Effects of seeding layers on electrical properties of PLZT thin films prepared by sol-gel method

Seeding층이 sol-gel법에 의한 PLZT 박막의 제조시 전기적 특성에 미치는 영향

($Pb_{0.91}$$La_{0.09}$)($Zr_{0.65}$$Ti_{0.35}$)$O_3$ thin films were prepared on ITO-coated glass by spin-coating. As $Pb_{0.9}$$La_{0.1}$)$TiO_3$ thin films were used as seeding layers, formation temperature of perovskite was reduced and theUrosette" structure was disappeared. PLZT thin films with a seeding layer of 40 nm thick showed a (100) preferred orientation and better dielectric and ferroelectric properties.ties.