• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.160-164
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• 2007

Carbon nanofibers were deposited on silicon oxide substrate by thermal chemical vapor deposition method. For the enhancement of the characteristics of carbon nanofibers, the source gases ($C_2H_2,\;H_2$) flows were intentionally manipulated as the cyclic on/off modulation of $C_2H_2$ flow. By the cyclic modulation process during the initial deposition stage, the formation density of carbon nanofibers on the substrate could be much more enhanced. The diameter of as-grown carbon nanofibers was also reduced by the cyclic modulation process. The cause for the variation in the characteristics of carbon nanofibers by the cyclic modulation process was discussed in association with the hydrogen gas etching ability.

• Animal cells and systems
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• v.1 no.2
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• pp.389-394
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• 1997

We examined the effect of modulation of PKA isozymes on the growth of human ovarian cancer cells. Three ovarian cancer cell lines, 2774, SK-OV-3, and OVCAR-3, were examined in this study. The treatment of 5 uM 8-CI-cAMP, which has been known to down-regulate RI (or type 1 PKA) and up-regulate RII (or type II PKA), markedly inhibited the growth of all cell lines (50-80% at day 6). To test whether alteration in PKA regulatory subunits level can change the growth characteristics of ovarian cancer cells, we introduced RIIB- expression construct and Rla antisense-expression construct into 2774 cells. The overexpression of RIIB down-regulated Rla protein, and the antisense-expression of Rla up-regulated RIIB protein, showing that the intracellular levels of RI and RII are reciprocally regulated. In both cases, cell growth was reduced by 30% at day 2. These results indicate that the growth of ovarian cancer cells is controlled by the signals from PKA isozymes, and the modulation of PKA isozymes can be employed for the human ovarian cancer therapy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.119-123
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• 2011

Carbon nanotilaments (CNFs) could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and$H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ as a cyclic modulation manner, the geometries of carbon coils-related materials, such as nano-sized coil and wave-like nano-sized coil could be observed on the substrate. The characteristics (formation density and morphology) of as-grown CNFs with or without $SF_6$ incorporation were investigated. Diameter size reduction for the individual CNFs-related shape and the enhancement of the formation density of CNFs-related material could be achieved by the incorporation of $SF_6$ as a cyclic modulation manner. The cause for these results was discussed in association with the slightly increased etching ability by $SF_6$ addition and the sulfur role in SF 6 for the geometry change.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.213-217
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• 2012

Carbon coils could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and $H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ additive in cyclic modulation manner, the dominant formation of the nanosized carbon coils could be achieved with maintaining the minimized sulfur additive amount. The geometry variation of the as-grown carbon coils, such as linear type, microsized coil type, wavelike nanosized coil type, and nanosized coil type, were investigated according to the different cyclic modulation manner of $SF_6$ flow. $SF_6$ gas incorporation develops the coil-type geometry. Furthermore, the higher flow rate of $SF_6$ gas increased the amount of the nanosized carbon coils. The slightly increased etching ability by $SF_6$ addition seems to be the cause for these results.

• Ocean Systems Engineering
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• v.2 no.3
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• pp.189-203
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• 2012

New experiments focusing on the evolution characteristics of nonlinear wave trains were conducted in a large wave flume. A series of wave trains with added sidebands, varying initial steepness, perturbed amplitudes and frequencies, were physically generated in a long wave flume. The experimental results show that the increasing wave steepness, increases the speed of sidebands growth. To study the frequency and phase modulation, the Morlet wavelet transform is adopted to extract the instantaneous frequency of wave trains and the phase functions of each wave component. From the instantaneous frequency, there are local frequency downshifts, even an effective frequency downshift was not observed. The frequency modulation increases with an increase in amplitude modulation, and abrupt changes of instantaneous frequencies occur at the peak modulation. The wrapped phase functions show that in the early stage of the modulation, the phase of the upper sideband first diverges from that of the carrier waves. However, at the later stage, the discrepancy phase from the carrier wave transformed to the lower sideband. The phase deviations appear in the front of the envelope's peaks. Furthermore, the evolution of the instantaneous frequency exhibits an approximate recurrence-type for the experiment with large imposed sidebands, even when the corresponding recurrence is not observed in the Fourier spectrum.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.245-253
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• 2009

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.

• Journal of Microbiology and Biotechnology
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• v.6 no.1
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• pp.43-49
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• 1996

Modulation of the catabolic PEP-pathway of Anaerobiospirillum succiniciproducens was tried using some enzymatic inhibitors such as gases and chemicals in order to enhance succinic acid production. 10$\%$ CO increased the succinic acid/acetic acid (S/A) ratio but inhibited growth as well as production of succinic and acetic acid. Hydrogen gas also increased the S/A ratio and inhibited the synthesis of pyruvate: ferredoxin oxidoreductase when used in mixture with $CO_2$, Catabolic repression by acetic, lactic and formic acid was not recognized and other modulators such as glyoxylate, pyruvate derivatives, arsenic salt, phosphate and sulfate were shown not to be effective. Magesium carbonate was shown effective for repressing acetate production. Palmitic acid, myristic acid and phenylalanine did not affect acetate production but carprylic acid completely inhibited growth.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.142-148
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• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• Journal of the Korean Chemical Society
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• v.65 no.1
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• pp.58-61
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• 2021

• Applied Science and Convergence Technology
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• v.24 no.1
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• pp.22-26
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• 2015

The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from $400^{\circ}C$ to $490^{\circ}C$ have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ~10 meV for the sample grown at $425^{\circ}C$ compared to that for $400^{\circ}C$-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at $460^{\circ}C$ and $490^{\circ}C$ exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.