline forms of starting powders and p processing variables on the texture of hot - pressed silicon carbide are described. The results I indicate that hot - pressing of $\beta$ - SiC can produce strong textures and composite type duplex microstructure due to the ${\beta} {\rightarrow} {\alpha}$ phase transformation of SiC. The texture variations d during post - annealing have been observed. In the case of using a - SiC as starting pow¬d ders, the degree of preferred orientation by hot - pressing is relatively weak.